Ming C Chen

US Patent:

6903133, Jun 7, 2005

Filed:

Oct 14, 2003

Appl. No.:

10/685870

Inventors:

Qian Shi - Chapel Hill NC, US
Masayoshi Oyama - Aichi Prefecture, JP
John Robert Vance - Chapel Hill NC, US
Ming S. Chen - Cupertino CA, US

Assignee:

Plantaceutica, Inc. - Research Triangle Park NC

International Classification:

A61K031/36
C07D407/02

US Classification:

514463, 549298

Abstract:

This invention features compounds having formula (I): wherein, R, R, R, R, R, R, R, T, X, and Y are as defined herein. This invention also features a method for treating cancer. The method includes administrating to a subject in need thereof a compound of formula (I).

US Patent:

6950355, Sep 27, 2005

Filed:

Dec 18, 2001

Appl. No.:

10/020208

Inventors:

Surya Battacharya - Irvine CA, US
Ming Chen - Mission Viejo CA, US
Liming Tsau - Irvine CA, US
Henry Chen - Irvine CA, US

Assignee:

Broadcom Corporation - Irvine CA

International Classification:

G11C007/00

US Classification:

365201, 365154

Abstract:

A method for testing a semiconductor wafer. An array of probes is coupled to the semiconductor wafer. Then a voltage difference is applied across a plurality of adjacent metal line pairs (e. g. , wordline and/or bitline pairs) of one or more SRAM arrays of at least one die. Application of the voltage difference induces failure of metal stringers or defects between the adjacent lines. Additionally, the voltage can be applied across respective pairs of substantially all parallel metal lines of the one or more SRAM arrays of more that one die of the semiconductor wafer.

US Patent:

8048886, Nov 1, 2011

Filed:

Dec 7, 2007

Appl. No.:

12/518184

Inventors:

Zhuoliang Chen - Cambridge MA, US
Run-Ming David Wang - Cambridge MA, US
Ming Chen - Cambridge MA, US
Christopher Sean Straub - Cambridge MA, US
Leigh Zawel - Cambridge MA, US

Assignee:

Novartis AG - Basel

International Classification:

A61K 31/4965

US Classification:

51425506, 544120, 544333, 544407, 548125, 548202, 548254, 548255, 548444, 548503, 548518, 549398, 585 26

Abstract:

The present invention relates to novel IAP inhibitor compounds of formula I:.

US Patent:

8058272, Nov 15, 2011

Filed:

Dec 7, 2007

Appl. No.:

12/518195

Inventors:

Zhuoliang Chen - Cambridge MA, US
Run-Ming David Wang - Cambridge MA, US
Ming Chen - Cambridge MA, US
Christopher Sean Straub - Cambridge MA, US
Leigh Zawel - Cambridge MA, US

Assignee:

Novartis AG - Basel

International Classification:

C07D 401/02
A61K 31/44

US Classification:

5142372, 514312, 514333, 514334, 514349, 544131, 544333, 546152, 546256, 546261, 5462681, 546297

Abstract:

The present disclosure relates to XIAP inhibitor compound of the formula I:.

US Patent:

8044209, Oct 25, 2011

Filed:

Oct 10, 2007

Appl. No.:

12/445435

Inventors:

Mark G. Charest - Cambridge MA, US
Christine Hiu-Tung Chen - Waltham MA, US
Ming Chen - Jupiter FL, US
Zhuoliang Chen - Belmont MA, US
Miao Dai - Dover MA, US
Feng He - Arlington MA, US
Huangshu Lei - Durham NC, US
Christopher Sean Straub - Stow MA, US
Run-Ming David Wang - Cambridge MA, US
Leigh Zawel - Hingham MA, US

Assignee:

Novartis AG - Basel

International Classification:

A61K 31/4439
C07D 405/14
C07D 401/14

US Classification:

5462791, 5462774, 5462734, 435375

Abstract:

The present invention relates to novel IAP inhibitor compounds of: Formula (I).

US Patent:

20030034489, Feb 20, 2003

Filed:

Jul 16, 2002

Appl. No.:

10/195527

Inventors:

Surya Bhattacharya - Irvine CA, US
Ming Chen - Newport Coast CA, US
Liming Tsau - Irvine CA, US
Henry Chen - Irvine CA, US
Neal Kistler - Monarch Beach CA, US
Yi Liu - Union City CA, US
Tzu-Hsin Huang - San Jose CA, US

Assignee:

Broadcom Corporation

International Classification:

H01L023/58

US Classification:

257/048000

Abstract:

A semiconductor wafer configured for in-process testing of integrated circuitry fabricated thereon. At least two die are separated by a scribe area, and each of the die has at least one complementary metal oxide silicon (CMOS) static random access memory (SRAM) array embedded therein among mixed-signal CMOS circuitry. The mixed-signal CMOS circuitry includes devices with larger feature sizes compared to similar devices of the embedded SRAM array. A first process control monitor (PCM) testline is included, which has a first layout corresponding to the mixed-signal CMOS circuitry. Additionally, a second PCM testline is included, which has a second layout corresponding to the embedded SRAM arrays. The first and second PCM testlines are formed in the scribe area.

US Patent:

20070155727, Jul 5, 2007

Filed:

Dec 22, 2006

Appl. No.:

11/644822

Inventors:

Ming Chen - Somerville MA, US
Emmanuel Claret - Besancon, FR
Arwed Cleve - Berlin, DE
David Davey - El Sobrante CA, US
William Guilford - Belmont CA, US
Thomas Kirkland - Atascadero CA, US
Monica Kochanny - Benicia CA, US
Amy Liang - Vallejo CA, US
David Light - San Mateo CA, US
John Parkinson - Martinez CA, US
David Vogel - Richmond CA, US
Guo Wei - San Ramon CA, US
Bin Ye - Moraga CA, US
Hong Ye - Richmond CA, US

Assignee:

Schering Aktiengessellschaft - Berlin

International Classification:

A61K 31/551
A61K 31/407
C07D 487/02
C07D 243/08

US Classification:

514218000, 514412000, 540575000, 548453000

Abstract:

This invention is directed to compounds of formula (I): where r, q, R, R, R, R, R, R, R, R, R, R, R, R, R, R, Rand Rare described herein, or pharmaceutically acceptable salts, solvates, polymorphs, ammonium ions, N-oxides or prodrugs thereof; which are leukotriene Ahydrolase inhibitors and which are therefore useful in treating inflammatory disorders. Pharmaceutical compositions comprising the compounds of the invention and methods of using and preparing the compounds of the invention are also disclosed.

US Patent:

20110319614, Dec 29, 2011

Filed:

Sep 8, 2011

Appl. No.:

13/228221

Inventors:

Zhuoliang CHEN - Belmont MA, US
Run-Ming David WANG - Cambridge MA, US
Ming CHEN - Jupiter FL, US
Christopher Sean STRAUB - Stow MA, US
Leigh ZAWEL - Hingham MA, US

Assignee:

NOVARTIS AG - Basel

International Classification:

C07D 241/18
C07D 401/06
C07D 403/14
C07D 401/14
C07D 413/14
C07D 239/36
C07D 413/10

US Classification:

544120, 544408, 544319, 544405, 544123, 544296, 544295

Abstract:

The present invention relates to novel IAP inhibitor compounds of formula I: