Muhammad Imran

age ~41

from Brooklyn, NY

Also known as:
  • Imran Muhammad
  • Mohammad Imran
  • Imran Mohammad
  • Muhammad Inran
  • Muhammad Iam
  • Iam Muhammad

Muhammad Imran Phones & Addresses

  • Brooklyn, NY
  • Blevins, AR
  • San Jose, CA

Us Patents

  • Systems, Methods, And Apparatus For Production Coatings Of Low-Emissivity Glass

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  • US Patent:
    20170351013, Dec 7, 2017
  • Filed:
    Aug 2, 2017
  • Appl. No.:
    15/666603
  • Inventors:
    - Auburn Hills MI, US
    Jeremy CHENG - Cupertino CA, US
    Muhammad IMRAN - Brownstown MI, US
    Minh Huu LE - San Jose CA, US
    Daniel SCHWEIGERT - Fremont CA, US
    Yongli XU - Plymouth MI, US
    Guizhen ZHANG - Santa Clara CA, US
  • International Classification:
    G02B 5/20
    C03C 17/36
    C23C 14/14
    B29D 11/00
    G02F 1/09
    G02B 5/26
    E06B 9/24
    C03C 23/00
    C23C 14/22
    C23C 14/08
  • Abstract:
    Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. In some embodiments, a partially fabricated panel may be provided that includes a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer. The barrier layer may include a partially oxidized alloy of three or more metals. A first interface layer may be formed over the barrier layer. A top dielectric layer may be formed over the first interface layer. The top dielectric layer may be formed using reactive sputtering in an oxygen containing environment. The first interface layer may prevent further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer. A second interface layer may be formed over the top dielectric layer.
  • Systems, Methods, And Apparatus For Production Coatings Of Low-Emissivity Glass Including A Ternary Alloy

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  • US Patent:
    20170307793, Oct 26, 2017
  • Filed:
    Jul 10, 2017
  • Appl. No.:
    15/644991
  • Inventors:
    - San Jose CA, US
    - Auburn Hills MI, US
    Jeremy CHENG - Cupertino CA, US
    Guowen DING - San Jose CA, US
    Muhammad IMRAN - Hamilton NJ, US
    Minh Huu LE - San Jose CA, US
    Daniel SCHWEIGERT - Fremont CA, US
    Yongli XU - Plymouth MI, US
  • International Classification:
    G02B 5/20
    C03C 17/36
    C03C 17/36
    C03C 17/36
    C03C 17/36
    C03C 17/36
    C03C 17/36
    C23C 14/14
    C23C 14/08
    C23C 14/08
    G02F 1/09
    G02B 5/26
    E06B 9/24
    C03C 23/00
    B29D 11/00
    C23C 14/22
    E06B 9/24
    E06B 9/24
    G02F 1/09
  • Abstract:
    Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1.
  • Systems, Methods, And Apparatus For Production Coatings Of Low-Emissivity Glass Including A Ternary Alloy

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  • US Patent:
    20170052297, Feb 23, 2017
  • Filed:
    Nov 9, 2016
  • Appl. No.:
    15/346884
  • Inventors:
    - San Jose CA, US
    - Auburn Hills MI, US
    Jeremy CHENG - Cupertino CA, US
    Guowen DING - San Jose CA, US
    Muhammad IMRAN - Hamilton NJ, US
    Daniel SCHWEIGERT - Fremont CA, US
    Yongli XU - Plymouth MI, US
  • International Classification:
    G02B 5/20
    C23C 14/14
    G02B 5/26
    C03C 17/36
    C03C 23/00
    E06B 9/24
    C23C 14/08
    C23C 14/22
  • Abstract:
    Disclosed herein are systems, methods, and apparatus for forming low emissivity panels that may include a substrate and a reflective layer formed over the substrate. The low emissivity panels may further include a top dielectric layer formed over the reflective layer such that the reflective layer is formed between the top dielectric layer and the substrate. The top dielectric layer may include a ternary metal oxide, such as zinc tin aluminum oxide. The top dielectric layer may also include aluminum. The concentration of aluminum may be between about 1 atomic % and 15 atomic % or between about 2 atomic % and 10 atomic %. An atomic ratio of zinc to tin in the top dielectric layer may be between about 0.67 and about 1.5 or between about 0.9 and about 1.1.
  • Systems, Methods, And Apparatus For Production Coatings Of Low-Emissivity Glass

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  • US Patent:
    20140322507, Oct 30, 2014
  • Filed:
    Dec 31, 2013
  • Appl. No.:
    14/144915
  • Inventors:
    - San Jose CA, US
    Jeremy Cheng - Cupertino CA, US
    Muhammad Imran - Brownstown MI, US
    Minh Huu Le - San Jose CA, US
    Daniel Schweigert - Fremont CA, US
    Yongli Xu - Plymouth MI, US
    Guizhen Zhang - Santa Clara CA, US
  • Assignee:
    Intermolecular Inc. - San Jose CA
  • International Classification:
    C23C 14/08
    C23C 14/14
  • US Classification:
    428216, 20419227
  • Abstract:
    Disclosed herein are systems, methods, and apparatus for forming low emissivity panels. In some embodiments, a partially fabricated panel may be provided that includes a substrate, a reflective layer formed over the substrate, and a barrier layer formed over the reflective layer such that the reflective layer is formed between the substrate and the barrier layer. The barrier layer may include a partially oxidized alloy of three or more metals. A first interface layer may be formed over the barrier layer. A top dielectric layer may be formed over the first interface layer. The top dielectric layer may be formed using reactive sputtering in an oxygen containing environment. The first interface layer may prevent further oxidation of the partially oxidized alloy of the three or more metals when forming the top dielectric layer. A second interface layer may be formed over the top dielectric layer.
  • Heat Stable Snal And Snmg Based Dielectrics

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  • US Patent:
    20140287254, Sep 25, 2014
  • Filed:
    Jun 9, 2014
  • Appl. No.:
    14/299341
  • Inventors:
    - San Jose CA, US
    - Auburn Hills MI, US
    Guowen Ding - San Jose CA, US
    Muhammad Imran - Brownstown MI, US
    Jingyu Lao - Saline MI, US
    Minh Huu Le - San Jose CA, US
    Yiwei Lu - Ann Harbor MI, US
  • International Classification:
    C03C 17/36
    C23C 28/00
    H01B 3/10
  • US Classification:
    428471, 428472, 428469
  • Abstract:
    A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.

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