Oscar Damian Lopez

US Patent:

20110164955, Jul 7, 2011

Filed:

Jul 13, 2010

Appl. No.:

12/835511

Inventors:

John M. White - Hayward CA, US
Jeonghoon Oh - San Jose CA, US
Tom K. Cho - Los Altos Hills CA, US
Silja James - Mountain View CA, US
Uday Pai - San Jose CA, US
Oscar Lopez - Watsonville CA, US
Alexander S. Polyak - San Jose CA, US

Assignee:

APPLIED MATERIALS,INC. - Santa Clara CA

International Classification:

H01L 21/683
F16M 11/00

US Classification:

414800, 24834601

Abstract:

Embodiments of a method and apparatus for processing large area substrates including a translational wear plate and/or bushing assembly are provided for reducing the stress on a lift pin used to space substrates from a substrate support in a processing or other type of chamber. In another embodiment, an apparatus for processing substrates includes processing chamber comprising a substrate support disposed in a chamber body. A bushing assembly is disposed in the substrate support. A lift pin is disposed through the bushing assembly. A wear plate is provided that is coupled to the chamber body and aligned with the lift pin. The wear plate is movable laterally relative to a centerline of the chamber body to accommodate lateral motion of the lift pin when contacting the wear plate.

US Patent:

20220283330, Sep 8, 2022

Filed:

Mar 3, 2021

Appl. No.:

17/191506

Inventors:

- Houston TX, US
Oscar Barrios Lopez - Conroe TX, US
Pedro William Palacios - Katy TX, US

Assignee:

Halliburton Energy Services, Inc. - Houston TX

International Classification:

G01V 1/36
G01V 1/46

Abstract:

A method for computing attenuation from seismic data. The method may include measuring one or more seismic events with a distributed acoustic sensing (DAS) system to form a well log of one or more traces. The method may further include isolating a first seismic event with a tapered windowing function, performing a spectral ratio of two or more pairs of traces in the well log, identifying a velocity at each of the one or more traces in the well log, identifying an analytic correction for a gauge of the DAS system, and applying the analytic correction to the spectral ratio to form a corrected spectral ratio. Additionally, the method may include identifying a slope of the corrected spectral ratio for at least a part of the well log, converting the slope to a Q value, and identifying one or more formation properties in a formation from the Q value.

US Patent:

20180080125, Mar 22, 2018

Filed:

Nov 27, 2017

Appl. No.:

15/822551

Inventors:

- Santa Clara CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Yihong CHEN - San Jose CA, US
Abhijit Basu MALLICK - Fremont CA, US
Oscar LOPEZ - San Jose CA, US
Ningli LIU - Sunnyvale CA, US

International Classification:

C23C 16/455
H01J 37/32
C23C 16/458
C23C 16/509

Abstract:

Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD).

US Patent:

20150376788, Dec 31, 2015

Filed:

Aug 26, 2014

Appl. No.:

14/468665

Inventors:

- Santa Clara CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Yihong CHEN - San Jose CA, US
Abhijit Basu MALLICK - Fremont CA, US
Oscar LOPEZ - San Jose CA, US
Ningli LIU - Cupertino CA, US

International Classification:

C23C 16/455
C23C 16/40
C23C 16/46
C23C 16/458
C23C 16/505

Abstract:

Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD).

Address:

6823 Quail Br Na, San Antonio, TX 78250

Phone:

9152414263

VIN:

4T1BK3EK1BU120198

Make:

TOYOTA

Model:

CAMRY

Year:

2011

Address:

3217 Hage St, Houston, TX 77093

VIN:

3GNFK12377G171195

Make:

CHEVROLET

Model:

AVALANCHE

Year:

2007

Address:

6061 Beverlyhill St APT 267, Houston, TX 77057

VIN:

5J6YH18337L009679

Make:

HONDA

Model:

ELEMENT

Year:

2007