Michael G Robbins

US Patent:

7508504, Mar 24, 2009

Filed:

Aug 9, 2007

Appl. No.:

11/891657

Inventors:

Ju Jin - Austin TX, US
Satish Sadam - Round Rock TX, US
Vishal Verma - Austin TX, US
Zhiyan Huang - Austin TX, US
Siming Lin - Austin TX, US
Michael D Robbins - Round Rock TX, US
Paul F. Forderhase - Austin TX, US

Assignee:

Accretech USA, Inc. - Bloomfield Hills MI

International Classification:

G01N 21/00

US Classification:

3562374, 3562372, 3562376, 356417, 356446

Abstract:

A substrate illumination and inspection system provides for illuminating and inspecting a substrate particularly the substrate edge. The system uses a light diffuser with a plurality of lights disposed at its exterior or interior for providing uniform diffuse illumination of a substrate. An optic and imaging system exterior of the light diffuser are used to inspect the plurality of surfaces of the substrate including specular surfaces. The optic can be rotated radially relative to a center point of the substrate edge to allow for focused inspection of all surfaces of the substrate edge.

US Patent:

20050205518, Sep 22, 2005

Filed:

May 18, 2005

Appl. No.:

11/131611

Inventors:

Michael Robbins - Round Rock TX, US

International Classification:

B44C001/22
H01L021/311

US Classification:

216037000, 438694000, 216067000, 438706000

Abstract:

A method for shaping and/or encapsulating near-edge regions of a substrate wafer is described. A housing provides channels for flowing a reactive gas towards the wafer edge. The reactive gas is directed towards the wafer edge for removing or depositing a thin film on the wafer edge. Gasses are exhausted downstream from the flow of the reactive gas. A second channel in the housing directs a flow of diluent/quenching gas onto the wafer for exhausting of the diluent/quenching gas and the reactive gas away from the wafer. The method may also provide a sequence of process steps, for example, selectively etching of a material on the wafer, etching of second material on the wafer and depositing an encapsulating material layer on the wafer.

US Patent:

20070062647, Mar 22, 2007

Filed:

Sep 19, 2005

Appl. No.:

11/230263

Inventors:

Joel Bailey - Austin TX, US
Jonathan Doan - Austin TX, US
Paul Forderhase - Austin TX, US
Johnny Ortiz - Round Rock TX, US
Michael Robbins - Round Rock TX, US

International Classification:

H01L 21/306
C23F 1/00

US Classification:

156345330, 156345510, 438691000

Abstract:

An isolative substrate edge area processing method and apparatus is described. The apparatus has an isolator for isolating and processing by dry chemical technique a portion of a substrate including a substrate edge region. The isolator has nozzles for directing a flow of reactive species towards the edge area of the substrate and a purge plenum for biasing flow of reactive species towards an exhaust plenum while the substrate rotates on a chuck. Tuned flow control prevents migration of reactive species and reaction byproducts out of the processing area. A method for processing a substrate with the isolator involves directing a flow of reactive species at an angle towards an edge area of the substrate while forming a boundary around the processing area with flow control provided by the purge plenum, and exhaust plenum.

US Patent:

20070066076, Mar 22, 2007

Filed:

Sep 19, 2005

Appl. No.:

11/230261

Inventors:

Joel Bailey - Austin TX, US
Johnny Ortiz - Round Rock TX, US
Michael Robbins - Round Rock TX, US
Richard Rock - Round Rock TX, US

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438710000, 438746000

Abstract:

A substrate processing method and apparatus using a combustion flame of a gaseous mixture of hydrogen and a non-oxygen oxidizer is described. The method uses the hydrogen and non-oxygen oxidizer combustion flame to impinge upon a substrate surface for chemically reacting with a thin film on the surface and thus etching the substrate. The method is performed in a substantially inert and non-ionized environment at a substantially atmospheric pressure. An apparatus for processing a substrate with the method has a processing chamber for containing the inert environment and a nozzle head for directing the combustion flame towards a substrate retained upon a substrate holder. In an embodiment, an edge nozzle assembly is angled towards the edge of the wafer for treating the near-edge and edge of the wafer. In this embodiment, a heater preheats the substrate in the near-edge region to be processed.

