Nancy T Tran

US Patent:

6465159, Oct 15, 2002

Filed:

Jun 28, 1999

Appl. No.:

09/340743

Inventors:

Tuqiang Ni - Fremont CA
Nancy Tran - San Jose CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

G03F 736

US Classification:

430314, 430311, 430313, 430317, 216 37, 216 67, 438695, 438710, 438725

Abstract:

A robust method for etching an organic low-k insulating layer on a semiconductor device, as disclosed herein, includes introducing into a processing chamber a substrate with an organic insulating layer and an overlying mask layer having an aperture. A plasma is then developed within the chamber from an oxidizing gas and a passivation gas. The passivation gas is preferably either a silicon containing gas or a boron containing gas, or both. The ratio of the oxidizing gas to the passivation gas is preferably at least 10:1. In addition, an inert carrier gas may be provided. The plasma is then used to etch the organic insulating layer through the mask layer, thereby forming a via having essentially vertical sidewalls in the organic low-k insulating layer.

US Patent:

61973882, Mar 6, 2001

Filed:

Mar 31, 1999

Appl. No.:

9/283831

Inventors:

Thomas S. Choi - San Jose CA
John P. Holland - Santa Jose CA
Nancy Tran - San Jose CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H05H 124
C23D 120

US Classification:

427534

Abstract:

A method for processing a substrate having an aluminum neodymium-containing layer is disclosed. The aluminum neodymium-containing layer has residual chlorine proximate to its etch surface. The method includes providing a first gas chemistry including HBr and SF. sub. 6 which supplies a first plurality of fluorine ions, forming a first plasma from said first gas chemistry, passivating the etch surface of the aluminum neodymium-containing layer with the first plasma to cause a second plurality of fluorine ions to replace a first portion of the residual chlorine. This second plurality of fluorine ions is a subset of the first plurality of fluorine ions. The method further includes providing a second gas chemistry having hydrofluorocarbon and oxygen which provides a third plurality of fluorine ions and oxygen, forming a second plasma with the second gas chemistry, bombarding the etch surface of the aluminum neodymium-containing layer with the second plasma, causing a fourth plurality of fluorine ions to replace a second portion of the residual chlorine. This fourth plurality of fluorine ions is a subset of the third plurality of fluorine ions. The method additionally includes depositing a polymer material using a third plasma having hydrofluorocarbon to coat the etch surface of the aluminum neodymium-containing layer.