Nathan H Newman

US Patent:

6734454, May 11, 2004

Filed:

Aug 26, 2002

Appl. No.:

10/229354

Inventors:

Theodore Van Duzer - El Cerrito CA
Nathan Newman - Scottsdale AZ
Lei Yu - Tempe AZ
Anupama Bhat Kaul - Pasadena CA

Assignee:

The Regents of the University of California - Oakland CA
The Arizona Board of Regents - Tempe AR

International Classification:

H01L 2906

US Classification:

257 31, 257 34, 257 35, 365162, 505162, 505190, 505329

Abstract:

A Josephson junction has inherent resistance which effectively shunts the junction and thereby obviates a separate shunt resistor and thus reduces surface area in an integrated circuit including a plurality of Josephson junctions. The Josephson junction comprises a stacked array of layers of Nb and a superconductor with T 9Â K having a penetration depth greater than that of Nb, for example Nb Ti N, with a layer of a conducting material having a resistivity between 200 -cm, 1 -cm, such as Ta N in the stack. The Josephson junction can be formed on a supporting substrate such as silicon with a ground plane such as Nb on the substrate and an insulating layer such as SiO separating the ground plane from the stacked array.

US Patent:

8073097, Dec 6, 2011

Filed:

Aug 29, 2005

Appl. No.:

11/214280

Inventors:

Francis Yu-Hei Tsang - Idaho Falls ID, US
Tristan Dieter Juergens - Telluride CO, US
Yale Deon Harker - Idaho Falls ID, US
Kwan Sze Kwok - Brooklyn NY, US
Nathan Newman - Scottsdale AZ, US
Scott Arden Ploger - Idaho Falls ID, US

Assignee:

Global Technologies, Inc. - Idaho Falls ID

International Classification:

G21D 7/00

US Classification:

376320, 376317, 136202, 322 88

Abstract:

The invention describes a product and a method for generating electrical power directly from nuclear power. More particularly, the invention describes the use of a liquid semiconductor as a means for efficiently converting nuclear energy, either nuclear fission and/or radiation energy, directly into electrical energy. Direct conversion of nuclear energy to electrical energy is achieved by placing nuclear material in close proximity to a liquid semiconductor. Nuclear energy emitted from the nuclear material, in the form of fission fragments or radiation, enters the liquid semiconductor and creates electron-hole pairs. By using an appropriate electrical circuit an electrical load is applied and electrical energy generated as a result of the creation of the electron-hole pairs.

US Patent:

8094771, Jan 10, 2012

Filed:

Nov 21, 2003

Appl. No.:

10/720035

Inventors:

Francis Yu-Hei Tsang - Idaho Falls ID, US
Tristan Dieter Juergens - Telluride CO, US
Yale Deon Harker - Idaho Falls ID, US
Kwan Sze Kwok - Brooklyn NY, US
Nathan Newman - Scottsdale AZ, US
Scott Arden Ploger - Idaho Falls ID, US

Assignee:

Global Technologies, Inc. - Idaho Falls ID

International Classification:

G21D 7/00

US Classification:

376320, 376317, 136202, 322 88

Abstract:

The invention describes a product and a method for generating electrical power directly from nuclear power. More particularly, the invention describes the use of a liquid semiconductor as a means for efficiently converting nuclear energy, either nuclear fission and/or radiation energy, directly into electrical energy. Direct conversion of nuclear energy to electrical energy is achieved by placing nuclear material in close proximity to a liquid semiconductor. Nuclear energy emitted from the nuclear material, in the form of fission fragments or radiation, enters the liquid semiconductor and creates electron-hole pairs. By using an appropriate electrical circuit an electrical load is applied and electrical energy generated as a result of the creation of the electron-hole pairs.

