Michael S Ray

US Patent:

6455931, Sep 24, 2002

Filed:

May 15, 2001

Appl. No.:

09/859618

Inventors:

Michael Ray - Goleta CA
Eli E. Gordon - Goleta CA
Christopher L. Fletcher - Santa Barbara CA
Ronald W. Berry - Goleta CA

Assignee:

Raytheon Company - Lexington MA

International Classification:

H01L 2334

US Classification:

257723, 250332

Abstract:

A monolithic microelectronic array structure includes a microelectronic integrated circuit array having a first plurality of microelectronic integrated circuit elements each deposited on a front side of a substrate. The substrates are physically discontinuous so that each substrate comprises a substrate island which is physically separated from the other substrate islands. The monolithic microelectronic array structure optionally includes a first plurality of input/output elements with a respective input/output element associated with and directly connected to each of the microelectronic integrated circuit elements, and a second plurality of electrically conductive interconnects extending between the microelectronic integrated circuit elements of adjacent substrate islands. The monolithic microelectronic array structure may be planar, or it may be curved.

US Patent:

6649913, Nov 18, 2003

Filed:

Feb 26, 2002

Appl. No.:

10/084687

Inventors:

Adam M. Kennedy - Santa Barbara CA
Michael Ray - Goleta CA
Richard H. Wyles - Santa Barbara CA
Jessica K. Wyles - Santa Barbara CA
William A. Radford - Santa Barbara CA

Assignee:

Raytheon Company - Lexington MA

International Classification:

G01J 500

US Classification:

250352, 250353

Abstract:

A focal plane array (FPA) of infrared (IR) radiation detectors ( ), such as an array of microbolometers, includes an active area ( A) containing a plurality of IR radiation detectors, a readout integrated circuit (ROIC) ( ) that is mechanically and electrically coupled to the active area and, disposed on the ROIC, a plurality of heater elements ( A) that are located and operated so as to provide a substantially uniform thermal distribution across at least the active area. The FPA further includes a plurality of temperature sensors ( B), individual ones of which are spatially associated with one of the heater elements for sensing the temperature in the vicinity of the associated heater element for providing closed loop operation of the associated heater element. In one embodiment pairs of the heater elements and associated temperature sensors are distributed in a substantially uniform manner across at least a top or a bottom surface of the ROIC, while in another embodiment pairs of the heater elements and associated temperature sensors, or only the heater elements, are distributed in accordance with a predetermined thermal profile of the FPA. The plurality of heater elements may each be composed of a silicon resistance, and the plurality of temperature sensors may each be each composed of a silicon temperature sensor.

US Patent:

6667479, Dec 23, 2003

Filed:

Jun 1, 2001

Appl. No.:

09/872436

Inventors:

Michael Ray - Goleta CA

Assignee:

Raytheon Company - Lexington MA

International Classification:

G01J 500

US Classification:

2503381, 250332

Abstract:

A microbolometer unit cell ( ) includes a substantially planar upper-level incident radiation absorption and detection structure ( ), a substantially planar middle-level radiation reflection structure ( ) spaced apart from the upper-level incident radiation absorption and detection structure for defining an optical resonant cavity ( ) there between, and a substantially planar lower-level thermal isolation leg structure ( ) spaced apart from the middle-level radiation reflection structure and electrically coupled to the upper-level incident radiation absorption and detection structure and to an underlying readout circuit. The lower-level thermal isolation leg structure is electrically coupled to the upper-level incident radiation absorption and detection structure through a leg ( ) that passes through an aperture ( ) within the middle-level radiation reflection structure, the leg also functioning as a structural support member. The lower-level thermal isolation leg structure is electrically coupled to the readout circuit through another leg ( ) that terminates on an electrical contact ( ) disposed on an underlying readout integrated circuit ( ), and the middle-level radiation reflection structure is supported by an extension of the leg ( A).

US Patent:

7629582, Dec 8, 2009

Filed:

Oct 24, 2006

Appl. No.:

11/586323

Inventors:

Alan W. Hoffman - Goleta CA, US
Michael Ray - Goleta CA, US
Richard E. Bornfreund - Camarillo CA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

G01J 5/02

US Classification:

25033901, 2503381, 25033903, 257 21, 257440

Abstract:

A dual band imager includes a radiation absorbing layer for absorbing light of a first wavelength coupled to a readout circuit (ROIC), and at least one radiation detector for detecting light of a second wavelength coupled to the ROIC via a corresponding opening extending through the radiation absorbing layer.

