Neelkanth G Dhere

US Patent:

20070257255, Nov 8, 2007

Filed:

May 8, 2007

Appl. No.:

11/745621

Inventors:

Neelkanth G. Dhere - Merritt Island FL, US
Ankur A. Kadam - Santa Clara CA, US

International Classification:

H01L 29/08
H01L 21/00
H01L 31/00
H01L 35/24
H01L 51/00

US Classification:

257 40, 438 84, 438 95, 257188

Abstract:

A method of forming a CIGSS absorber layer includes the steps of providing a metal precursor, and selenizing the metal precursor using diethyl selenium to form a selenized metal precursor layer (CIGSS absorber layer). A high efficiency solar cell includes a CIGSS absorber layer formed by a process including selenizing a metal precursor using diethyl selenium to form the CIGSS absorber layer.

US Patent:

20150101650, Apr 16, 2015

Filed:

Sep 19, 2014

Appl. No.:

14/491057

Inventors:

Neelkanth G. Dhere - Merritt Island FL, US
Ramesh G. Dhere - Lakewood CO, US
Narendra S. Shiradkar - Orlando FL, US
Eric Schneller - Sebastian FL, US

Assignee:

University of Central Florida Research Foundation, Inc. - Orlando FL
Episolar, Inc. - Romeoville IL

International Classification:

H02S 50/10
G01R 31/02
G01R 31/40

US Classification:

136244, 32476101

Abstract:

A diagnostic device () having layers () corresponding to respective layers () of a given photovoltaic module (). The diagnostic device is provided for testing and monitoring a condition of the given photovoltaic module. The layers of the diagnostic device may be made of respective materials with the same or substantially the same electrical resistance and aging characteristics as the respective layers of the given photovoltaic module under operational conditions. Electrodes (A-C, A-C, A-C) of the diagnostic device are configured to independently measure electrical resistance along at least two different current resistance paths in the diagnostic device corresponding to respectively different current leakage paths (R R′ R- R R) of the given photovoltaic module.