Naotsugu Hoshi from Hillsboro, OR, age 47

Plasma Etching Method And Storage Medium
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US Patent:

20090111275, Apr 30, 2009
Filed:

Oct 21, 2008
Appl. No.:

12/254943
Inventors:

Naotsugu HOSHI - Portland OR, US
Noriyuki Kobayashi - Nirasaki-shi, JP
Assignee:

TOKYO ELECTRON LIMITED - Tokyo
International Classification:

H01L 21/3065
US Classification:

438710, 257E21218
Abstract:

A plasma etching method that can prevent residues from becoming attached to bottoms and sides of via holes and trenches. An interlayer insulation film formed of CF(x and w are predetermined natural numbers) and a metallic layer or a metal-containing layer formed on a substrate are exposed at the same time to plasma generated from a process gas. The process gas is a mixed gas including CF(y and z are predetermined natural numbers) gas and Ngas, and the flow rate of the Ngas in the process gas is higher than the flow rate of the CFgas.

Plasma Etching Method And Storage Medium
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US Patent:

20090137127, May 28, 2009
Filed:

Nov 18, 2008
Appl. No.:

12/273209
Inventors:

Naotsugu HOSHI - Portland OR, US
Noriyuki Kobayashi - Nirasaki-shi, JP
Assignee:

TOKYO ELECTRON LIMITED - Tokyo
International Classification:

H01L 21/467
G06F 19/00
US Classification:

438707, 700121, 257E21486
Abstract:

A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas.

Plasma Etching Method And Storage Medium
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US Patent:

20120309203, Dec 6, 2012
Filed:

Aug 13, 2012
Appl. No.:

13/584327
Inventors:

Naotsugu HOSHI - Portland OR, US
Noriyuki Kobayashi - Nirasaki-shi, JP
Assignee:

TOKYO ELECTRON LIMITED - Tokyo
International Classification:

H01L 21/3065
US Classification:

438714, 15634528, 257E21218
Abstract:

A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas.

Naotsugu Hoshi