Walt A. de Heer - Atlanta GA, US Xuebin Li - Santa Clara CA, US Michael Sprinkle - Mableton GA, US
Assignee:
Georgia Tech Research Corporation - Atlanta GA
International Classification:
C23C 14/28 H05B 6/00
US Classification:
427595, 427591
Abstract:
In a method of producing ultra-thin graphitic layers, a carbide crystal is placed into a graphitic enclosure. The carbide crystal and the graphitic enclosure are placed into a chamber. The carbide crystal and the graphitic enclosure are subjected to a predetermined environment. Once the predetermined environment is established, the carbide crystal and the graphitic enclosure are heated to a first temperature for a predetermined period of time sufficient to cause at least one non-carbon element to evaporate from a crystal face of the carbide crystal so as to form at least one graphitic layer on the crystal face of the carbide crystal.
Method And Apparatus For Producing Graphene Oxide Layers On An Insulating Substrate
In a method of making a functionalized graphitic structure, a portion of a multi-layered graphene surface extending from a silicon carbide substrate is exposed to an acidic environment so as to separate graphene layers in a portion of the multi-layered graphene surface. The portion of the multi-layered graphene surface is exposed to a functionalizing material that binds to carbon atoms in the graphene sheets so that the functionalizing material remains between the graphene sheets, thereby generating a functionalized graphitic structure. The functionalized graphitic structure is dried in an inert environment.