Nicholas F Schmidt

US Patent:

6396107, May 28, 2002

Filed:

Nov 20, 2000

Appl. No.:

09/716749

Inventors:

Ciaran J. Brennan - Essex Junction VT
Douglas B. Hershberger - Essex Junction VT
Mankoo Lee - Essex Junction VT
Nicholas T. Schmidt - Colchester VT
Steven H. Voldman - South Burlington VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2362

US Classification:

257362, 257197

Abstract:

A silicon-germanium ESD element comprises a substrate of a first dopant type coupled to a first voltage terminal and a first diode-configured element. The first diode-configured element has a collector region of a second dopant type in the substrate, a SiGe base layer of the first dopant type on the collector region, with the SiGe base layer including a base contact region, and an emitter of the second dopant type on the SiGe base layer. Preferably, the SiGe base layer ion the collector region is an epitaxial SiGe layer and the second dopant type of the emitter is diffused in to the SiGe base layer. The ESD element of the present invention may further include a second diode-configured element of the same structure as the first diode-configured element, with an isolation region in the substrate separating the first and second diode-configured elements. The first and second diode-configured elements form a diode network. In each of the embodiments, the isolation regions may be disposed adjacent the collector regions of the diode elements and below a portion of the SiGe base layer of the diode elements.

US Patent:

7692271, Apr 6, 2010

Filed:

Feb 28, 2007

Appl. No.:

11/679987

Inventors:

Frederick Gustav Anderson - South Burlington VT, US
Robert Mark Rassel - Colchester VT, US
Nicholas Theodore Schmidt - Colchester VT, US
Xudong Wang - Groton MA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/93

US Classification:

257601, 257E29344, 438379

Abstract:

Structure and methods for a differential junction varactor. The structure includes: a silicon first region formed in a silicon substrate, the first region of a first dopant type; and a plurality of silicon second regions in physical and electrical contact with the first region, the plurality of second regions spaced apart and not in physical contact with each other, the plurality of second regions of a second dopant type, the first dopant type different from the second dopant type; a cathode terminal electrically connected to the first region; a first anode terminal electrically connected to a first set of second regions of the plurality of second regions; and a second anode terminal electrically connected to a second set of second silicon regions of the plurality of second regions, second regions of the first set of second regions alternating with second regions of the second set of second regions.

US Patent:

20170147726, May 25, 2017

Filed:

Jan 27, 2017

Appl. No.:

15/418015

Inventors:

- Grand Cayman, KY
Nicholas T. Schmidt - Colchester VT, US

Assignee:

GLOBALFOUNDRIES INC. - GRAND CAYMAN

International Classification:

G06F 17/50

Abstract:

A temperature change of a device on an integrated circuit chip due to self-heating and thermal coupling with other device(s) is modeled considering inefficient heat removal from the backside of the chip. To perform such modeling, ratios of an imaginary heat amount to an actual heat amount for different locations on the IC chip must be predetermined using a test integrated circuit (IC) chip. During testing, one test device at one specific location on the test IC chip is selected to function as a heat source, while at least two other test devices at other locations on the test IC chip function as temperature sensors. The heat source is biased and changes in temperature at the heat source and at the sensors are determined. These changes are used to calculate the value of the imaginary heat amount to actual heat amount ratio to be associated with the specific location.

US Patent:

20160378897, Dec 29, 2016

Filed:

Jun 24, 2015

Appl. No.:

14/748595

Inventors:

- Armonk NY, US
Nicholas T. Schmidt - Colchester VT, US

International Classification:

G06F 17/50

Abstract:

A temperature change of a device on an integrated circuit chip due to self-heating and thermal coupling with other device(s) is modeled considering inefficient heat removal from the backside of the chip. To perform such modeling, ratios of an imaginary heat amount to an actual heat amount for different locations on the IC chip must be predetermined using a test integrated circuit (IC) chip. During testing, one test device at one specific location on the test IC chip is selected to function as a heat source, while at least two other test devices at other locations on the test IC chip function as temperature sensors. The heat source is biased and changes in temperature at the heat source and at the sensors are determined. These changes are used to calculate the value of the imaginary heat amount to actual heat amount ratio to be associated with the specific location.