Owner at 374 Consulting, LLC, Certified Shadow Work Coach at Shadow Work Seminars, Inc., Board VP, Grant Writer, Life Coach, Instructor at 374 Consulting, LLC
Location:
Traverse City, Michigan
Industry:
Professional Training & Coaching
Work:
374 Consulting, LLC - Traverse City, MI since Apr 2013
Owner
Shadow Work Seminars, Inc. - Traverse City, Michigan since 2010
Certified Shadow Work Coach
374 Consulting, LLC - Traverse City, Mich since Apr 2009
Board VP, Grant Writer, Life Coach, Instructor
Handy Andys Handyman Service, Inc. Jul 2000 - Aug 2009
Co-Owner - President
Education:
Walden University 2009 - 2014
PhD Organizational Psychology, Consulting, Dissertation Phase
Michigan State University 1995 - 1997
Master of Arts Curriculum and Teaching, Curriculum development and Teacher education
The Ohio State University 1982 - 1985
Agricultural Education/Agronomy, Teaching/Science/Agronomy
Skills:
Clean Talk Trainer Free at Last Facilitator Grief Counseling Program Development Community Outreach Public Speaking Leadership Development Non-profits Coaching Conflict Resolution Fundraising Career Counseling Staff Development Team Building Personal Development Reintegration Phenomenologcial Research Training Social Networking Stress Management Volunteer Management Mental Health
Neil Hendricks - Sonora CA Douglas M. Smith - Albuquerque NM Teresa Ramos - Albuquerque NM James Drage - Fremont CA
Assignee:
AlliedSignal Inc. - Morristown NJ
International Classification:
H01L 2131
US Classification:
438782, 438780, 438781, 427240
Abstract:
A process for forming a uniform nanoporous dielectric film on a substrate. The process includes horizontally positioning a flat substrate within a cup; depositing a liquid alkoxysilane composition onto the substrate surface; covering the cup such that the substrate is enclosed therein; spinning the covered cup and spreading the alkoxysilane composition evenly on the substrate surface; exposing the alkoxysilane composition to water vapor and base vapor to thereby form a gel; and then curing the gel. The invention also provides an apparatus for spin depositing a liquid coating onto a substrate. The apparatus has a cylindrical cup with an open top section and removable cover which closes the top. A vapor injection port extends through the center of the cover. Suitable means hold a substrate centered within the cup and spin the cup.
Poly(Arylene Ether) Compositions And The Method For Their Manufacture
A method is disclosed for making hydroxy-substituted ethynylated biphenyl compounds and for reacting such compounds with a family of noncross-linking thermosetting poly(arylene ethers) to produce novel poly(arylene ether) compositions which, when cured at glass transition temperatures greater than about 350Â C. to form thin films, possess properties such as low dielectric constant, low moisture absorption, and high thermal stability. These films are suitable for use as intermetal dielectrics for multilevel interconnection.
Silane-Based Nanoporous Silica Thin Films And Precursors For Making Same
Improved processes for forming hydrophobic nanoporous dielectric coatings on substrates are provided. The improved processes involve forming a reaction mixture that combines at least one mono-, di- or trifunctional precursor with at least one tetrafunctional precursor, recovering the reaction product, and then depositing the reaction product onto a suitable substrate, followed by gelling of the deposited film. Precursors include alkoxy, acetoxy and halogen leaving groups. Optional processes to enhance the hydrophobicity of a nanoporous silica film are also provided, as well as improved nanoporous silica films, coated substrates and integrated circuits prepared by the new processes.
