Nicholas G Miller

US Patent:

45399336, Sep 10, 1985

Filed:

Aug 31, 1983

Appl. No.:

6/528193

Inventors:

Bryant A. Campbell - Los Gatos CA
Dale R. DuBois - Los Gatos CA
Ralph F. Manriquez - Saratoga CA
Nicholas E. Miller - Cupertino CA

Assignee:

Anicon, Inc. - San Jose CA

International Classification:

C23C 1308

US Classification:

118719

Abstract:

An improved chemical vapor deposition device having heating means substantially surrounding an inner deposition chamber for providing isothermal or precisely controlled gradient temperature conditions therein. The internal components of the chamber are quartz or similar radiant energy transparent material. Also included are special cooling means to protect thermally sensitive seals, structural configurations strengthening areas of glass components subjected to severe stress during operation, and specific designs permitting easy removal and replacement of all glass components exposed to deposition gas.

US Patent:

53206800, Jun 14, 1994

Filed:

Apr 25, 1991

Appl. No.:

7/691470

Inventors:

Arthur J. Learn - Cupertino CA
Dale R. Du Bois - Los Gatos CA
Nicholas E. Miller - Cupertino CA
Richard A. Seilheimer - Pleasanton CA

Assignee:

Silicon Valley Group, Inc. - San Jose CA

International Classification:

C23C 1600
C23C 1646

US Classification:

118724

Abstract:

A chemical vapor deposition apparatus comprising a hot wall reaction tube, one or more reaction gas preheaters, a reaction gas exhaust outlet, and substantially eddy free reaction gas flow control means for passing reaction gases in a substantially laminar flow from a preheater to the exhaust outlet. The gas flow control means includes a tube flange positioned to be in a substantially eddy free relationship with the end of the wafer boat zone, the flange having a curved surface means extending from the end of the wafer boat zone to the outer tube for directing the reaction gas flow out of or into the reaction zone while maintaining the gas in a state of substantially laminar flow. One reaction gas preheater comprises a first heating tube having a removable baffle. A second reaction gas preheater comprises a two wall cylindrical heater with inner surface deformations. The two wall cylindrical heater and the heating tube each can have a plurality of gas injector ports with central axes positioned to cause immediate mixing of gases injected therefrom.

US Patent:

45453276, Oct 8, 1985

Filed:

Aug 27, 1982

Appl. No.:

6/412237

Inventors:

Bryant A. Campbell - Los Gatos CA
Nicholas E. Miller - Cupertino CA

Assignee:

Anicon, Inc. - San Jose CA

International Classification:

C23C 1308

US Classification:

118719

Abstract:

A chemical vapor deposition device having uniformly distributed heating means substantially surrounding an inner deposition reaction chamber for providing isothermal or precisely controlled gradient temperature conditions therein, the reaction chamber being surrounded by the walls of an outer vacuum chamber spaced therefrom.

US Patent:

45247196, Jun 25, 1985

Filed:

Sep 6, 1983

Appl. No.:

6/529415

Inventors:

Bryant A. Campbell - Los Gatos CA
Dale R. DuBois - Los Gatos CA
Ralph F. Manriquez - Saratoga CA
Nicholas E. Miller - Cupertino CA

Assignee:

Anicon, Inc. - San Jose CA

International Classification:

C23C 1308

US Classification:

118719

Abstract:

A controlled temperature deposition device comprising an inner reaction chamber having gas distribution means for introducing gas into inner chamber and removing gas therefrom and a vacuum chamber means surrounding the inner deposition chamber and spaced from the walls thereof for maintaining a medium vacuum therein. Associated with the deposition device is a substrate loading and unloading fork which transfers substrates such as wafer boats from outside the device to a position in the inner deposition chamber and removes them from the inner deposition chamber following deposition.

US Patent:

45474044, Oct 15, 1985

Filed:

Oct 2, 1984

Appl. No.:

6/657313

Inventors:

Bryant A. Campbell - Los Gatos CA
Nicholas E. Miller - Cupertino CA

Assignee:

Anicon, Inc. - San Jose CA

International Classification:

C23C 1100

US Classification:

4272481

Abstract:

A chemical vapor deposition device having uniformly distributed heating means substantially surrounding an inner deposition reaction chamber for providing isothermal or precisely controlled gradient temperature conditions therein, the reaction chamber being surrounded by the walls of an outer vacuum chamber spaced therefrom.

US Patent:

47940190, Dec 27, 1988

Filed:

Oct 22, 1987

Appl. No.:

7/115579

Inventors:

Nicholas E. Miller - Cupertino CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B05D 512

US Classification:

427124

Abstract:

Process for depositing tungsten or other refractory metals on semiconductor devices by a reaction of a gas containing the metal in a vapor deposition reactor. The reaction occurs at relatively low temperature (240. degree. -400. degree. C. ) and pressure (0. 1-10 torr), and the resulting film adheres differently to different substrate materials. Patterned coatings can be made without the patterning steps which are required with prior art techniques.

US Patent:

20220337218, Oct 20, 2022

Filed:

Jun 23, 2022

Appl. No.:

17/847438

Inventors:

- Santa Clara CA, US
Nicholas Miller - Sunnyvale CA, US
Charles I. Grosjean - Los Gatos CA, US
Paul M. Hagelin - Saratoga CA, US
Ginel C. Hill - Sunnyvale CA, US

International Classification:

H03H 9/125
H03H 3/007
H03H 9/02
H03H 9/10
H03H 9/24
H03H 9/17

Abstract:

A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

US Patent:

20210326371, Oct 21, 2021

Filed:

Apr 15, 2020

Appl. No.:

16/849885

Inventors:

- San Jose CA, US
Yu Gong - San Jose CA, US
Tushar Dublish - Noida, IN
Sasha Spala - Arlington MA, US
Sachin Soni - Delhi, IN
Nicholas Miller - Boston MA, US
Joon Kim - Dublin CA, US
Franck Dernoncourt - Sunnyvale CA, US
Carl Dockhorn - San Jose CA, US
Ajinkya Kale - San Jose CA, US

International Classification:

G06F 16/33
G06N 20/00
G06N 5/04
G06F 40/30

Abstract:

Techniques and systems are described for performing semantic text searches. A semantic text-searching solution uses a machine learning system (such as a deep learning system) to determine associations between the semantic meanings of words. These associations are not limited by the spelling, syntax, grammar, or even definition of words. Instead, the associations can be based on the context in which characters, words, and/or phrases are used in relation to one another. In response to detecting a request to locate text within an electronic document associated with a keyword, the semantic text-searching solution can return strings within the document that have matching and/or related semantic meanings or contexts, in addition to exact matches (e.g., string matches) within the document. The semantic text-searching solution can then output an indication of the matching strings.