Mona E Zaghloul from 7121 Arrowood Rd, Bethesda, MD 20817, age 80, Phone: 3013653417

Proceedings of the 35th Midwest Symposium on Circuits and System, the Capital Hilton Washington, D.C. August 9-12, 1992/92Ch3099-9

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Author
Mona Elwakkad Zaghloul

ISBN #
0780305108

Silicon Implementation of Pulse Coded Neural Networks

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Author
Mona E. Zaghloul

ISBN #
0792394496

Professor

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Work:

The George Washington University School of Engineering
Professor

Skills:

Microsoft Office
Management
Microsoft Excel
Microsoft Word
Research
Powerpoint
Sales
Leadership
Training
Photoshop
Matlab

Us Patents

Saw Devices, Processes For Making Them, And Methods Of Use
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US Patent:

8143681, Mar 27, 2012
Filed:

Apr 20, 2007
Appl. No.:

11/738460
Inventors:

Mona Zaghloul - Bethesda MD, US
Onur Tigli - Vancouver WA, US
Anis Nurashikin Nordin - Selangor, MY
Assignee:

The George Washington University - Washington DC
International Classification:

H01L 29/84
US Classification:

257416, 257E45006, 310313 B
Abstract:

The design, fabrication, post-processing and characterization of a novel SAW (Surface Acoustic Wave) based bio/chemical sensor in CMOS technology is introduced. The sensors are designed in AMI 1. 5 μm 2 metal, 2 poly process. A unique maskless post processing sequence is designed and completed. The three post-processing steps are fully compatible with any CMOS technology. This allows any signal control/processing circuitry to be easily integrated on the same chip. ZnO is used as the piezoelectric material for the SAW generation. A thorough characterization and patterning optimization of the sputtered ZnO was carried out. The major novelties that are introduced in the SAW delay line features are: The embedded heater elements for temperature control, compensation and acoustic absorbers that are designed to eliminate edge reflections and minimize triple transit interference. Both of these attributes are designed by using the CMOS layers without disturbing the SAW performance.

Method For Making Cmos-Based Monolithic Micro Electromechanical System (Mems) Integrated Circuits And Integrated Circuits Made Thereby
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US Patent:

20030104649, Jun 5, 2003
Filed:

Aug 15, 2002
Appl. No.:

10/218902
Inventors:

Mehmet Ozgur - Reston VA, US
Mona Zaghloul - Bethesda MD, US
International Classification:

H01L021/00
H01L029/82
H01L029/00
US Classification:

438/050000, 257/415000, 257/416000, 257/417000, 257/532000, 438/053000
Abstract:

A method is provided for fabricating a CMOS based micro-electromechanical system (MEMS) integrated circuit. A CMOS circuit layout is fabricated on a silicon substrate. A first thick film photo resist layer is then deposited on the CMOS circuit layout. To prevent oxidation from occurring between aluminum and gold, a seed layer is applied to the first thick film photo resist layer. A mold is then formed by selectively depositing a second thick film photo resist layer on portions of the seed layer so that a conductive layer can be applied to the mold. Portions of the seed layer are then removed and a stress compensation material is applied to the conductive layer. A back side surface of the silicon substrate is then etched to remove areas not covered by a mask, and the first thick film photo resist layer is removed via openings in the CMOS circuit layout.

Multiplex Biosensor
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US Patent:

20090124513, May 14, 2009
Filed:

Jul 2, 2008
Appl. No.:

12/166601
Inventors:

Patricia Berg - Accokeek MD, US
Mona Zaghloul - Bethesda MD, US
Onur Tigli - Arlington VA, US
International Classification:

C40B 30/04
B01J 19/00
C40B 60/12
G01N 33/543
US Classification:

506 9, 422 681, 436518, 506 39
Abstract:

This invention relates to CMOS SAW-based biosensor devices for detecting analytes and biomolecules of interest.

Ghz Surface Acoustic Resonators In Rf-Cmos
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US Patent:

20100007444, Jan 14, 2010
Filed:

Mar 17, 2009
Appl. No.:

12/405503
Inventors:

Anis Nurashikin Nordin - Shah Alam, MY
Mona Zaghloul - Bethesda MD, US
International Classification:

H03H 9/25
H04R 31/00
H04R 17/00
US Classification:

333195, 29594, 29 2535
Abstract:

An improved SAW resonator fabricated using RF-CMOS technology is disclosed. The SAW resonator is capable of a resonant frequency of from about 1 GHz to about 3.12 GHz. Several different embodiments namely both single and double port resonators implemented in standard CMOS (0.6 μm) and RF-CMOS (0.18 μm) technologies are presented.

