Nhan H Do

US Patent:

7851846, Dec 14, 2010

Filed:

Dec 3, 2008

Appl. No.:

12/327114

Inventors:

Nhan Do - Saratoga CA, US
Hieu V. Tran - San Jose CA, US
Amitay Levi - Cupertino CA, US

Assignee:

Silicon Storage Technology, Inc. - Sunnyvale CA

International Classification:

H01L 29/788
H01L 21/28

US Classification:

257320, 257319, 257E293, 257E21179, 438257, 438267

Abstract:

A memory device, and method of making the same, in which a trench is formed into the surface of a semiconductor substrate. Source and drain regions define a channel region there between. The drain is formed under the trench. The channel region includes a first portion that extends along a bottom wall of the trench, a second portion that extends along a sidewall of the trench, and a third portion that extends along the surface of the substrate. The floating gate is disposed over the channel region third portion. The control gate is disposed over the floating gate. The select gate is at least partially disposed in the trench and adjacent to the channel region first and second portions. The erase gate disposed adjacent to and insulated from the floating gate.

US Patent:

8148768, Apr 3, 2012

Filed:

Nov 26, 2008

Appl. No.:

12/324816

Inventors:

Nhan Do - Saratoga CA, US
Amitay Levi - Cupertino CA, US

Assignee:

Silicon Storage Technology, Inc. - Sunnyvale CA

International Classification:

H01L 29/788

US Classification:

257315, 257204, 257316, 257E293, 257E21422, 438588

Abstract:

A memory device, and method of making the same, in which a trench is formed into a substrate of semiconductor material. The source region is formed under the trench, and the channel region between the source and drain regions includes a first portion that extends substantially along a sidewall of the trench and a second portion that extends substantially along the surface of the substrate. The floating gate is disposed in the trench, and is insulated from the channel region first portion for controlling its conductivity. The control gate is disposed over and insulated from the channel region second portion, for controlling its conductivity. The erase gate is disposed at least partially over and insulated from the floating gate. The erase gate includes a notch, and the floating gate includes an edge that directly faces and is insulated from the notch.

US Patent:

8384147, Feb 26, 2013

Filed:

Apr 29, 2011

Appl. No.:

13/097766

Inventors:

Nhan Do - Saratoga CA, US
Amitay Levi - Cupertino CA, US

Assignee:

Silicon Storage Technology, Inc. - San Jose CA

International Classification:

H01L 29/792
H01L 29/788
G11C 7/00

US Classification:

257315, 257321, 3651851

Abstract:

Systems of electrically programmable and erasable memory cell are disclosed. In one exemplary implementation, a cell may have two storage transistors in a substrate of semiconductor material of a first cooductivity type The first storage transistor is of the type having a first region and a second region each of a second conductivity type in the substrate The second storage transistor is of the type having a third region and a fourth region each of a second conductivity type in the substrate. Arrays formed of such memory cells and non-volatile memory cells are also disclosed.

US Patent:

8513728, Aug 20, 2013

Filed:

Nov 17, 2011

Appl. No.:

13/299320

Inventors:

Parviz Ghazavi - San Jose CA, US
Hieu Van Tran - San Jose CA, US
Nhan Do - Saratoga CA, US

Assignee:

Silicon Storage Technology, Inc. - San Jose CA

International Classification:

H01L 29/788

US Classification:

257320, 257316, 257319, 257E293

Abstract:

An array of non-volatile memory cells with spaced apart first regions extending in a row direction and second regions extending in a column direction, with a channel region defined between each second region and its associated first region. A plurality of spaced apart word line gates each extending in the row direction and positioned over a first portion of a channel region. A plurality of spaced apart floating gates are positioned over second portions of the channel regions. A plurality of spaced apart coupling gates each extending in the row direction and over the floating gates. A plurality of spaced apart metal strapping lines each extending in the row direction and overlying a coupling gate. A plurality of spaced apart erase gates each extending in the row direction and positioned over a first region and adjacent to a floating gate and coupling gate.