US Patent:

20040197537, Oct 7, 2004

Filed:

Jun 30, 2003

Appl. No.:

10/611780

Inventors:

Nathan Newman - Scottsdale AZ, US
Mark van Schilfgaarde - Tempe AZ, US
Shaojun Liu - Tempe AZ, US
Jihoon Kim - Chandler AZ, US

International Classification:

C04B035/495

US Classification:

428/209000, 428/701000, 428/689000, 428/901000, 501/135000

Abstract:

A class of material having barium, cadmium, and tantalum provides high dielectric constant and low loss for use in electronic and optical applications. The material may also contain an element with valence 2 such as magnesium and zinc. Transition metal dopants can also be added to reduce annealing time and/or to tune the temperature-coefficient of resonant frequency. The dielectric material can be made in ceramic or thin film form. The process begins with a mixture of barium carbonate, zinc oxide, tantalum oxide, and cadmium oxide blended together. The slurry is dried and heated. A sintering agent is added to produce high-density samples. The resulting slurry is dried and an adhesive is added to press the mixture into a solid ceramic samples. Thin film dielectric material is made with a thin film growth technique, such as by exposing the mixture to a laser and growing the material on a substrate.

US Patent:

20060251204, Nov 9, 2006

Filed:

Aug 29, 2005

Appl. No.:

11/214079

Inventors:

Francis Tsang - Idaho Falls ID, US
Tristan Juergens - Telluride CO, US
Yale Harker - Idaho Falls ID, US
Kwan Kwok - Brooklyn NY, US
Nathan Newman - Scottsdale AZ, US
Scott Ploger - Idaho Falls ID, US

International Classification:

G21D 7/00

US Classification:

376320000

Abstract:

The invention describes a product and a method for generating electrical power directly from nuclear power. More particularly, the invention describes the use of a liquid semiconductor as a means for efficiently converting nuclear energy, either nuclear fission and/or radiation energy, directly into electrical energy. Direct conversion of nuclear energy to electrical energy is achieved by placing nuclear material in close proximity to a liquid semiconductor. Nuclear energy emitted from the nuclear material, in the form of fission fragments or radiation, enters the liquid semiconductor and creates electron-hole pairs. By using an appropriate electrical circuit an electrical load is applied and electrical energy generated as a result of the creation of the electron-hole pairs.

US Patent:

20180205007, Jul 19, 2018

Filed:

Mar 14, 2018

Appl. No.:

15/921102

Inventors:

Nathan Newman - Tempe AZ, US
Lingtao Liu - Tempe AZ, US

International Classification:

H01L 43/08
H01B 3/12
C04B 35/468
C04B 35/491
C04B 35/495
H01B 3/10

Abstract:

Loss tangents in microwave dielectric materials may be modified (increased and/or reduced), particularly at cryogenic temperatures, via application of external magnetic fields. Exemplary electrical devices, such as resonators, filters, amplifiers, mixers, and photonic detectors, configured with dielectric components having applied magnetic fields may achieve improvements in quality factor and/or modifications in loss tangent exceeding two orders of magnitude.

US Patent:

20160379821, Dec 29, 2016

Filed:

Jun 23, 2014

Appl. No.:

14/900307

Inventors:

Nathan Newman - Tempe AZ, US
Mahmoud Vahidi - Tempe AZ, US
Stephen Lehner - Tempe AZ, US
Peter Buseck - Tempe AZ, US

International Classification:

H01L 21/02
H01L 29/24
H01L 29/04

Abstract:

A method for preparing a device having a film on a substrate is disclosed. In the method, a film is deposited on a substrate. The film includes a single-crystalline or poly-crystalline semiconducting thin film. The single-crystalline or poly-crystalline semiconducting thin film is formed by sequential evaporation of a first and a second element. One example device prepared by the method includes a silicon substrate and a film on the substrate, wherein the film includes semiconducting and single- or poly-crystalline pyrite as the compound.

US Patent:

20160352314, Dec 1, 2016

Filed:

Aug 20, 2014

Appl. No.:

14/464518

Inventors:

Nathan Newman - Tempe AZ, US
Lingtao Liu - Tempe AZ, US

International Classification:

H03K 3/59
H01L 43/08

Abstract:

Loss tangents in microwave dielectric materials may be modified (increased and/or reduced), particularly at cryogenic temperatures, via application of external magnetic fields. Exemplary electrical devices, such as resonators, filters, amplifiers, mixers, and photonic detectors, configured with dielectric components having applied magnetic fields may achieve improvements in quality factor and/or modifications in loss tangent exceeding two orders of magnitude.