Michelle Andrews Leonard

US Patent:

6373077, Apr 16, 2002

Filed:

Nov 22, 2000

Appl. No.:

09/718654

Inventors:

John Adam Edmond - Cary NC
Hua-Shuang Kong - Raleigh NC
Kathleen Marie Doverspike - Cary NC
Michelle Turner Leonard - Cary NC

Assignee:

Cree, Inc. - Durham NC

International Classification:

H01L 310312

US Classification:

257 77, 438 32, 257 97, 257103

Abstract:

An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.

US Patent:

6492193, Dec 10, 2002

Filed:

Nov 22, 2000

Appl. No.:

09/718958

Inventors:

John Adam Edmond - Cary NC
Hua-Shuang Kong - Raleigh NC
Kathleen Marie Doverspike - Cary NC
Michelle Turner Leonard - Cary NC

Assignee:

Cree, Inc. - Durham NC

International Classification:

H01L 2100

US Classification:

438 77, 438 22, 438 24, 438 42, 438 46, 438 47, 257 79, 257 94, 257103

Abstract:

An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.

US Patent:

6630690, Oct 7, 2003

Filed:

Sep 28, 2001

Appl. No.:

09/966789

Inventors:

John Adam Edmond - Cary NC
Hua-Shuang Kong - Raleigh NC
Kathleen Marie Doverspike - Cary NC
Michelle Turner Leonard - Cary NC

Assignee:

Cree, Inc. - Durham NC

International Classification:

H01L 2715

US Classification:

257 79, 257 9, 257 13, 257 21, 257 82, 257 90, 257290, 257292, 438 20, 438 22, 438 48, 438 39, 438 41, 372 39, 372 40, 372 43, 372 45

Abstract:

An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.

US Patent:

62012622, Mar 13, 2001

Filed:

Oct 7, 1997

Appl. No.:

8/944547

Inventors:

John Adam Edmond - Cary NC
Hua-Shuang Kong - Raleigh NC
Kathleen Marie Doverspike - Cary NC
Michelle Turner Leonard - Cary NC

Assignee:

Cree, Inc. - Durham NC

International Classification:

H01L 310312

US Classification:

257 77

Abstract:

An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.

US Patent:

61876062, Feb 13, 2001

Filed:

Sep 20, 1999

Appl. No.:

9/399445

Inventors:

John Adam Edmond - Cary NC
Hua-Shuang Kong - Raleigh NC
Kathleen Marie Doverspike - Cary NC
Michelle Turner Leonard - Cary NC

Assignee:

Cree, Inc. - Durham NC

International Classification:

H01L 2100

US Classification:

438 46

Abstract:

An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.