Nicholas Enos White

US Patent:

7326941, Feb 5, 2008

Filed:

Aug 22, 2005

Appl. No.:

11/209476

Inventors:

Jiong Chen - San Jose CA, US
Nicholas R. White - Manchester MA, US

Assignee:

Advanced Ion Beam Technology, Inc. - San Jose CA

International Classification:

H01J 37/317
H01J 37/08
H01J 37/147

US Classification:

25049221, 250423 R, 250424, 250294, 250298, 250299, 250283, 335210

Abstract:

This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.

US Patent:

7462843, Dec 9, 2008

Filed:

Aug 22, 2005

Appl. No.:

11/209484

Inventors:

Jiong Chen - San Jose CA, US
Nicholas R. White - Manchester MA, US

Assignee:

Advanced ION Bean Technology Inc. - San Jose CA

International Classification:

G21K 5/10

US Classification:

25049221, 2504921, 2504922

Abstract:

This invention discloses an ion implantation apparatus with multiple operating modes. It has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. The invention further discloses a two-path beamline in which a second path incorporates a deceleration system incorporating energy filtering. The invention discloses methods of ion implantation in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning, and from a simple path to an s-shaped path with deceleration.

US Patent:

7902527, Mar 8, 2011

Filed:

Aug 19, 2008

Appl. No.:

12/194515

Inventors:

Jiong Chen - San Jose CA, US
Nicholas R. White - Manchester MA, US

International Classification:

H01J 37/317
H01J 37/28
G21K 1/00

US Classification:

25049221, 2504922, 2504923, 250396 R, 250398, 250281, 250282

Abstract:

An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.

US Patent:

20220359157, Nov 10, 2022

Filed:

May 5, 2022

Appl. No.:

17/737079

Inventors:

- San Francisco CA, US
Robert WEISS - San Francisco CA, US
David BROWN - San Francisco CA, US
Nicholas WHITE - Manchester MA, US

International Classification:

H01J 37/317
H01J 37/08

Abstract:

A treatment system and process includes a ribbon beam ion source that is configured to implant ions into a product to modify a portion of the product; multiple means of controlling the temperature of the product; the means including radiative conduction, gas conduction to a heatsink by means of a gas cushion, adjustment of the ion beam density at the product, adjustment of the ion beam intensity at the product and ion beam acceleration parameters, and adjustment of the ion dose to the product b; and a product movement system configured to move the product through the treatment system past the ribbon beam ion source. The treatment system further includes a system controller configured to control at least one the following: the gas cushion system, the ribbon beam ion source, the temperature control system, the heatsink, and the product movement system.

US Patent:

20200369670, Nov 26, 2020

Filed:

May 7, 2020

Appl. No.:

16/869512

Inventors:

- South San Francisco CA, US
Nicholas Andrew White - San Francisco CA, US
Haiming Zhang - San Mateo CA, US
Francis Gosselin - San Mateo CA, US
William Nack - Glenview IL, US
Paul D. O'Shea - Princeton NJ, US

Assignee:

Genentech, Inc. - South San Francisco CA

International Classification:

C07D 487/04
C07F 9/24

Abstract:

A method of regio-selectively synthesizing an imidazo-pyrimidine compound of formulae (XXa) or (XXb)comprising a step of coupling a first compound of formula XX-P1a or XX-P1b with a second compound of formula XX-P2This annulation reaction between β-ethoxy acrylamides and phosphorylated aminoimidazoles to furnish imidazo[1,2-a]pyrimidin-amines relies on steering effects from endocyclic and exocyclic phosphorylated aminoimidazoles. The reaction furnishes either 2-amino or 4-amino constitutional isomers of imidazo[1,2-a]pyrimidines with good yields and ranges of 90:10-99:1 regio-selectivity. The reaction is useful in the synthesis of various tracer molecules used in the study of neurological conditions such as where Rand Rtogether with the imidazole ring atoms to which they are bonded form a phenyl ring and the products are substituted benzimidazopyrimidines. The reaction can be generalized to form imidazo[1,2-a]pyrimidines substituted at either of their 2- and 4-positions by alkoxy or thioalkyl groups.

US Patent:

20200354369, Nov 12, 2020

Filed:

May 7, 2020

Appl. No.:

16/869475

Inventors:

- South San Francisco CA, US
Nicholas Andrew White - San Francisco CA, US
Haiming Zhang - San Mateo CA, US
Francis Gosselin - San Mateo CA, US
William Nack - Glenview IL, US
Paul D. O'Shea - Princeton NJ, US

Assignee:

Genentech, Inc. - South San Francisco CA

International Classification:

C07D 487/04

Abstract:

A method of synthesizingcomprising a step of making an imidazo-pyrimidine compound by coupling a first compound of formula (II) with a second compound of formula (III)Followed by a deprotection and tosylation step. The methods are able to produce an isotopically substituted molecule having upwards of 95% purity relative to non-isotopically substituted molecules.The invention further comprises compounds of formula:

US Patent:

20160111245, Apr 21, 2016

Filed:

Oct 20, 2014

Appl. No.:

14/519080

Inventors:

- Hsin-Chu, TW
Nicholas WHITE - Fremont CA, US

International Classification:

H01J 37/147
H01J 37/317
H05H 5/04

Abstract:

An electrode assembly for accelerating or decelerating an ion beam is provided. In one example, the electrode assembly may include a pair of exit electrodes adjacent to an exit opening of the electrode assembly. The pair of exit electrodes may be positioned on opposite sides of a first plane aligned with a first dimension of the exit opening. A pair of pierce electrodes may be adjacent to the pair of exit electrodes. The pair of pierce electrodes may be positioned on opposite sides of a second plane aligned with a second dimension of the exit opening. The second dimension of the exit opening may be perpendicular to the first dimension of the exit opening. Each pierce electrode may include an angled surface positioned such that a dimension of the angled surface forms an angle of between 40 and 80 degrees with respect to the second plane.