Neil K Colvin

US Patent:

7683348, Mar 23, 2010

Filed:

Oct 11, 2006

Appl. No.:

11/548295

Inventors:

W Davis Lee - Boston MA, US
Neil K Colvin - Merrimack NH, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

G21K 5/10

US Classification:

25049221, 250396 R, 250397, 2504911, 324 713

Abstract:

A Faraday cup structure for use with a processing tool. The cup structure has a conductive strike plate coupled to a circuit for monitoring ions striking the strike plate to obtain an indication of the ion beam current. The electrically conductive strike plate is fronted by a mask for dividing an ion beam intercepting cross section into regions or segments. The mask including walls extending to the strike plate for impeding ions reaching the sensor and particles dislodged from the sensor from entering into the evacuated region of the processing tool.

US Patent:

8242469, Aug 14, 2012

Filed:

Jul 13, 2010

Appl. No.:

12/835138

Inventors:

Neil K. Colvin - Merrimack NH, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 37/317
H01J 37/02

US Classification:

25049221, 250251, 2505051

Abstract:

An apparatus is provided for reducing particle contamination in an ion implantation system. The apparatus has an enclosure having an entrance, an exit, and at least one louvered side having a plurality of louvers defined therein. A beamline of the ion implantation system passes through the entrance and exit, wherein the plurality of louvers of the at least one louvered side are configured to mechanically filter an edge of an ion beam traveling along the beamline. The enclosure can have two louvered sides and a louvered top, wherein respective widths of the entrance and exit of the enclosure, when measured perpendicular to the beamline, are generally defined by a position of the two louvered sides with respect to one another. One or more of the louvered sides can be adjustably mounted, wherein the width of one or more of the entrance and exit of the enclosure is controllable.

US Patent:

8604418, Dec 10, 2013

Filed:

Apr 6, 2010

Appl. No.:

12/755081

Inventors:

Neil K. Colvin - Merrimack NH, US
Jincheng Zhang - Brighton MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

B01D 59/44

US Classification:

250281

Abstract:

A method is provided for reducing particle contamination in an ion implantation system, wherein an ion implantation system having source, mass analyzer, resolving aperture, decel suppression plate, and end station is provided. An ion beam is formed via the ion source, and a workpiece is transferred between an external environment and the end station for ion implantation thereto. A decel suppression voltage applied to the decel suppression plate is modulated concurrent with the workpiece transfer, therein causing the ion beam to expand and contract, wherein one or more surfaces of the resolving aperture and/or one or more components downstream of the resolving aperture are impacted by the ion beam, therein mitigating subsequent contamination of workpieces from previously deposited material residing on the one or more surfaces. The contamination can be mitigated by removing the previously deposited material or strongly adhering the previously deposited material to the one or more surfaces.

US Patent:

20080230713, Sep 25, 2008

Filed:

Mar 22, 2007

Appl. No.:

11/689769

Inventors:

Yongzhang Huang - Hamilton MA, US
Neil K. Colvin - Merrimack NH, US
Kevin J. Hoyt - Sandown NH, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

H01J 27/02

US Classification:

250426

Abstract:

An exemplary ion source for creating a stream of ions has a chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirectly heats a cathode to sufficient temperature to cause electrons to stream through the ionization region of the arc chamber. A seals has a ceramic body having an outer wall that abuts the arc chamber body along a circumferential outer lip. The seal also has one or more radially inner channels bounded by one or more inner walls spaced inwardly from the outer wall.

US Patent:

20120118232, May 17, 2012

Filed:

Nov 17, 2010

Appl. No.:

12/948369

Inventors:

Neil K. Colvin - Merrimack NH, US
Tseh-Jen Hsieh - Rowley MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

C23C 14/48
H05H 15/00

US Classification:

118723 R, 204164

Abstract:

A system, apparatus and method for increasing ion source lifetime in an ion implanter are provided. Oxidation of the ion source and ion source chamber poisoning resulting from a carbon and oxygen-containing source gas is controlled by utilizing a hydrogen co-gas, which reacts with free oxygen atoms to form hydroxide and water.

US Patent:

20120119113, May 17, 2012

Filed:

Nov 17, 2010

Appl. No.:

12/948309

Inventors:

Neil K. Colvin - Merrimack NH, US
Tseh-Jen Hsieh - Rowley MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

G21G 5/00

US Classification:

2504923

Abstract:

An ion implantation system for improving performance and extending lifetime of an ion source is disclosed. A fluorine-containing dopant gas source is introduced into the ion chamber along with one or more co-gases. The one or more co-gases can include hydrogen or krypton. The co-gases mitigate the effects caused by free fluorine ions in the ion source chamber which lead to ion source failure.

US Patent:

20130140473, Jun 6, 2013

Filed:

Dec 1, 2011

Appl. No.:

13/308795

Inventors:

Neil K. Colvin - Merrimack NH, US
Tseh-Jen Hsieh - Rowley MA, US

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

G21K 5/00

US Classification:

2504923

Abstract:

An ion implantation system for improving performance and extending lifetime of an ion source is disclosed whereby the selection, delivery, optimization and control of the flow rate of a co-gas into an ion source chamber is automatically controlled.

US Patent:

20200388468, Dec 10, 2020

Filed:

May 29, 2020

Appl. No.:

16/887571

Inventors:

- Beverly MA, US
Neil Bassom - Hamilton MA, US
Neil K. Colvin - Merrimack NH, US
Mike Ameen - Newburyport MA, US
Xiao Xu - Needham MA, US

International Classification:

H01J 37/32
H01J 37/08
H01J 37/317

Abstract:

An ion source assembly and method has a source gas supply to provide a molecular carbon source gas to an ion source chamber. A source gas flow controller controls flow of the molecular carbon source gas to the ion source chamber. An excitation source excites the molecular carbon source gas to form carbon ions and radicals. An extraction electrode extracts the carbon ions from the ion source chamber, forming an ion beam. An oxidizing co-gas supply provides oxidizing co-gas to chamber. An oxidizing co-gas flow controller controls flow of the oxidizing co-gas to the chamber. The oxidizing co-gas decomposes and reacts with carbonaceous residues and atomic carbon forming carbon monoxide and carbon dioxide within the ion source chamber. A vacuum pump system removes the carbon monoxide and carbon dioxide, where deposition of atomic carbon within the ion source chamber is reduced and a lifetime of the ion source is increased.