Michael T Rodgers

US Patent:

41706676, Oct 9, 1979

Filed:

Apr 24, 1978

Appl. No.:

5/899125

Inventors:

Michael A. Rodgers - Tempe AZ

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

C01B 3300
C01B 3302

US Classification:

427 86

Abstract:

A process for the production of high purity polycrystalline silicon from a mixture of silicon tetrachloride and trichlorosilane. Such a mixture can be used for the rapid deposition of polycrystalline silicon while, at the same time, producing an excess of trichlorosilane in exhaust gases from the reaction. The process permits the modification of the reactor design for the economical and energy conscious production of polycrystalline silicon.

US Patent:

39339858, Jan 20, 1976

Filed:

Sep 24, 1971

Appl. No.:

5/183584

Inventors:

Michael A. Rodgers - Tempe AZ

Assignee:

Motorola, Inc. - Chicago IL

International Classification:

C01B 3300
C01B 3302
C01B 3308

US Classification:

423350

Abstract:

There is disclosed a process for the hydrogen reduction of silicon tetrachloride to produce trichlorosilane. In accordance with the process, hydrogen and silicon tetrachloride vapors are passed through a reaction chamber at relatively high flow rates with approximately 50 mole percent silicon tetrachloride in the mixture. The reaction vessel is held at a temperature of between 900. degree. and 1200. degree. C. This process is a part of an overall system for the production of polycrystalline silicon for the semiconductor industry.