Nancy T Tran

US Patent:

6465159, Oct 15, 2002

Filed:

Jun 28, 1999

Appl. No.:

09/340743

Inventors:

Tuqiang Ni - Fremont CA
Nancy Tran - San Jose CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

G03F 736

US Classification:

430314, 430311, 430313, 430317, 216 37, 216 67, 438695, 438710, 438725

Abstract:

A robust method for etching an organic low-k insulating layer on a semiconductor device, as disclosed herein, includes introducing into a processing chamber a substrate with an organic insulating layer and an overlying mask layer having an aperture. A plasma is then developed within the chamber from an oxidizing gas and a passivation gas. The passivation gas is preferably either a silicon containing gas or a boron containing gas, or both. The ratio of the oxidizing gas to the passivation gas is preferably at least 10:1. In addition, an inert carrier gas may be provided. The plasma is then used to etch the organic insulating layer through the mask layer, thereby forming a via having essentially vertical sidewalls in the organic low-k insulating layer.

US Patent:

6982871, Jan 3, 2006

Filed:

Jun 22, 2004

Appl. No.:

10/873955

Inventors:

Richard Tran - Santa Ana CA, US
Nancy Tran - Santa Ana CA, US

International Classification:

H05K 5/00

US Classification:

361686, 713201, 709225

Abstract:

A computer system including a switch box and bracket assembly including one or more manual switches are provided for controlling the selective activation and deactivation of the computer systems' memory storage devices and network system. Preferably, the computer system includes a wire harnesses including a network cable for connecting a network to the bracket assembly's input port, a relay cable for connecting the bracket assembly's output port to the computer's network port and a manual switch. Instead of network communications being transmitted directly from the network to the network port, the signals are rerouted through the bracket assembly's input port, manual switch and output port, and then routed to the computer's network port. Access to the network is then controlled by simple manual manipulation of a button, toggle or knob to create an open or closed circuit.

US Patent:

20050216626, Sep 29, 2005

Filed:

Mar 24, 2004

Appl. No.:

10/808766

Inventors:

Richard Tran - Santa Ana CA, US
Nancy Tran - Santa Ana CA, US

International Classification:

G06F013/00

US Classification:

710100000

Abstract:

A computer system including a switch box is provided for controlling the selective activation and deactivation of the computer systems' memory storage devices. The switch box includes one or more pairs of switches with each pair including a power switch and a signal switch. The power switch selectively provides power to the corresponding power switches. Meanwhile, the signal switch selectively provides an open or closed circuit for allowing or restricting the transmission of data signals between the computers processor and memory storage device.

US Patent:

20060206643, Sep 14, 2006

Filed:

Feb 17, 2006

Appl. No.:

11/356810

Inventors:

Richard Tran - Santa Ana CA, US
Nancy Tran - Santa Ana CA, US

International Classification:

G06F 13/00

US Classification:

710100000

Abstract:

A computer system is provided including a variety of switch components for controlling the selective activation and deactivation of the computer systems' memory storage devices, network system and interface peripheral devices. The switching components may include a switch box having one or more switches for controlling activation and deactivation of various computer components. The switch components may also include a bracket assembly having an input port, output port and an intermediate manual switch for controlling the communication between a network and a computer's processor. The bracket assembly and switch box may also be constructed to control the transmission or restriction of power or data signals to a memory storage device or may control the transmission of power or data signals to one or more interface peripheral ports.

US Patent:

61973882, Mar 6, 2001

Filed:

Mar 31, 1999

Appl. No.:

9/283831

Inventors:

Thomas S. Choi - San Jose CA
John P. Holland - Santa Jose CA
Nancy Tran - San Jose CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H05H 124
C23D 120

US Classification:

427534

Abstract:

A method for processing a substrate having an aluminum neodymium-containing layer is disclosed. The aluminum neodymium-containing layer has residual chlorine proximate to its etch surface. The method includes providing a first gas chemistry including HBr and SF. sub. 6 which supplies a first plurality of fluorine ions, forming a first plasma from said first gas chemistry, passivating the etch surface of the aluminum neodymium-containing layer with the first plasma to cause a second plurality of fluorine ions to replace a first portion of the residual chlorine. This second plurality of fluorine ions is a subset of the first plurality of fluorine ions. The method further includes providing a second gas chemistry having hydrofluorocarbon and oxygen which provides a third plurality of fluorine ions and oxygen, forming a second plasma with the second gas chemistry, bombarding the etch surface of the aluminum neodymium-containing layer with the second plasma, causing a fourth plurality of fluorine ions to replace a second portion of the residual chlorine. This fourth plurality of fluorine ions is a subset of the third plurality of fluorine ions. The method additionally includes depositing a polymer material using a third plasma having hydrofluorocarbon to coat the etch surface of the aluminum neodymium-containing layer.