Michael A Mcneilly

US Patent:

40474968, Sep 13, 1977

Filed:

Aug 25, 1975

Appl. No.:

5/607133

Inventors:

Michael A. McNeilly - Saratoga CA
Walter C. Benzing - Saratoga CA

Assignee:

Applied Materials, Inc. - Palo Alto CA

International Classification:

C23C 1308

US Classification:

118 491

Abstract:

Apparatus and process for vapor depositing epitaxial films on substrates. A gaseous reactant is introduced into a reaction chamber formed from a material, such as quartz, which is transparent and non-obstructive to radiant heat energy transmitted at a predetermined short wave length. A graphite susceptor, which is opaque to and absorbs the radiant heat energy, is positioned within the reaction chamber and supports the substrates to be coated. The susceptor is heated while the walls of the reaction chamber remain cool to preclude deposition of epitaxial film on the walls. To insure uniform heating of the susceptor, the same may be moved relative to the radiant heat source which, in the preferred embodiment, comprises a bank of tungsten filament quartz-iodine high intensity lamps which transmit radiant heat energy against the susceptor as a non-focused generally uniform energy field.

US Patent:

40813134, Mar 28, 1978

Filed:

Nov 5, 1976

Appl. No.:

5/739293

Inventors:

Michael A. McNeilly - Saratoga CA
Walter C. Benzing - Saratoga CA
Richard M. Locke - Palo Alto CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2120
H01L 21324

US Classification:

156610

Abstract:

Process and apparatus for heating substrates to form semiconductor regions. A gaseous reactant is introduced into a reaction chamber formed from a material, such as quartz, which is transparent and non-obstructive to radiant heat energy transmitted at a predetermined short wave length. A graphite susceptor, which is opaque to and absorbs the radiant heat energy, is positioned within the reaction chamber and supports the substrates to be processed. The susceptor and substrates are heated directly while the walls of the reaction chamber remain cool. The substrates are heated uniformly, and single crystal semiconductor wafers processed by this technique have little or no crystallographic slip. To further insure uniform heating, the susceptor may be moved relative to the radiant heat source which, in the preferred embodiment, comprises a bank of tungsten filament quartz-iodine high intensity lamps.

US Patent:

50443143, Sep 3, 1991

Filed:

Oct 14, 1988

Appl. No.:

7/257855

Inventors:

Michael A. McNeilly - Palo Alto CA

Assignee:

Advantage Production Technology, Inc. - Sunnyvale CA

International Classification:

C23C 1600

US Classification:

118715

Abstract:

A semiconductor wafer processing apparatus has a processing housing including a pair of coaxial hollow cylindrical members each defining an inner cylindrical chamber for directing a treatment medium toward a wafer and an annular chamber for withdrawing the treatment medium. A wafer support which can include a heater holds one or two wafers substantially normal to the axis of the processing housing. The treatment medium is introduced in vapor phase at very low to high velocity and at subatmospheric to superatmospheric pressure. Radiation can be introduced into the housing, and wafers can be automatically moved into and out of the housing and from the housing to another treating apparatus.

US Patent:

49388150, Jul 3, 1990

Filed:

Oct 14, 1988

Appl. No.:

7/257854

Inventors:

Michael M. McNeilly - Palo Alto CA

Assignee:

Advantage Production Technology, Inc. - Sunnyvale CA

International Classification:

C30B 2302
C30B 2510

US Classification:

156612

Abstract:

A semiconductor substrate heater process and apparatus are disclosed for uniformly heating semiconductor substrates. A device for supporting the back side of an IC wafer in a reaction chamber and for conduction heating therein and auxiliary heat directed to the front side of the substrate by reflection from the inside surface of the reaction chamber and/or by an auxiliary heating source within the reaction chamber are disclosed.

US Patent:

49560468, Sep 11, 1990

Filed:

Sep 29, 1988

Appl. No.:

7/251108

Inventors:

Michael A. McNeilly - Palo Alto CA

Assignee:

Advantage Production Technology, Inc. - Sunnyvale CA

International Classification:

C30B 2302
C30B 2510
F24H 100

US Classification:

156613

Abstract:

A reaction system and process for uniformly heating semiconductor substrates and a device for supporting the same and direct conductive heating of IC wafers within a reactor are described. The substrate is held in direct contact with the heating source positioned within the reactor. The heat source is a thermal delivery module made of material such as solid silicon carbide, or high temperature material containing resistive heating elements. The heat is uniformly transferred to the walls of the module by a molten metal having a low melting point and high boiling point such as essentially indium or bismuth or a eutectic of indium and bismuth.

US Patent:

57627550, Jun 9, 1998

Filed:

Dec 21, 1992

Appl. No.:

7/994604

Inventors:

Michael A. McNeilly - Palo Alto CA
John M. deLarios - Palo Alto CA
Glenn L. Nobinger - Santa Clara CA
Wilbur C. Krusell - San Jose CA
Dah-Bin Kao - Palo Alto CA
Ralph K. Manriquez - Saratoga CA
Chiko Fan - Danville CA

Assignee:

Genus, Inc. - Sunnyvale CA

International Classification:

H01L 21302

US Classification:

1566521

Abstract:

A method for achieving greater uniformity and control in vapor phase etching of silicon, silicon oxide layers and related materials associated with wafers used for semiconductor devices comprises the steps of first cleaning the wafer surface to remove organics, followed by vapor phase etching. An integrated apparatus for cleaning organic and, subsequently, vapor phase etching, is also described. In embodiments of the invention cooling steps are incorporated to increase throughput, an on-demand vaporizer is provided to repeatably supply vapor at other than azeotropic concentration, and a residue-free etch process is provided.

US Patent:

47785594, Oct 18, 1988

Filed:

Oct 15, 1986

Appl. No.:

6/919313

Inventors:

Michael A. McNeilly - Palo Alto CA

Assignee:

Advantage Production Technology - Albuquerque NM

International Classification:

C30B 2302
C30B 2510
F24H 100
H05B 360

US Classification:

156612

Abstract:

A reaction system and process for uniformly heating semiconductor substrates and a device for supporting the same and direct conductive heating of IC wafers within a reactor are described. The substrate is held in direct contact with the heating source positioned within the reactor. The heat source is a thermal delivery module made of material such as solid silicon carbide, or high temperature material containing resistive heating elements. The heat is uniformly transferred to the walls of the module by a molten metal having a low melting point and high boiling point such as essentially indium or bismuth or a eutectic of indium and bismuth.

US Patent:

48913359, Jan 2, 1990

Filed:

Sep 29, 1988

Appl. No.:

7/251115

Inventors:

Michael A. McNeilly - Palo Alto CA

Assignee:

Advantage Production Technology Inc. - Sunnyvale CA

International Classification:

H01L 2100
H01L 2102
C30B 104
C30B 2302

US Classification:

437247

Abstract:

A reaction system and process for uniformly heating semiconductor substrates and a device for supporting the same and direct conductive heating of IC wafers within a reactor are described. The substrate is held in direct contact with the heating source positioned within the reactor. The heat source is a thermal delivery module made of material such as solid silicon carbide, or high temperature material containing resistive heating elements. The heat is uniformly transferred to the walls of the module by a molten metal having a low melting point and high boiling point such as essentially indium or bismuth or a eutectic or indium and bismuth.