Miguel Levy

US Patent:

6503321, Jan 7, 2003

Filed:

Apr 9, 1999

Appl. No.:

09/289169

Inventors:

Miguel Levy - New York NY
Antonije M. Radojevic - Mamaroneck NY

Assignee:

The Trustees of Columbia University in the City of New York - New York NY

International Classification:

C30B 2518

US Classification:

117 89, 117 94, 117 95, 117915

Abstract:

A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment the single-crystal film from the crystal structure. The thin film may be detached by subjecting the crystal structure with the ion implanted damage layer to a rapid temperature increase without chemical etching. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures. Methods for enhancing the crystal slicing etch-rate are also disclosed.

US Patent:

6540827, Apr 1, 2003

Filed:

Jul 18, 2000

Appl. No.:

09/618433

Inventors:

Miguel Levy - Houghton MI
Antonije M. Radojevic - Mamaroneck NY

Assignee:

Trustees of Columbia University in the City of New York - New York NY

International Classification:

C30B 3122

US Classification:

117 3, 117 4, 117915, 216 62, 216 87, 438407, 438458

Abstract:

A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment the single-crystal film from the crystal structure. The thin film may be detached by subjecting the crystal structure with the ion implanted damage layer to a rapid temperature increase without chemical etching. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures. Methods for enhancing the crystal slicing etch-rate are also disclosed.

US Patent:

6641662, Nov 4, 2003

Filed:

Mar 30, 2001

Appl. No.:

09/821862

Inventors:

Antonije M. Radojevic - Mamaroneck NY
Miguel Levy - Chassell MI

Assignee:

The Trustees of Columbia University in the City of New York - New York NY

International Classification:

C30B 100

US Classification:

117 2, 117 3, 117915, 438406, 438407, 438408, 216 62, 216 87, 385130

Abstract:

A method for fabricating ultra-thin single-crystal metal oxide wave retarder plates, such as a zeroth-order X-cut single-crystal LiNbO half-wave plate, comprises ion implanting a bulk birefringent metal oxide crystal at normal incidence through a planar major surface thereof to form a damage layer at a predetermined distance d below the planar major surface, and detaching a single-crystal wave retarder plate from the bulk crystal by either chemically etching away the damage layer or by subjecting the bulk crystal having the damage layer to a rapid temperature increase to effect thermally induced snap-off detachment of the wave retarder plate. The detached wave retarder plate has a predetermined thickness d dependent on the ion implantation energy. A half-wave plate fabricated in accordance with this method may be used in conjunction with an optical waveguide section to form a TE-TM polarization mode converter by mounting the half-wave plate in a groove in the wageguide section perpendicular to the direction of wave propagation therein, bonding the half-wave plate to the back-end facet of the waveguide section or bonding the half-wave plate to the front-end facet of the waveguide section. In each case the normal mode axes of the half-wave plate is at 45Â with respect to the direction of the electric field vector of the TE or TM mode of propagation in the waveguide section.

US Patent:

6952300, Oct 4, 2005

Filed:

Feb 27, 2002

Appl. No.:

10/469436

Inventors:

Miguel Levy - Chassell MI, US

Assignee:

Board of Control of Michigan Technological University - Houghton MI

International Classification:

G02F001/09
G02F001/00
G02F001/295

US Classification:

359280, 359324, 385 6

Abstract:

A magneto-optical isolator () for an optical circuit. The isolator includes a substrate, and an optical channel () disposed next to the substrate. The optical channel and substrate are configured to transmit optical radiation within the optical channel. The isolator further includes a photonic-crystal rotator () formed with the substrate and the optical channel. The rotator has at least one defect () and magnetic (M) and non-magnetic (N) materials.

US Patent:

20040183408, Sep 23, 2004

Filed:

Mar 21, 2003

Appl. No.:

10/394987

Inventors:

Miguel Levy - Chassell MI, US
Shankar Ghimire - Houghton MI, US
Kee Moon - Houghton MI, US

Assignee:

Board of Control of Michigan Technological University - Houghton MI

International Classification:

H01L041/047

US Classification:

310/365000

Abstract:

An actuator including a piezoelectric film. The film has a first side, a second side, and a thickness between the first side and the second side. The actuator also includes a first electrode adjacent to the first side of the film, and a second electrode adjacent to the second side of the film. The first electrode and the second electrode are configured to establish an electric field gradient across the thickness of the film when the first electrode and the second electrode are energized. The gradient causes deflection of the film. The gradient includes a difference between a field component substantially near the first side of the film and a field component substantially near the second side of the film.

US Patent:

20090060411, Mar 5, 2009

Filed:

Sep 5, 2007

Appl. No.:

11/850373

Inventors:

Miguel Levy - Chassell MI, US
Xiaoyue Huang - Houghton MI, US
Raghav Vanga - Houghton MI, US
Ziyou Zhou - Houghton MI, US

Assignee:

MICHIGAN TECHNOLOGICAL UNIVERSITY - Houghton MI

International Classification:

G02F 1/095
G02F 1/09

US Classification:

385 6, 359280

Abstract:

A latching magnetic structure in the resonant cavity of magneto-photonic crystal films with in-plane magnetization. Also disclosed is a method for the fabrication and observation of a latching magnetic structure.

US Patent:

61205974, Sep 19, 2000

Filed:

Feb 17, 1998

Appl. No.:

9/025114

Inventors:

Miguel Levy - New York NY
Richard M. Osgood - Chappaqua NY

Assignee:

The Trustees of Columbia University in the City of New York - New York NY

International Classification:

C30B 3122

US Classification:

117 3

Abstract:

A method is provided for detaching a single-crystal film from an epilayer/substrate or bulk crystal structure. The method includes the steps of implanting ions into the crystal structure to form a damage layer within the crystal structure at an implantation depth below a top surface of the crystal structure, and chemically etching the damage layer to effect detachment the single-crystal film from the crystal structure. The method of the present invention is especially useful for detaching single-crystal metal oxide films from metal oxide crystal structures.

US Patent:

54085659, Apr 18, 1995

Filed:

Feb 22, 1993

Appl. No.:

8/020362

Inventors:

Miguel Levy - New York NY
Richard M. Osgood - New York NY

Assignee:

The Trustees of Columbia University in the City of New York - Morningside Heights NY

International Classification:

G02B 610

US Classification:

385130

Abstract:

In a polarization rotator device, a thin-film magneto-optic medium is magnetized by a thin-film magnet. To serve as an optical isolator, the device may include polarizers. In such an optical isolator, in which the magneto-optic medium was formed as a Bi-YIG triple-layer structure, and the thin-film magnet as a single-crystal iron-cobalt layer, an extinction ratio better than -20 dB was realized.