Michael J Pickering

US Patent:

6464912, Oct 15, 2002

Filed:

Jan 6, 1999

Appl. No.:

09/226534

Inventors:

Jitendra Singh Goela - Andover MA
Zlatko Salihbegovic - New Iberia LA
Michael A. Pickering - Dracut MA
Mitch Boudreaux - New Iberia LA

Assignee:

CVD, Incorporated - Woburn MA

International Classification:

B29C 4102

US Classification:

264 81, 264313

Abstract:

Near net shape free standing articles can be produced by chemical vapor deposition techniques when a suitable substrate is suspended in a chemical vapor deposition zone according to the disclosed technique. By suspending such substrates from linear suspension supports such as ropes, cables and wires, multiple near net shape articles can be produced with substantial manufacturing cost savings over previously employed techniques.

US Patent:

6648977, Nov 18, 2003

Filed:

Jul 17, 2001

Appl. No.:

09/907374

Inventors:

Jitendra Singh Goela - Andover MA
Zlatko Salihbegovic - New Iberia LA
Michael A. Pickering - Dracut MA
Mitch Boudreaux - New Iberia LA

Assignee:

Shipley Company, L.L.C. - Marlborough MA

International Classification:

H01L 2100

US Classification:

118728, 118715, 118500, 4272481

Abstract:

Near net shape free standing articles can be produced by chemical vapor deposition techniques when a suitable substrate is suspended in a chemical vapor deposition zone according to the disclosed technique. By suspending such substrates from linear suspension supports such as ropes, cables and wires, multiple near net shape articles can be produced with substantial manufacturing cost savings over previously employed techniques.

US Patent:

6872637, Mar 29, 2005

Filed:

Jul 16, 2003

Appl. No.:

10/620883

Inventors:

Michael A. Pickering - Dracut MA, US
Jitendra S. Goela - Andover MA, US

Assignee:

Shipley Company, L.L.C. - Marlborough MA

International Classification:

H01L029/00

US Classification:

438483, 438381, 438478

Abstract:

An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.

US Patent:

6939821, Sep 6, 2005

Filed:

Jun 6, 2002

Appl. No.:

10/164238

Inventors:

Jitendra S. Goela - Andover MA, US
Michael A. Pickering - Dracut MA, US

Assignee:

Shipley Company, L.L.C. - Marlborough MA

International Classification:

C04B035/569

US Classification:

501 88, 501 92

Abstract:

An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties of the silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.

US Patent:

7018947, Mar 28, 2006

Filed:

Feb 21, 2001

Appl. No.:

09/790442

Inventors:

Jitendra S. Goela - Andover MA, US
Michael A. Pickering - Dracut MA, US

Assignee:

Shipley Company, L.L.C. - Marlborough MA

International Classification:

C04B 35/569
H01B 1/04

US Classification:

501 88, 501 92, 252516

Abstract:

Free standing articles of chemical vapor deposited silicon carbide with electrical resistivities of less than 0. 9 ohm-cm are provided without substantially degrading its thermal conductivity or other properties.

US Patent:

7589025, Sep 15, 2009

Filed:

Dec 1, 2006

Appl. No.:

11/607632

Inventors:

Jitendra S. Goela - Andover MA, US
Nathaniel E. Brese - Farmingdale NY, US
Michael A. Pickering - Dracut MA, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

H01L 21/4763

US Classification:

438708, 438712, 257E23008, 257E23006, 257E23111

Abstract:

Methods are disclosed for providing reduced particle generating silicon carbide. The silicon carbide articles may be used as component parts in apparatus used to process semiconductor wafers. The reduced particle generation during semiconductor processing reduces contamination on semiconductor wafers thus increasing their yield.

US Patent:

7722441, May 25, 2010

Filed:

Oct 6, 2006

Appl. No.:

11/544223

Inventors:

Jitendra S. Goela - Andover MA, US
Michael A. Pickering - Dracut MA, US
James T. Fahey - Mendon MA, US
Melinda S. Strickland - Hillsboro OR, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

B24B 1/00

US Classification:

451 63, 4288481

Abstract:

Semiconductor processing and equipment are disclosed. The semiconductor equipment and processing provide semiconductor wafers with reduced defects.

US Patent:

7927915, Apr 19, 2011

Filed:

Jun 21, 2004

Appl. No.:

10/872746

Inventors:

Jitendra S. Goela - Andover MA, US
Michael A. Pickering - Dracut MA, US

Assignee:

Rohm and Haas Company - Philadelphia PA

International Classification:

H01L 21/00

US Classification:

438105

Abstract:

An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties of the silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.