Oxidizing Polishing Slurries For Low Dielectric Constant Materials
Dan Towery - Santa Clara CA Neil Hendricks - Sonora CA Paul Schilling - Granite Bay CA
Assignee:
Honeywell International Inc. - Morristown NJ
International Classification:
C09G 102
US Classification:
51308, 51307, 51309, 106 3
Abstract:
An oxidizing slurry for removal of low dielectric constant materials. The slurry is formed utilizing non-oxidizing particles with a separate oxidizing agent, oxidizing particles alone or reducible abrasive particles with a compatible oxidizing agent. The particles can be formed of a metal oxide, nitride, or carbide material, by itself or mixtures thereof, or can be coated on a core material such as silicon dioxide or can be coformed therewith. A preferred oxidizing slurry is multi-modal in particle size distribution. Although developed for utilization in CMP semiconductor processing the oxidizing slurry of the present invention also can be utilized for other high precision polishing processes.
Deposition Of Nanoporous Silica Films Using A Closed Cup Coater
Neil Hendricks - Sonora CA Douglas M. Smith - Albuquerque NM Teresa Ramos - Albuquerque NM James Drage - Fremont CA
Assignee:
AlliedSignal Inc. - Morristown NJ
International Classification:
B05C 1102
US Classification:
118 52, 427240, 427425
Abstract:
A process for forming a uniform nanoporous dielectric film on a substrate. The process includes horizontally positioning a flat substrate within a cup; depositing a liquid alkoxysilane composition onto the substrate surface; covering the cup such that the substrate is enclosed therein; spinning the covered cup and spreading the alkoxysilane composition evenly on the substrate surface; exposing the alkoxysilane composition to water vapor and base vapor to thereby form a gel; and then curing the gel. The invention also provides an apparatus for spin depositing a liquid coating onto a substrate. The apparatus has a cylindrical cup with an open top section and removable cover which closes the top. A vapor injection port extends through the center of the cover. Suitable means hold a substrate centered within the cup and spin the cup.
Complex Shaped Fiber For Particle And Molecular Filtration
Neil H. Hendricks - Sonora CA Jeff Miller - Los Gatos CA Ron P. Rohrbach - Flemington NJ Dan E. Bause - Flanders NJ Peter D. Unger - Morris Township NJ Adel G. Tannous - Santa Clara CA Randy R. LeClaire - Pleasanton CA William E. McGeever - Morgan Hill CA
An ultra-efficient multilobal cross-sectioned fiber filter for chemical contaminant filtering applications is described. An absorptive chemically reactive reagent, preferably an acid or base and in liquid or an adsorptive chemically reactive reagent (an acid or base) in solid form, is disposed within longitudinal slots in each length of fiber. The reagent may be used alone or in conjunction with solid adsorptive particles which may also be utilized with the reagents in the longitudinal slots within the fibers. Reagents within the fibers remain exposed to a base-contaminated airstream passing through the filter. Base contaminants in the airstream, chemicals such as ammonium and amines (as well as particles), react with the acid reagent within the longitudinal slots of the fibers. As the contaminant and reagent react, the ammonium or amine becomes irreversibly absorbed (or adsorbed if reagent is a solid acid) to the liquid acid reagent and multilobal fiber.
Electron-Beam Processed Films For Microelectronics Structures
An improved method for producing substrates coated with dielectric films for use in microelectronic applications wherein the films are processed by exposing the coated substrate surfaces to a flux of electron beam. Substrates cured via electron beam exposure possess superior dielectric properties, density, uniformity, thermal stability, and oxygen stability.
Composition And Chemical Vapor Deposition Method For Forming Organic Low K Dielectric Films
Precursor compositions for the CVD formation of low k dielectric films on a substrate, e. g. , as an interlayer dielectric for fabrication of microelectronic device structures. The precursor composition includes a gaseous mixture of (i) at least one aromatic compound, (ii) an inert carrier medium and (iii) optionally at least one unsaturated constituent that is ethylenically and/or acetylenically unsaturated The unsaturated constituent can include either (a) a compound containing ethylenic unsaturation and/or acetylenic unsaturation, or (b) an ethylenically unsaturated and/or acetylenically unsaturated moiety of the aromatic compound (i) of the precursor composition. The low k dielectric film material may be usefully employed in integrated circuitry utilizing copper metallization, to achieve low RC time constants and superior microelectronic device performance.