Thermally Actuated Rf Microelectromechanical Systems Switch
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US Patent:

20110063068, Mar 17, 2011
Filed:

Jun 30, 2010
Appl. No.:

12/828268
Inventors:

Shumin Zhang - Germantown MD, US
Mona Zaghloul - Bethesda MD, US
Wansheng Su - Gaithersburg MD, US
Anis Nurashikin Nordin - Selangor, MY
Assignee:

THE GEORGE WASHINGTON UNIVERSITY - Washington DC
International Classification:

H01H 37/02
US Classification:

337 35
Abstract:

A radio frequency (RF) micro electromechanical system (MEMS) switch formed on a substrate (e.g., a CMOS substrate). The RF MEMS switch includes a micromechanical member including a flexible switch membrane configured to move between an on state and an off state of the RF MEMS switch. The flexible switch membrane includes a first set of fingers on a sidewall thereof to be vertically coupled with a second set of fingers formed at an output of the RF MEMS switch on the substrate, and an actuation member in operable communication with the micromechanical member and configured to thermally actuate the micromechanical member such that the first set of fingers electrically couple with the second set of fingers upon thermal actuation of the micromechanical member to enable transmission of an RF signal.

Synchronous One-Pole Surface Acoustic Wave Resonator
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US Patent:

20120073390, Mar 29, 2012
Filed:

Mar 29, 2011
Appl. No.:

13/075088
Inventors:

Mona E. Zaghloul - Bethesda MD, US
Assignee:

The George Washington University - Washington DC
International Classification:

G01G 9/00
H01L 41/047
US Classification:

73865, 310313 D, 310313 A
Abstract:

A surface acoustic wave resonator including an input interdigital transducer (IDT), an output IDT, and a pair of gratings with each being spaced from each other by a predetermined distance and attached to a substrate. In at least one embodiment, the distance is equal to one-half of the wavelength of the acoustic wave produced by the input IDT. In a further embodiment, the surface acoustic wave further includes a polymer layer and a biomedical coating covering at least a part of the polymer layer. The surface acoustic wave resonator has uses in the mass sensor and communications fields.

Bipolar Stacked Transistor Architecture
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US Patent:

20120242410, Sep 27, 2012
Filed:

Mar 22, 2012
Appl. No.:

13/427311
Inventors:

Ali DARWISH - Laurel MD, US
Thomas J. FARM - Washington DC, US
Mona ZAGHLOUL - Bethesda MD, US
International Classification:

H03F 3/04
US Classification:

330288
Abstract:

An amplifier for an integrated circuit has a plurality of ratioed current mirrors connected to each other in a stacked configuration. Each ratio mirror has at least two resistors and at least two bipolar transistors connected to each other via said at least two resistors. Each amplifying transistor, contains a capacitor, and potentially and inductor, to internally match the transistors that make up the amplifying stack. DC, harmonic and s-parameter simulations are performed to provide an optimal impedance for each of the stacked transistors to maximize the RF power output of each stacked layer and the amplifier.

Apparatus For Generating Mini And Micro Plasmas And Methods Of Use
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US Patent:

20130015766, Jan 17, 2013
Filed:

May 11, 2012
Appl. No.:

13/469716
Inventors:

Mazdak TAGHIOSKOUI - Olney MD, US
Mona ZAGHLOUL - Bethesda MD, US
Assignee:

The George Washington University - Washington DC
International Classification:

H05H 1/50
US Classification:

31511141
Abstract:

Systems and methods for formation of an ultra high frequency atmospheric pressure plasma jet are presented. A magnetic loop has first and second ends and a gap for generating the plasmas. An inner arc provides RF power to the magnetic loop. Use of the described structure allows for generation of plasmas in air and in inert gases such as argon and helium. Various properties, including the non-thermal nature and shape of the plasma jet are discussed. Applications for utilizing the non-thermal plasma jet are provided.