Nikki L Edleman

US Patent:

7998869, Aug 16, 2011

Filed:

Oct 31, 2008

Appl. No.:

12/262860

Inventors:

Sung-Chul Park - Fishkill NY, US
Nikki Edleman - Pawling NY, US
Alois Gutmann - Heverlee, BE
Fang Chen - Singapore, SG

Assignee:

Samsung Electronics Co., Ltd. - Suwon-si, Gyeonggi-do

International Classification:

H01L 21/311

US Classification:

438700

Abstract:

A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.

US Patent:

8236699, Aug 7, 2012

Filed:

Feb 7, 2011

Appl. No.:

13/021842

Inventors:

Sung-Chul Park - Fishkill NY, US
Nikki Edleman - Pawling NY, US
Alois Gutmann - Heverlee, BE
Fang Chen - Singapore, SG

Assignee:

Infineon North - Durham NC
Samsung Electronics Co., Ltd. - Suwon-si
International Business Machines Corporation - Armonk NY
Chartered Semiconductor Manufacturing Ltd. - Singapore
Infineon Technologies AG - Neubiberg

International Classification:

H01L 21/311

US Classification:

438700

Abstract:

A method for forming a contact hole in a semiconductor device and related computer-readable storage medium are provided, the method and program steps of the medium including measuring a percentage of oxygen in an etching chamber, and controlling the percentage of oxygen in the etching chamber to enlarge a temporary inner diameter near a top of the contact hole.

US Patent:

20030118865, Jun 26, 2003

Filed:

Aug 27, 2002

Appl. No.:

10/228521

Inventors:

Tobin Marks - Evanston IL, US
He Yan - Evanston IL, US
Jun Ni - Evanston IL, US
Ji Cul - Waltham MA, US
Anchuan Wang - Fremont CA, US
Nikki Edleman - Pawling NY, US

International Classification:

H05B033/12
H01B001/08

US Classification:

428/690000, 428/917000, 313/504000, 313/503000, 252/518100, 427/066000

Abstract:

Transparent conducting oxide compositions having enhanced work function, for use with anode structures and light-emitting diode devices.

US Patent:

20050070064, Mar 31, 2005

Filed:

Sep 25, 2003

Appl. No.:

10/605362

Inventors:

Nikki Edleman - Pawling NY, US
Richard Wise - New Windsor NY, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - ARMONK NY

International Classification:

H01L021/8234

US Classification:

438243000, 438386000

Abstract:

Disclosed is a method of manufacturing a deep trench capacitor structure that forms a trench in a substrate, lines the trench with a polysilicon liner, and forms titanium nitride columns along the polysilicon liner. The method etches the titanium nitride columns using chlorine-based dry chemistry that is substantially isotropic. This etching process removes the upper portion of the titanium nitride columns without affecting the polysilicon liner. The etching process attacks only in the uppermost portion of the titanium nitride columns such that, after the etching process is completed, the remaining lower portions of the titanium nitride columns are substantially unaffected by the etching process. Then, the method fills the space between the titanium nitride columns and the upper portion of the trench with additional polysilicon material. The process of filling the space simultaneously forms a polysilicon plug and polysilicon cap.