Nathan N Newman

US Patent:

20040197537, Oct 7, 2004

Filed:

Jun 30, 2003

Appl. No.:

10/611780

Inventors:

Nathan Newman - Scottsdale AZ, US
Mark van Schilfgaarde - Tempe AZ, US
Shaojun Liu - Tempe AZ, US
Jihoon Kim - Chandler AZ, US

International Classification:

C04B035/495

US Classification:

428/209000, 428/701000, 428/689000, 428/901000, 501/135000

Abstract:

A class of material having barium, cadmium, and tantalum provides high dielectric constant and low loss for use in electronic and optical applications. The material may also contain an element with valence 2 such as magnesium and zinc. Transition metal dopants can also be added to reduce annealing time and/or to tune the temperature-coefficient of resonant frequency. The dielectric material can be made in ceramic or thin film form. The process begins with a mixture of barium carbonate, zinc oxide, tantalum oxide, and cadmium oxide blended together. The slurry is dried and heated. A sintering agent is added to produce high-density samples. The resulting slurry is dried and an adhesive is added to press the mixture into a solid ceramic samples. Thin film dielectric material is made with a thin film growth technique, such as by exposing the mixture to a laser and growing the material on a substrate.

US Patent:

20180205007, Jul 19, 2018

Filed:

Mar 14, 2018

Appl. No.:

15/921102

Inventors:

Nathan Newman - Tempe AZ, US
Lingtao Liu - Tempe AZ, US

International Classification:

H01L 43/08
H01B 3/12
C04B 35/468
C04B 35/491
C04B 35/495
H01B 3/10

Abstract:

Loss tangents in microwave dielectric materials may be modified (increased and/or reduced), particularly at cryogenic temperatures, via application of external magnetic fields. Exemplary electrical devices, such as resonators, filters, amplifiers, mixers, and photonic detectors, configured with dielectric components having applied magnetic fields may achieve improvements in quality factor and/or modifications in loss tangent exceeding two orders of magnitude.

US Patent:

20160379821, Dec 29, 2016

Filed:

Jun 23, 2014

Appl. No.:

14/900307

Inventors:

Nathan Newman - Tempe AZ, US
Mahmoud Vahidi - Tempe AZ, US
Stephen Lehner - Tempe AZ, US
Peter Buseck - Tempe AZ, US

International Classification:

H01L 21/02
H01L 29/24
H01L 29/04

Abstract:

A method for preparing a device having a film on a substrate is disclosed. In the method, a film is deposited on a substrate. The film includes a single-crystalline or poly-crystalline semiconducting thin film. The single-crystalline or poly-crystalline semiconducting thin film is formed by sequential evaporation of a first and a second element. One example device prepared by the method includes a silicon substrate and a film on the substrate, wherein the film includes semiconducting and single- or poly-crystalline pyrite as the compound.

US Patent:

20160352314, Dec 1, 2016

Filed:

Aug 20, 2014

Appl. No.:

14/464518

Inventors:

Nathan Newman - Tempe AZ, US
Lingtao Liu - Tempe AZ, US

International Classification:

H03K 3/59
H01L 43/08

Abstract:

Loss tangents in microwave dielectric materials may be modified (increased and/or reduced), particularly at cryogenic temperatures, via application of external magnetic fields. Exemplary electrical devices, such as resonators, filters, amplifiers, mixers, and photonic detectors, configured with dielectric components having applied magnetic fields may achieve improvements in quality factor and/or modifications in loss tangent exceeding two orders of magnitude.