Oliver Genz

US Patent:

6352893, Mar 5, 2002

Filed:

Jun 3, 1999

Appl. No.:

09/324927

Inventors:

Alexander Michaelis - Wappingers Falls NY
Stephan Kudelka - Fishkill NY
Jochen Beintner - Wappingers Falls NY
Oliver Genz - Wappingers Falls NY

Assignee:

Infineon Technologies AG - Munich

International Classification:

H01L 218242

US Classification:

438248, 438391, 438408, 438441, 438770

Abstract:

A method for fabricating a semiconductor device, in accordance with the present invention, includes the steps of providing a semiconductor wafer having exposed p-doped silicon regions and placing the wafer in an electrochemical cell such that a solution including electrolytes interacts with the exposed p-doped silicon regions to form an oxide on the exposed p-doped silicon regions when a potential difference is provided between the wafer and the solution.

US Patent:

6387771, May 14, 2002

Filed:

Jun 8, 1999

Appl. No.:

09/327711

Inventors:

Oliver Genz - Wappingers Falls NY
Alexander Michaelis - Wappingers Falls NY

Assignee:

Infineon Technologies AG - Munich

International Classification:

H01L 2120

US Classification:

438386, 438243, 205124, 216 41, 216 42, 216 43, 216 44, 216 47, 216 48, 216 49, 216 51

Abstract:

A method for forming a valve metal oxide for semiconductor fabrication in accordance with the present invention is disclosed and claimed. The method includes the steps of providing a semiconductor wafer, depositing a valve metal on the wafer, placing the wafer in an electrochemical cell such that a solution including electrolytes interacts with the valve metal to form a metal oxide when a potential difference is provided between the valve metal and the solution and processing the wafer using the metal oxide layer.

US Patent:

60316144, Feb 29, 2000

Filed:

Dec 2, 1998

Appl. No.:

9/204402

Inventors:

Alexander Michaelis - Wappingers Falls NY
Oliver Genz - Wappingers Falls NY
Ulrich Mantz - Poughkeepsie NY

Assignee:

Siemens Aktiengesellschaft - Munich

International Classification:

G01J 400

US Classification:

356369

Abstract:

A system for measuring surface features having form birefringence in accordance with the present invention includes a radiation source for providing radiation incident on a surface having surface features. A radiation detecting device is provided for measuring characteristics of the incident radiation after being reflected from the surface features. A rotating stage rotates the surface such that incident light is directed at different angles due to the rotation of the rotating stage. A processor is included for processing the measured characteristics of the reflected light and correlating the characteristics to measure the surface features. A method for measuring feature sizes having form birefringence, in accordance with the present invention includes the steps of providing a surface having surface features thereon, radiating the surface features with light having a first polarization, measuring a reflected polarization of light reflected from the surface features, rotating the surface features by rotating the surface to measure the reflected polarization of the reflected light at least one new rotated position and correlating the reflected polarization to surface feature sizes.