US Patent:

20020140010, Oct 3, 2002

Filed:

Mar 29, 2001

Appl. No.:

09/821320

Inventors:

Truc Vu - Tustin CA, US
Frank Calabretta - Costa Mesa CA, US
James Asbrock - Oceanside CA, US
Nhan Do - San Jose CA, US

International Classification:

H04N005/335

US Classification:

257/294000, 348/294000

Abstract:

A detector with a transistor sensitive to electromagnetic energy. In accordance with the present teachings, the transistor is biased such that the output thereof is responsive to the electromagnetic energy. The inventive imager includes an array of the novel detectors. Each of the detectors being an n-channel metal-oxide semiconductor transistor with a floating body. The transistors are biased for selective activation and sequential readout. The transistor outputs are read by a differential current sense amplifier. A color filter is disclosed to provide a color sense capability. As an alternative, a grating is provided for this purpose. The present invention allows a very dense imager to be built on using conventional silicon on sapphire or silicon on insulator complementary metal-oxide semiconductor processes. The use of standard CMOS processes allows for low manufacturing costs.

US Patent:

20130121085, May 16, 2013

Filed:

May 3, 2012

Appl. No.:

13/463558

Inventors:

Nhan Do - Saratoga CA, US
Elizabeth A. Cuevas - Los Gatos CA, US
Yuri Tkachev - Sunnyvale CA, US
Mandana Tadayoni - Cupertino CA, US

International Classification:

G11C 16/26

US Classification:

36518529, 36518518

Abstract:

A method of operating a memory cell that comprises first and second regions spaced apart in a substrate with a channel region therebetween, a floating gate disposed over the channel region and the first region, a control gate disposed over the channel region and laterally adjacent to the floating gate with a portion disposed over the floating gate, and a coupling gate disposed over the first region and laterally adjacent to the floating gate. A method of erasing the memory cell includes applying a positive voltage to the control gate and a negative voltage to the coupling gate. A method of reading the memory cell includes applying positive voltages to the control gate, to the coupling gate, and to one of the first and second regions.

US Patent:

20130234223, Sep 12, 2013

Filed:

Mar 7, 2012

Appl. No.:

13/414400

Inventors:

Willem-Jan Toren - St. Maximin, FR
Xian Liu - Sunnyvale CA, US
Gerhard Metzger-Brueckl - Geisenfeld, DE
Nhan Do - Saratoga CA, US
Stephan Wege - Bannewitz-Cunnersdorf, DE
Nadia Miridi - Auriol, FR
Chien-Sheng Su - Saratoga CA, US
Cecile Bernardi - Bouc Bel Air, FR
Liz Cuevas - Los Gatos CA, US
Florence Guyot - Venelles, FR
Yueh-Hsin Chen - Pleasanton CA, US
Mandana Tadayoni - Cupertino CA, US

International Classification:

H01L 27/088
H01L 21/762

US Classification:

257316, 438424, 257E293, 257E2706, 257E21546

Abstract:

A stack gate structure for a non-volatile memory array has a semiconductor substrate having a plurality of substantially parallel spaced apart active regions, with each active region having an axis in a first direction. A first insulating material is between each stack gate structure in the second direction perpendicular to the first direction. Each stack gate structure has a second insulating material over the active region, a charge holding gate over the second insulating material, a third insulating material over the charge holding gate, and a first portion of a control gate over the third insulating material. A second portion of the control gate is over the first portion of the control gate and over the first insulating material adjacent thereto and extending in the second direction. A fourth insulating material is over the second portion of the control gate.

US Patent:

20130242672, Sep 19, 2013

Filed:

Mar 13, 2012

Appl. No.:

13/419269

Inventors:

Hieu Van Tran - San Jose CA, US
Hung Quoc Nguyen - Fremont CA, US
Nhan Do - Saratoga CA, US

International Classification:

G11C 16/04

US Classification:

36518529

Abstract:

An array of non-volatile memory cells in a semiconductor substrate of a first conductivity type. Each memory cell comprises first and second regions of a second conductivity type on a surface of the substrate, with a channel region therebetween. A word line overlies one portion of the channel region, is adjacent to the first region, and has little or no overlap with the first region. A floating gate overlies another portion of the channel region, and is adjacent to the first portion and the second region. A coupling gate overlies the floating gate. An erase gate overlies the second region. A bit line is connected to the first region. A negative charge pump circuit generates a negative voltage. A control circuit generates a plurality of control signals in response to receiving a command signal, and applies the negative voltage to the word line of unselected memory cells.