Minoru Sugawara

US Patent:

20080180696, Jul 31, 2008

Filed:

Nov 30, 2007

Appl. No.:

11/998512

Inventors:

Minoru Sugawara - Delmar NY, US

Assignee:

Sony Corporation - Tokyo
Sony Electronics Inc. - Park Ridge NJ

International Classification:

G01B 11/14

US Classification:

356624

Abstract:

A method is provided for determining a process window for a lithography process using a reflective mask. The method begins by selecting a target Critical Dimension (CD) of a feature in an image pattern to be formed on a wafer and a corresponding CD tolerance. A CD of the feature formed on the wafer is determined as a function of exposure and focus position of light used in the lithography process. A shift in position of the image pattern is determined as a function of the exposure and the focus position. For the selected target CD and the selected corresponding CD tolerance, an Exposure-Defocus-Shift of pattern position (EDS).