Nathan G Stoddard

US Patent:

20140027430, Jan 30, 2014

Filed:

Jul 30, 2012

Appl. No.:

13/561456

Inventors:

Nathan STODDARD - Beaverton OR, US

International Classification:

H05B 1/00

US Classification:

219158

Abstract:

Apparatus for the melting of silicon comprising a container for holding pieces of silicon and at least one means for heating silicon inside the container, wherein the container comprises a tube extending in a longitudinal direction for holding pieces of silicon and a bottom, wherein the tube is arranged on the bottom, wherein the bottom comprises at least one outlet for letting out melted silicon, and wherein the means for heating comprises at least one coil.

US Patent:

20140030501, Jan 30, 2014

Filed:

Jul 30, 2012

Appl. No.:

13/561350

Inventors:

Nathan STODDARD - Beaverton OR, US
Wilfred Von AMMON - , US

International Classification:

C30B 15/08
C30B 15/20
C30B 15/14

US Classification:

428220, 117217, 117 34, 117 15

Abstract:

Apparatus and method for a crucible-less production of silicon ingots, wherein a support with a seed layer and a liquid layer is gradually lowered in a temperature field with a vertical gradient to solidify the liquid layer in a controlled way.

US Patent:

20220325438, Oct 13, 2022

Filed:

Aug 9, 2020

Appl. No.:

17/634044

Inventors:

- Wilmington MA, US
Alison Greenlee - Somerville MA, US
Nathan Stoddard - Chalfont PA, US
Peter Kellerman - Essex MA, US
Parthiv Daggolu - Danvers MA, US
Alexander Martinez - Woburn MA, US
Saeed Pirooz - Lexington MA, US

International Classification:

C30B 29/06

Abstract:

A single crystal silicon wafer has a thickness between a first surface and an opposite second surface from 50 μm to 300 μm. The wafer includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to an adjacent region of the wafer. The wafer has a bulk minority carrier lifetime greater than 100 μs.

US Patent:

20220316087, Oct 6, 2022

Filed:

Aug 9, 2020

Appl. No.:

17/634176

Inventors:

- Wilmington MA, US
Nathan Stoddard - Chalfont PA, US
Jesse S. Appel - South Hamilton MA, US
Peter Kellerman - Essex MA, US
Parthiv Daggolu - Danvers MA, US
Alexander Martinez - Woburn MA, US
Saeed Pirooz - Lexington MA, US
Brandon Williard - Essex MA, US
Charles Bowen - Hampton NH, US
Brian McMullen - Taunton MA, US
David Morrell - Wakefield MA, US
Dawei SUN - Lynnfield MA, US

International Classification:

C30B 15/06
C30B 29/06
C30B 29/64

Abstract:

A ribbon is formed such that the ribbon floats on a melt using a cold initializer facing an exposed surface of the melt. The ribbon is single crystal silicon. The ribbon is pulled from the silicon melt at a low angle off the melt surface. The ribbon is formed at a same rate as the pulling. The ribbon is separated from the melt at a wall of the crucible where a stable meniscus forms. The ribbon has a thickness between a first surface and an opposite second surface from 50 μm to 5 mm. The ribbon includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to a bulk of the ribbon.

US Patent:

20230099939, Mar 30, 2023

Filed:

Feb 19, 2021

Appl. No.:

17/801181

Inventors:

- Wilmington MA, US
Alison GREENLEE - Somerville MA, US
Parthiv DAGGOLU - Danvers MA, US
Alexander MARTINEZ - Woburn MA, US
Nathan STODDARD - Chalfont PA, US

International Classification:

C30B 15/14
C30B 15/00
C30B 29/06
C30B 15/06
C30B 15/22

Abstract:

An apparatus for controlling a thickness of a crystalline ribbon grown on a surface of a melt includes a crucible configured to hold a melt; a cold initializer facing an exposed surface of the melt; a segmented cooled thinning controller disposed above the crucible on a side of the crucible with the cold initializer; and a uniform melt-back heater disposed below of the crucible opposite the cooled thinning controller. Heat is applied to the ribbon through the melt using a uniform melt-back heater disposed below the melt. Cooling is applied to the ribbon using a segmented cooled thinning controller facing the crystalline ribbon above the melt.

US Patent:

20210156047, May 27, 2021

Filed:

Nov 25, 2019

Appl. No.:

16/694226

Inventors:

- Wilmington DE, US
Nathan Stoddard - Winchester CA, US

International Classification:

C30B 35/00
C30B 15/14
C30B 15/10

Abstract:

An apparatus for growing a crystal includes a growth chamber and a melt chamber thermally isolated from the growth chamber. The growth chamber includes: a growth crucible configured to contain a liquid melt; and a die located in the growth crucible, the die having a die opening and one or more capillaries extending from within the growth crucible toward the die opening. The melt chamber includes: a melt crucible configured to receive feedstock material; and at least one heating element positioned within the melt chamber relative to the melt crucible to melt the feedstock material within the melt crucible to form the liquid melt. The apparatus also includes at least one capillary conveyor in fluid communication with the melt crucible and the growth crucible to transport the liquid melt from the melt crucible to the growth crucible.

US Patent:

20190190443, Jun 20, 2019

Filed:

Feb 26, 2019

Appl. No.:

16/285312

Inventors:

- San Jose CA, US
Matthias Georgi - Dresden, DE
Nathan Stoddard - Beaverton OR, US
Beryl Weinshenker - Portland OR, US
Steven Meredith - Bonn, DE

Assignee:

SunPower Corporation - San Jose CA

International Classification:

H02S 40/22
H02S 20/10
H02S 40/44
H02S 20/24
H02S 20/30

Abstract:

Various embodiments are related to an arrangement of a plurality of photovoltaic modules. Each photovoltaic module has a light receiving front side and a light receiving back side. The photovoltaic modules of the plurality of photovoltaic modules are arranged in one or more rows to form photovoltaic module rows. One or more photovoltaic module rows are extended substantially in a direction of around North-South and the front sides of the photovoltaic modules of the one or more photovoltaic module rows are sloped substantially in a direction of predominantly North or South. The arrangement further has a plurality of mounting members. Each mounting member defines a space between respective two photovoltaic modules in one photovoltaic module row that are mechanically connected with the respective mounting member. Each mounting member of the plurality of mounting members has a bottom part; a long leg; and a short leg. The long leg and the short leg respectively extend upwards from an end of the bottom part. The mounting members further have a reflector configured to reflect light to the back side of at least one of the connected photovoltaic modules.

US Patent:

20190181801, Jun 13, 2019

Filed:

Feb 18, 2019

Appl. No.:

16/278184

Inventors:

- San Jose CA, US
Nathan Stoddard - Beaverton OR, US
Steve Sefchick - Portland OR, US
Eric Olson - Vancouver WA, US

Assignee:

SunPower Corporation - San Jose CA

International Classification:

H02S 40/36
H02S 40/32
H02S 40/34
F24S 25/20
H02S 30/10

Abstract:

Corner connection members for a photovoltaic module frame include thru-passages for receiving insert components that perform and facilitate a variety of functions, such as attaching the photovoltaic module to a roof, providing a ground connection for the solar cells, to facilitate the mechanical and electrical connection of photovoltaic modules which are arranged side-by-side, to facilitate securing photovoltaic modules in a stack, and providing mechanical and electrical connections to adjacent photovoltaic modules in an array. Insert components may also include electronic devices, such as microinverters and energy storage devices, which are connected to the photovoltaic modules when the insert component is installed in the corner member.