US Patent:

20070258085, Nov 8, 2007

Filed:

May 2, 2006

Appl. No.:

11/417297

Inventors:

Michael Robbins - Round Rock TX, US
Paul Forderhase - Austin TX, US
Joel Bailey - Austin TX, US
Kevin Nguyen - Leander TX, US

International Classification:

G01N 21/00

US Classification:

356237400

Abstract:

A substrate illumination and inspection system provides for illuminating and inspecting a substrate particularly the substrate edge. The system uses a light diffuser with a plurality of lights disposed at its exterior or interior for providing uniform diffuse illumination of a substrate. An optic and imaging system exterior of the light diffuser are used to inspect the plurality of surfaces of the substrate including specular surfaces. The optic is held at an angle from a surface normal to avoid reflective artifacts from the specular surface of the substrate. The optic can be rotated radially relative to a center point of the substrate edge to allow for focused inspection of all surfaces of the substrate edge. The plurality of lights can modulate color and intensity of light to enhance inspection of the substrate for defects.

US Patent:

20080010845, Jan 17, 2008

Filed:

Jul 6, 2007

Appl. No.:

11/825670

Inventors:

Joel Bailey - Austin TX, US
Jean-Michel Huret - Cedar Park TX, US
Paul Forderhase - Austin TX, US
Satish Sadam - Round Rock TX, US
Scott Stratton - Pflugerville TX, US
Michael Robbins - Round Rock TX, US

Assignee:

Accretech USA, Inc. - Bloomfield Hills MI

International Classification:

G01C 25/00
G01D 21/00
G06F 17/17
H01L 21/68

US Classification:

033520000, 414757000, 702150000

Abstract:

A method and apparatus for dry chemical processing a wafer at atmospheric pressure is disclosed. The edge area of a substrate is placed in isolation from the remainder of the substrate. According to the present teachings, a method for centering a wafer on a rotatable chuck is provided. The method includes the steps of positioning a wafer adjacent to a micrometer. The wafer is then rotated and a plurality of wafer edge locations and rotational increments are measured. A center offset value for the value of the wafer center with respect to a chuck is calculated. The wafer is then moved with respect to a center position of the chuck.

US Patent:

20080011332, Jan 17, 2008

Filed:

Jul 6, 2007

Appl. No.:

11/825676

Inventors:

Joel Bailey - Austin TX, US
Jean-Michel Huret - Cedar Park TX, US
Paul Forderhase - Austin TX, US
Satish Sadam - Round Rock TX, US
Scott Stratton - Pflugerville TX, US
Michael Robbins - Round Rock TX, US

Assignee:

Accretech USA, Inc. - Bloomfield Hills MI

International Classification:

B08B 3/02

US Classification:

13405600R, 134151000

Abstract:

An edge area of the substrate processing device is disclosed. The edge area being processed is isolated from the remainder of the substrate by directing a flow of an inert gas through a plenum near the area to be processed thus forming a barrier while directing a flow of reactive species at an angle relative to the top surface of the substrate towards the substrate edge area thus processing the substrate edge area. A flow of oxygen containing gas into the processing chamber together with a negative exhaust pressure may contribute to the biasing of reactive species and other gases away from the non-processing areas of the substrate.

US Patent:

20080011421, Jan 17, 2008

Filed:

Jul 6, 2007

Appl. No.:

11/825669

Inventors:

Joel Bailey - Austin TX, US
Jean-Michel Huret - Cedar Park TX, US
Paul Forderhase - Austin TX, US
Satish Sadam - Round Rock TX, US
Scott Stratton - Pflugerville TX, US
Michael Robbins - Round Rock TX, US

Assignee:

Accretech USA, Inc. - Bloomfield Hills MI

International Classification:

C23F 1/00

US Classification:

156345100

Abstract:

An edge area of the substrate processing device is disclosed. The edge area being processed is isolated from the remainder of the substrate by directing a flow of an inert gas through a plenum near the area to be processed thus forming a barrier while directing a flow of reactive species at an angle relative to the top surface of the substrate towards the substrate edge area thus processing the substrate edge area. A flow of oxygen containing gas into the processing chamber together with a negative exhaust pressure may contribute to the biasing of reactive species and other gases away from the non-processing areas of the substrate. A seal arrangement is provided for the processing chamber.