Naomi F Yoshida

US Patent:

8227352, Jul 24, 2012

Filed:

Apr 25, 2011

Appl. No.:

13/093679

Inventors:

Hang Yu - Woodland CA, US
Deenesh Padhi - Sunnyvale CA, US
Man-Ping Cai - Saratoga CA, US
Naomi Yoshida - Sunnyvale CA, US
Li Yan Miao - San Francisco CA, US
Siu F. Cheng - Los Angeles CA, US
Shahid Shaikh - Santa Clara CA, US
Sohyun Park - Fremont CA, US
Heung Lak Park - Santa Clara CA, US
Bok Hoen Kim - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/308
H01L 21/32

US Classification:

438703, 438761, 257E21258, 257E21231

Abstract:

Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.

US Patent:

8349741, Jan 8, 2013

Filed:

Apr 25, 2012

Appl. No.:

13/455916

Inventors:

Hang Yu - Woodland CA, US
Deenesh Padhi - Sunnyvale CA, US
Man-Ping Cai - Saratoga CA, US
Naomi Yoshida - Sunnyvale CA, US
Li Yan Miao - San Francisco CA, US
Siu F. Cheng - Los Angeles CA, US
Shahid Shaikh - Santa Clara CA, US
Sohyun Park - Fremont CA, US
Heung Lak Park - Santa Clara CA, US
Bok Hoen Kim - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/308
H01L 21/32

US Classification:

438703, 438761, 257E21258, 257E21231

Abstract:

Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.