Michael R Power

US Patent:

6660874, Dec 9, 2003

Filed:

Apr 6, 2002

Appl. No.:

10/118382

Inventors:

Deodatta V. Shenai-Khatkhate - Danvers MA
Michael B. Power - Newburyport MA
Artashes Amamchyan - Wakefield MA

Assignee:

Shipley Company, L.L.C. - Marlborough MA

International Classification:

C07F 900

US Classification:

556 70, 4272481, 427588, 428 11, 257 49

Abstract:

Disclosed are methods of preparing trialkyl Group VA metal compounds in high yield and high purity. Such trialkyl Group VA metal compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities.

US Patent:

6770769, Aug 3, 2004

Filed:

Apr 5, 2003

Appl. No.:

10/407993

Inventors:

Deodatta Vinayak Shenai-Khatkhate - Danvers MA
Michael Brendan Power - Newburyport MA

Assignee:

Shipley Company, L.L.C. - Marlborough MA

International Classification:

C07F 500

US Classification:

556 1

Abstract:

Trialkylindium compounds are prepared by reacting indium trihalide with a trialkylaluminum compound in the presence of a fluoride salt, wherein the molar ratio of the indium trihalide to the fluoride salt is at least 1:4. 5. Such trialkylindium compounds are particularly suitable for use in metalorganic vapor phase epitaxy.

US Patent:

6939983, Sep 6, 2005

Filed:

May 7, 2004

Appl. No.:

10/841127

Inventors:

Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Artashes Amamchyan - Wakefield MA, US
Michael Brendan Power - Newburyport MA, US
James Edward Felton - Hudson NH, US

Assignee:

Rohm and Haas Electronic Materials, LLC - Marlborugh MA

International Classification:

C07F009/02
C07F009/90
C07F009/94

US Classification:

556 70, 568 8, 568 16

Abstract:

A method of preparing Group VA organometal compounds in high yield and high purity by the reaction of a Grignard reagent with a Group VA metal halide in certain ethereal solvents is provided. A method of preparing Group VA organometal hydrides is also provided.

US Patent:

6956127, Oct 18, 2005

Filed:

Jan 17, 2003

Appl. No.:

10/346275

Inventors:

Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Michael Brendan Power - Newburyport MA, US
Artashes Amamchyan - Wakefield MA, US

Assignee:

Shipley Company, L.L.C. - Marlborough MA

International Classification:

C07F009/72
C07F009/02
C07F009/90
C23C016/00
H01L021/44

US Classification:

556 70, 568 8, 568 16, 427587, 427593, 438604, 438606, 438681

Abstract:

Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RMX, where R is an alkyl, Mis a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.

US Patent:

7413776, Aug 19, 2008

Filed:

Apr 2, 2004

Appl. No.:

10/817618

Inventors:

Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Michael Brendan Power - Newburyport MA, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

C23C 16/18

US Classification:

42725528, 42725535, 42725539

Abstract:

A method of depositing a Group IV metal-containing film on a substrate by conveying one or more of certain Group IV organometallic compounds in a gaseous phase to a deposition reactor containing a substrate and decomposing the one or more Group IV organometallic compounds to form a film of a Group IV metal on the substrate is provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.

US Patent:

7767840, Aug 3, 2010

Filed:

Aug 12, 2008

Appl. No.:

12/228346

Inventors:

Deodatta Vinayak Shenai-Khatkhate - Danvers MA, US
Michael Brendan Power - Newburyport MA, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

C07F 7/30

US Classification:

556 87, 556 81, 556 95, 556104

Abstract:

Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.

US Patent:

20030199704, Oct 23, 2003

Filed:

Nov 23, 2002

Appl. No.:

10/303434

Inventors:

Deodatta Shenai-Khatkhate - Danvers MA, US
Michael Power - Newburyport MA, US
Artashes Amamchyan - Wakefield MA, US

Assignee:

Shipley Company, L.L.C. - Marlborough MA

International Classification:

C07F009/94
C07F009/90
C07F009/70
C07F009/02
C07F001/02

US Classification:

556/070000, 568/016000, 260/66500R

Abstract:

Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RMXwhere R is an alkyl, Mis a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities.

US Patent:

20060226075, Oct 12, 2006

Filed:

Apr 12, 2006

Appl. No.:

11/402566

Inventors:

Deodatta Shenai-Khatkhate - Danvers MA, US
Michael Power - Newburyport MA, US

Assignee:

Rohm and Haas Electronic Materials LLC - Marlborough MA

International Classification:

B01D 11/04

US Classification:

210634000, 210774000, 210806000, 023299000, 203039000, 423001000, 423098000, 423112000

Abstract:

A process of purifying metal-containing compounds employing continuous extraction is provided. The metal-containing compounds are provided in high purity and are suitable for use in depositing metal films, particularly thin metal films used in electronic devices.