Nancy M Slater

US Patent:

44949952, Jan 22, 1985

Filed:

Mar 1, 1983

Appl. No.:

6/471083

Inventors:

Abu N. M. M. Choudhury - Belmont MA
Nancy J. Slater Gabriel - Cambridge MA
Clifton G. Fonstad - Arlington MA

Assignee:

The United States of America as represented by the Secretary of the Navy - Washington DC

International Classification:

H01L 21265
H01L 2948
H01L 2956

US Classification:

148 15

Abstract:

A method for Ion implantation using multiple energy Be. sup. + to produce p-type regions in n-In. sub. 53 Ga. sub. 47 As. A simple technique is used to develop capless annealing of InGaAs up to 700. degree. C. The ion implantation of silicon is then accomplished to create n. sup. + layers in previously Be-implanted InGaAs epilayers. The active efficiency of 40% for 50 KeV Be implant has been found and efficiencies of 86% and 38% are found for the low and high energy Si implants respectively.