US Patent:

20090109582, Apr 30, 2009

Filed:

Oct 30, 2007

Appl. No.:

11/980150

Inventors:

Michael D. Jack - Goleta CA, US
Michael Ray - Goleta CA, US
Robert E. Kvaas - Goleta CA, US
Gina M. Crawford - Goleta CA, US

International Classification:

H02H 9/00
G01T 1/24
H01L 27/00
H01L 21/44

US Classification:

361 56, 25037001, 257529, 257530, 438600, 438601, 257E27001

Abstract:

In one exemplary embodiment, a detector of electromagnetic radiation includes: a substrate; at least one layer of semiconductor material formed on the substrate, said at least one layer of semiconductor material defining a radiation absorbing and detecting region; an electrical contact configured to couple said region to a readout circuit; and a fuse coupled between the region and the electrical contact. In another exemplary embodiment, a fusible link between a first component and a second component is provided and includes: a fuse with an undercut located underneath at least a portion of the fuse; a first contact coupling the first component to the fuse; and a second contact coupling the second component to the fuse, wherein the undercut is disposed between the first contact and the second contact. In another exemplary embodiment, a fusible link includes a fuse having a layer of material having a negative temperature coefficient of resistance.

US Patent:

50411888, Aug 20, 1991

Filed:

Jun 12, 1990

Appl. No.:

7/537200

Inventors:

James M. Myrosznyk - Santa Barbara CA
Jerry A. Wilson - Goleta CA
Michael Ray - Goleta CA

Assignee:

Santa Barbara Research Center - Goleta CA

International Classification:

B44C 122
C23F 102
C03C 1500
B29C 3700

US Classification:

156634

Abstract:

A high temperature superconductor (HTS) fabrication process employs a two level metal deposition sequence for depositing a layer of metal (14, 18) over HTS material (12) to protect the HTS material from subsequent, possibly deleterious, processing steps. The process of the invention provides a capability for both patterning a HTS film material and electrically contacting the film using conventional photolithographic processes. The process of the invention furthermore accomplishes these objectives without degrading the superconducting properties of the film. The two level metal process protects the film from aqueous based processes such as photoresist development. The two level metal process furthermore does not require processes such as aqueous based chemical etching or ion milling of the surfaces of the superconducting film, thereby eliminating at least two processes which are known to degrade the superconducting properties of HTS material.

US Patent:

57010080, Dec 23, 1997

Filed:

Nov 29, 1996

Appl. No.:

8/758408

Inventors:

Michael Ray - Goleta CA
Adam M. Kennedy - Santa Barbara CA

Assignee:

HE Holdings, Inc. - Los Angeles CA

International Classification:

G01J 508
G01J 506

US Classification:

250352

Abstract:

An infrared (IR) microlens array has a plurality of microlenses (12) aligned with respective IR detector array pixels (6) to focus incoming IR radiation onto the pixels (6) to improve the efficiency of IR detection, and a gas molecule getter grating (14) inside a vacuum-sealed Dewar assembly that houses the detector array (4) increases the surface area of the getter (15) to improve the efficiency of removing residual gas molecules from the Dewar assembly.

US Patent:

63296551, Dec 11, 2001

Filed:

Oct 7, 1999

Appl. No.:

9/414989

Inventors:

Michael D. Jack - Goleta CA
Michael Ray - Goleta CA
John Varesi - Santa Barbara CA
Jan Grinberg - Los Angeles CA
Harold Fetterman - Pacific Palisades CA
Franklin A. Dolezal - Reseda CA

Assignee:

Raytheon Company - Lexington MA

International Classification:

G01J 500
G01J 520

US Classification:

2503381

Abstract:

A radiation sensor. The inventive sensor has a two-level detector structure formed on a substrate in which a thermal detector element is suspended over the substrate as a microbridge structure. A receiver of electromagnetic radiation is provided on the same side of the substrate in a manner that efficiently couples the radiation field to the thermal detector element. The thermal detector element has a sandwich structure including a heater metal layer, a dielectric layer, and a thin film thermo-resistive material. The thermal detector element is suspended out of physical contact with the receiver. In one embodiment, the receiver is an antenna having a crossed bowtie configuration that efficiently couples the radiation field to the detector element. The inventive radiation sensors are especially useful for mm-wave and microwave sensing applications. The sensor can be used individually or in linear or two-dimensional arrays thereof.