SelfOptima since Jan 2009
Founder & CEO
Morgenthaler Nov 2008 - Mar 2009
Entrepreneur-In-Residence (EIR)
Cisco Aug 2001 - Nov 2008
GM / Senior Director
AuroraNetics May 2000 - Aug 2001
CEO and Co-founder
Sebring Networks May 1999 - Jun 2000
VP Product Development
Education:
Southampton Solent University 1980 - 1981
University of California, Santa Barbara 1976 - 1979
Skills:
Start-ups Strategic Partnerships Microprocessors ASIC Venture Capital Processors Technology Leadership Integrated Circuit Design CMOS Organizational Development Business Development Operational Excellence
Interests:
Technical Advisory Board member for several private and public companies
Panel member for IEEE and DAC conferences
Guest speaker at USF, OD graduate program and UCB, Hass school of business.
Faculty of Business Psychology program at Pacific Graduate School of Psychology
Languages:
Persian
Name / Title
Company / Classification
Phones & Addresses
Nader Vasseghi Vice Presi, Vice President
Firetide Computer Networking · Radiotelephone Communication · Computer Peripheral Equipment Electrical Measuring Instruments Communication Services · Mfg Computer Peripheral Equipment Mfg Electrical Measuring Instruments Communication Services · Mfg Computer Peripheral Equipment Whol Computers/Peripherals · Mfg Radio/TV Communication Equipment · Cell Phone Service
2105 S Bascom Ave SUITE 220, Campbell, CA 95008 Campbell Ca, Phoenix, AZ 85032 140 Knowles Dr, Los Gatos, CA 95032 Campbell, CA 95008 4083997771, 4085592827
Nader Vasseghi President
AURORANETICS, INC
211 Riv Oaks Pkwy, San Jose, CA 95134
Nader Vasseghi
Metascience Enterprises Business Services · Enzymatic Therapies
At the time of the acquisition, it had 52 employees. Its CEO was Nader Vasseghi. Necdet Uzun was a key technologist and their representative to the 802.17 RPR working group.
Nader Vasseghi - Mountain View CA Donald G. Goddard - Cupertino CA Robert E. Eccles - Santa Clara CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H03K 1908 H03K 19003 H03K 1716 H03K 1756
US Classification:
307446
Abstract:
Output buffer circuits formed of merged bipolar transistor and CMOS transistors to produce either two output states or three output states includes a plurality of CMOS transistors and a pair of bipolar transistors. The output buffer circuits have high current drive capabilities and low propagation delay.
Nader Vasseghi - Mountain View CA Donald G. Goddard - Cupertino CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H03K 1908 H03K 19003 H03K 1716 H03K 1756
US Classification:
307446
Abstract:
Logic circuits formed of merged P-channel MOS transistors and bipolar transistors to produce a single logic gate include a plurality of P-channel MOS transistors and a pair of bipolar transistors. The logic gate circuits have low power dissipation and a large noise margin.
Hemmige D. Varadarajan - Sunnyvale CA Nader Vasseghi - Mountain View CA
Assignee:
Advanced Micro Devices, Inc. - Sunnyvale CA
International Classification:
H03K 19092 H03K 1901 H03K 1704 H03K 1760
US Classification:
307270
Abstract:
A line driver circuit is formed of a driver circuit section and a receiver circuit section. The driver circuit section provide a low impedance drive for charging and discharging quickly a capacitive load. A receiver circuit section includes an output level-shifting transistor which is adapted for translating a voltage at an output node of the driver circuit section to a compatible higher level.
Temperature-Compensated Interface Circuit Between "Or-Tied" Connection Of A Pla Device And A Ttl Output Buffer
An interface circuit (110) for interfacing between an "OR-tied" connection (P) of a programmable logic array device (10) and a TTL output buffer (36) includes a first bandgap generator (40), a high level clamp circuit (30), a second bandgap generator circuit (42), and a sensing circuit (26). The first bandgap generator (40) generates a first reference voltage (VB1) which has a positive temperature coefficient. The second bandgap generator (42) generates a second reference voltage (VB2) which has a negative temperature coefficient. A resultant base drive current (I. sub. x) is supplied to the base of a phase splitter transistor (Q2) in the output buffer (36). The resultant current (I. sub. x) is controlled by the first and second bandgap generators (40, 42), the current being higher at low temperatures and being smaller at high temperatures.
Nader Vasseghi 1979 graduate of University of Santa Barbara in Santa barbara, CA is on Classmates.com. See pictures, plan your class reunion and get caught up with Nader and other ...