Michael Ray Sievers

US Patent:

6730237, May 4, 2004

Filed:

Jun 22, 2001

Appl. No.:

09/887791

Inventors:

Michael R. Sievers - Holmes NY
Steven B. Herschbein - Hopewell Junction NY
Aaron D. Shore - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C23F 100

US Classification:

216 62, 216 66, 216 78, 20412934

Abstract:

A process for milling copper metal from a substrate having an exposed copper surface includes absorbing a halogen gas onto the exposed copper surface to generate reaction products of copper and the halogen gas; removing unreacted halogen gas from the surface; and directing a focused ion beam onto the surface to selectively remove a portion of the surface comprising the reaction products.

US Patent:

6843893, Jan 18, 2005

Filed:

Dec 12, 2002

Appl. No.:

10/317679

Inventors:

Steven B. Herschbein - Hopewell Junction NY, US
Herschel M. Marchman - Poughquag NY, US
Chad Rue - Poughkeepsie NY, US
Michael R. Sievers - Poughkeepsie NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C10B 100
H01L 21302

US Classification:

204224M, 15634511, 15634539, 1563454

Abstract:

A method and structure for an apparatus for removing metal from an integrated circuit structure is disclosed. A container holds an integrated circuit structure that has a metal portion. An electronic device connected to the container produces an electronic field proximate to a limited region of the metal portion. A first supply connected to the container supplies an oxidizing agent within the container. A solvent supply connected to the container supplies solvent to the limited region of the metal portion.

US Patent:

6900137, May 31, 2005

Filed:

Mar 28, 2003

Appl. No.:

10/249289

Inventors:

Steven B. Herschbein - Hopewell Junction NY, US
Ville S. Kiiskinen - Newburgh NY, US
Chad Rue - Poughkeepsie NY, US
Carmelo F. Scrudato - Ossining NY, US
Michael R. Sievers - Poughkeepsie NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01I021/302

US Classification:

438712, 438705, 438714, 438717, 438725, 438734, 216 62, 216 66

Abstract:

The present invention is directed to methods for editing copper features embedded within an organic body by exposing at least a portion of a top surface of the copper feature, forming a mill box there-over and then simultaneously milling both the copper feature and any organic material exposed through the mill box in a single step using an ion beam in combination with a XeFgas for a dwell time of at least 10 milliseconds. The invention dramatically increases the efficiency of Focused Ion Beam milling of copper features embedded in organic layers by milling these features in a gas-depleted environment at significantly increased dwell time while avoiding the problems of graphitization, destruction of the organic layer and metal redeposition.

US Patent:

7119333, Oct 10, 2006

Filed:

Nov 10, 2004

Appl. No.:

10/904438

Inventors:

Steven B. Herschbein - Hopewell Junction NY, US
Narender Rana - Albany NY, US
Chad Rue - Poughkeepsie NY, US
Michael R. Sievers - Poughkeepsie NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G01N 23/225
H01J 37/00

US Classification:

250309, 250397, 25049221

Abstract:

Detection of weak ion currents scattered from a sample by an ion beam is improved by the use of a multiplier system in which a conversion electrode converts incident ions to a number of secondary electrons multiplied by a multiplication factor, the secondary electrons being attracted to an electron detector by an appropriate bias. In one version, the detector is a two stage system, in which the secondary electrons strike a scintillator that emits photons that are detected in a photon detector such as a photomultiplier or a CCD.

US Patent:

7256399, Aug 14, 2007

Filed:

Apr 7, 2005

Appl. No.:

10/907591

Inventors:

Siddhartha Panda - Beacon NY, US
Michael R. Sievers - Poughkeepsie NY, US
Richard S. Wise - New Windsor NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G01N 23/227

US Classification:

250305, 250307, 438 5, 438 10

Abstract:

A non-destructive in-situ elemental profiling of a layer in a set of layers method and system are disclosed. In one embodiment, a first emission of a plurality of photoelectrons is caused from the layer to be elementally profiled. An elemental profile of the layer is determined based on the emission. In another embodiment, a second emission of a plurality of photoelectrons is also received from the layer, and an elemental profile is determined by comparison of the resulting signals. A process that is altering the layer can then be controlled “on-the-fly” to obtain a desired material composition. Since the method can be employed in-situ and is non-destructive, it reduces turn around time and lowers wafer consumption. The invention also records the composition of all processed wafers, hence, removing the conventional statistical sampling problem.

US Patent:

7278300, Oct 9, 2007

Filed:

Sep 29, 2005

Appl. No.:

11/162958

Inventors:

Michael R. Sievers - Poughkeepsie NY, US
Siddhartha Panda - Beacon NY, US
Richard Wise - New Windsor NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G01B 5/28

US Classification:

73105

Abstract:

An atomic force microscope (AFM) having a hollowed cantilever ending in a hollowed tip is described, wherein the end of the tip is immersed in a liquid. The AFM includes a gas source that provides and controls the flow of gas into the hollowed tip. The flow rate of the gas is regulated to form and sustain a static bubble at the end of the hollowed tip. The formation of the static bubble is verified optically. A gas control manifold allows an easy switch of gasses that are fed into the probe tip. The gas that is introduced acts like a chemically modified tip, and is selected to increase the deflection signal for the material of interest. The tip of the present invention is a highly versatile AFM tool that is easily adjusted to provide optimized imaging for a wide variety of materials, in contrast with standard AFMs that require a plethora of chemically modified tips to obtain equivalent results. Moreover, there is a much lower propensity for the tip to damage the sample or to be damaged from inadvertent contact with the surface of the sample.

US Patent:

7285775, Oct 23, 2007

Filed:

Dec 2, 2004

Appl. No.:

10/904883

Inventors:

Michael R. Sievers - Poughkeepsie NY, US
Siddhartha Panda - Beacon NY, US
Richard Wise - New Windsor NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G01N 23/227

US Classification:

250305, 250306, 250307, 378 89

Abstract:

Photoelectron emissions are used to detect an endpoint of a thickness alteration of a topmost layer in a set of layers undergoing patterning. The set of layers are irradiated, which causes an emission of photoelectrons. Upon receipt of or absence of a photoelectron emission, patterning endpoint is detected.

US Patent:

7384835, Jun 10, 2008

Filed:

May 25, 2006

Appl. No.:

11/420318

Inventors:

Huajie Chen - Danbury CT, US
Judson R Holt - Wappingers Falls NY, US
Rangarajan Jagannathan - Hopewell Junction NY, US
Wesley C Natzle - New Paltz NY, US
Michael R Sievers - Poughkeepsie NY, US
Richard S Wise - Newburgh NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/335

US Classification:

438197, 257E21435

Abstract:

Disclosed are embodiments of a MOSFET with defined halos that are bound to defined source/drain extensions and a method of forming the MOSFET. A semiconductor layer is etched to form recesses that undercut a gate dielectric layer. A low energy implant forms halos. Then, a COR pre-clean is performed and the recesses are filled by epitaxial deposition. The epi can be in-situ doped or subsequently implanted to form source/drain extensions. Alternatively, the etch is immediately followed by the COR pre-clean, which is followed by epitaxial deposition to fill the recesses. During the epitaxial deposition process, the deposited material is doped to form in-situ doped halos and, then, the dopant is switched to form in-situ doped source/drain extensions adjacent to the halos. Alternatively, after the in-situ doped halos are formed the deposition process is performed without dopants and an implant is used to form source/drain extensions.