Michael T Phenis

US Patent:

7632796, Dec 15, 2009

Filed:

Oct 28, 2005

Appl. No.:

11/260912

Inventors:

Michael T. Phenis - Markleville IN, US
Lauri Kirby Kirkpatrick - Pittsboro IN, US
Raymond Chan - Carmel IN, US
Diane Marie Scheele - Greenwood IN, US
Kimberly Dona Pollard - Anderson IN, US
Gene Goebel - Danville CA, US

Assignee:

Dynaloy, LLC - Indianapolis IN

International Classification:

C11D 7/50

US Classification:

510175, 510407

Abstract:

Improved stripper solutions for removing photoresists from substrates are provided that typically have freezing points below about +15 C. and high loading capacities. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent, the amino and hydroxyl substituents attached to two different carbon atoms. Some formulation can additionally contain a secondary solvent. Methods for use of the stripping solutions are additionally provided.

US Patent:

7655608, Feb 2, 2010

Filed:

Oct 30, 2007

Appl. No.:

11/928754

Inventors:

Kimberly Dona Pollard - Anderson IN, US
Michael T. Phenis - Markleville IN, US

Assignee:

Dynaloy, LLC - Indianapolis IN

International Classification:

C11D 3/30
C11D 3/04
C11D 1/62

US Classification:

510176, 510175, 510178, 510254, 510259, 510261, 510264, 134 12, 134 13

Abstract:

Resist stripping agents, useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with reduced metal etch rates, particularly copper etch rates, are provided with methods for their use. The preferred stripping agents contain low concentrations of a copper or cobalt salt with or without an added amine to improve solubility of the copper or cobalt salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

US Patent:

7851427, Dec 14, 2010

Filed:

Feb 1, 2010

Appl. No.:

12/697470

Inventors:

Kimberly Dona Pollard - Anderson IN, US
Michael T. Phenis - Markleville IN, US

Assignee:

Dynaloy, LLC - Indianapolis IN

International Classification:

C11D 3/30
C11D 3/04
C11D 1/62

US Classification:

510176, 510175, 510178, 510254, 510259, 510261, 510264, 134 12, 134 13

Abstract:

Resist stripping agents, useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with reduced metal etch rates, particularly copper etch rates, are provided with methods for their use. The preferred stripping agents contain low concentrations of a copper salt with or without an added amine to improve solubility of the salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

US Patent:

8263539, Sep 11, 2012

Filed:

Oct 23, 2006

Appl. No.:

11/551826

Inventors:

Michael T. Phenis - Markleville IN, US
Diane Marie Scheele - Greenwood IN, US
Kimberly Dona Pollard - Anderson IN, US

Assignee:

Dynaloy, LLC - Kingsport TN

International Classification:

C11D 7/32

US Classification:

510176, 216 83

Abstract:

Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, an optional secondary solvent and less than about 3 wt. % water and/or a dryness coefficient of at least about 1. Methods for the preparation and use of the improved dry stripping solutions are additionally provided.

US Patent:

8440389, May 14, 2013

Filed:

Jun 24, 2009

Appl. No.:

12/490654

Inventors:

Kimberly Dona Pollard - Anderson IN, US
John M. Atkinson - Zionsville IN, US
Raymond Chan - Westborough MA, US
Michael T. Phenis - Markleville IN, US
Allison C. Rector - Indianapolis IN, US
Donald Pfettscher - Brownsburg IN, US

Assignee:

Dynaloy, LLC - Kingsport TN

International Classification:

G03F 7/30
G03F 7/32
C11D 7/32

US Classification:

430329, 430331, 510175, 510176

Abstract:

Back end of line (BEOL) stripping solutions which can be used in a stripping process that replaces etching resist ashing process are provided. The stripping solutions are useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with good efficiency and with low and acceptable metal etch rates. Methods for their use are similarly provided. The preferred stripping agents contain a polar aprotic solvent, water, an amine and a quaternary hydroxide that is not tetramethylammonium hydroxide. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.

US Patent:

20040077773, Apr 22, 2004

Filed:

Jul 11, 2003

Appl. No.:

10/617987

Inventors:

Manuel Tavares - Chester Township NJ, US
Michael Phenis - Markleville IN, US
Paul Hough - Indianapolis IN, US

International Classification:

C08K003/00

US Classification:

524/507000

Abstract:

Novel liquid curable gelling material are disclosed and based on the reaction between a polyol-capped isocyanate and an adduct of an anhydride and a polyol. The liquid gelling material forms a gel characterized by both urethane and ester linkages. In a specific embodiment, the two part curable liquid potting composition comprises in part A, a hydroxyl capped polyisocyanate, and less than 1000 ppm of free isocyanate, and in part B, an anhydride adduct of polybutadiene comprising a polybutadiene segment. The preferred polybutadiene segment has a molecular weight of from 500 and 20,000. In a second embodiment, the 2-part curable liquid potting composition comprises in part A: a polybutaidene polyol capped polyisocyanate containing less than 1000 ppm of free isocyanate, and in part B an anhydride adduct of a polyol having a molecular weight of from 500 and 20,000.

US Patent:

20070243773, Oct 18, 2007

Filed:

Apr 5, 2007

Appl. No.:

11/697047

Inventors:

Michael Phenis - Markleville IN, US
Raymond Chan - Carmel IN, US
Kimberly Pollard - Anderson IN, US

International Classification:

H01B 13/00
H01R 13/46

US Classification:

439892000, 216016000

Abstract:

Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, an optional secondary solvent and less than about 3 wt. % water and/or a dryness coefficient of at least about 1. Methods for the preparation and use of the improved dry stripping solutions are additionally provided. Advantageous solution methods are provided for the use of the novel stripper solutions to prepare an electronic interconnect structure by removing a plurality of resist layers to expose an underlying dielectric and related substrate without imparting damage to any of the underlying structure.

US Patent:

20090186793, Jul 23, 2009

Filed:

Oct 24, 2006

Appl. No.:

12/091808

Inventors:

Michael T. Phenis - Markleville IN, US
Lauri Renee Johnson - Greenfield IN, US
Raymond Chan - Westborough MA, US
Diane Marie Scheele - Greenwood IN, US
Kimberly Dona Pollard - Anderson IN, US
Gene Goebel - Danville CA, US

International Classification:

C11D 7/32

US Classification:

510176, 564296

Abstract:

Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, an optional secondary solvent and less than about 3 wt. % water and/or a dryness coefficient of at least about 1. Methods for the preparation and use of the improved dry stripping solutions are additionally provided.