Patrick R Webb

US Patent:

6437950, Aug 20, 2002

Filed:

Oct 12, 2000

Appl. No.:

09/687404

Inventors:

Phong Chau - San Jose CA
Mustafa Pinarbasi - Morgan Hill CA
Hua A. Zeng - San Jose CA
Patrick Rush Webb - San Jose CA

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G11B 539

US Classification:

36032411, 36032412

Abstract:

A top spin valve sensor includes an iridium manganese (IrMn) pinning layer which has been formed by ion beam sputter deposition. The magnetoresistive coefficient of the spin valve sensor is increased by employing an iridium manganese oxide (IrMnO) seed layer between a free layer of the spin valve sensor and a first read gap layer of the read head. The free layer is preferably a nickel iron free film located between first and second cobalt iron (CoFe) free films.

US Patent:

6621660, Sep 16, 2003

Filed:

Jan 16, 2001

Appl. No.:

09/764019

Inventors:

Richard Hsiao - San Jose CA
Neil Leslie Robertson - Palo Alto CA
Patrick Rush Webb - San Jose CA

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G11B 5147

US Classification:

360126, 360123

Abstract:

The electroplated components of a magnetic head of the present invention are fabricated utilizing a seed layer that is susceptible to reactive ion etch removal techniques. A preferred seed layer is comprised of tungsten or titanium. Following the electroplating of the components utilizing a fluorine species reactive ion etch process the seed layer is removed, and significantly, the fluorine RIE process creates a gaseous tungsten or titanium fluoride compound removal product. The problem of seed layer redeposition along the sides of the electroplated components is overcome because the gaseous fluoride compound is not redeposited. The present invention also includes an enhanced two part seed layer, where the lower part is tungsten, titanium or tantalum and the upper part is composed of the material that constitutes the component to be electroplated.

US Patent:

6744607, Jun 1, 2004

Filed:

Mar 21, 2002

Appl. No.:

10/104457

Inventors:

James Mac Freitag - San Jose CA
Mustafa Pinarbasi - Morgan Hill CA
Patrick Rush Webb - San Jose CA

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

G11B 539

US Classification:

360322

Abstract:

A spin valve sensor includes an antiparallel (AP) pinned layer structure which is self-pinned without the assistance of an antiferromagnetic (AFM) pinning layer. A free layer of the spin valve sensor has first and second wing portions which extend laterally beyond a track width of the spin valve sensor and are exchange coupled to first and second AFM pinning layers. Magnetic moments of the wing portions of the free layer are pinned parallel to the ABS and parallel to major planes of the layers of the sensor for magnetically stabilizing the central portion of the free layer which is located within the track width. The spin valve sensor has a central portion that extends between the first and second AFM layers. First and second lead layers overlay the first and second AFM layers and further overlay first and second portions of the central portion so that a distance between the first and second lead layers defines a track width that is less than a distance between the first and second AFM layers. The spin valve sensor has a cap layer structure that has a full thickness portion which is located between first and second reduced thickness portions and the first and second lead layers engage the cap layer structure within the first and second reduced thickness portions.

US Patent:

6785101, Aug 31, 2004

Filed:

Jul 12, 2001

Appl. No.:

09/905522

Inventors:

Patrick Rush Webb - San Jose CA
Mustafa Pinarbasi - Morgan Hill CA
Richard Hsiao - San Jose CA
Hardayal Singh Gill - Palo Alto CA

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

G11B 533

US Classification:

3603241

Abstract:

The first and second side surfaces of either a bottom spin valve sensor or a top spin valve sensor are notched so as to enable a reduction in the magnetoresistive coefficient of side portions of the sensor beyond the track width region thereby minimizing side reading by the sensor. The first and second notches of the spin valve sensor are then filled with layers in various embodiments of the invention to complete the spin valve sensor.

US Patent:

6804879, Oct 19, 2004

Filed:

Oct 23, 2002

Appl. No.:

10/279169

Inventors:

Richard D. Hsiao - San Jose CA
Quang Le - San Jose CA
Edward Hin Pong Lee - San Jose CA
Paul Phong Nguyen - San Jose CA
Son Van Nguyen - Los Gatos CA
Denny D. Tang - Saratoga CA
Bradley Douglas Webb - San Jose CA
Patrick Rush Webb - San Jose CA
Samuel Wei-san Yuan - Saratoga CA

Assignee:

Hitachi Global Storage Technologies Netherlands, B.V. - Amsterdam

International Classification:

G11B 5127

US Classification:

2960324, 2960323, 2960325, 2960316, 2960318, 216 22, 216 47, 216 48, 216 87, 360119, 360122, 360123

Abstract:

A method for producing a magnetic transducer with a inductive write head having a multilayer coil with a high aspect ratio and a short yoke is provided. A damascene process is used for two coil layers and a conventional process for the third coil layer. The process of the invention allows a seed layer for the coil to be deposited on the side walls of the trenches for the first and second coil layers. In one embodiment the seed layer for the coil is preceded by an adhesion layer.

US Patent:

6859998, Mar 1, 2005

Filed:

Apr 12, 2002

Appl. No.:

10/121989

Inventors:

James Kruger - Half Moon Bay CA, US
Benjamin L. Wang - San Jose CA, US
Patrick R. Webb - San Jose CA, US
Howard G. Zolla - San Jose CA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G11B005/187
B44C001/22
C23C014/04

US Classification:

2960313, 2960312, 2960315, 2960318, 29DIG 16, 216 11, 216 22, 216 47, 2041921, 20419211, 430315, 430320, 360122, 360125

Abstract:

An article is formed as a substrate having a projection extending outwardly therefrom. The article may be a magnetic recording head and the projection a write pole. The projection has a width in a thinnest dimension measured parallel to a substrate surface of no more than about 0. 3 micrometers and a height measured perpendicular to the substrate of not less than about 5 times the width. The article is fabricated by forming an overlying structure on the substrate with an edge thereon, depositing a replication layer lying on the edge, depositing a filler onto the edge and the substrate, so that the filler, the replication layer, and the overlying structure in combination comprise a continuous layer on the substrate, selectively removing at least a portion of the replication layer from a free surface of the continuous layer inwardly toward the substrate, to form a defined cavity, and depositing a projection material into the defined cavity to form the projection.

US Patent:

6862798, Mar 8, 2005

Filed:

Jan 18, 2002

Appl. No.:

10/054621

Inventors:

James Bernard Kruger - Half Moon Bay CA, US
Benjamin Lu chen Wang - San Jose CA, US
Patrick Rush Webb - San Jose CA, US
Howard Gordon Zolla - San Jose CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

G11B005/127
H04R031/00

US Classification:

2960313, 2960307, 2960315, 2960316, 2960318, 20419215, 205119, 205122, 216 39, 216 41, 306122, 306126, 306317, 427127, 427128

Abstract:

A method of making a magnetic head assembly wherein the magnetic head assembly has a write head with a pole tip includes the steps of forming a shaping layer on an underlying layer wherein the shaping layer has a side surface and a top surface, ion beam sputter depositing a ferromagnetic material layer on the underlying layer and on the side and top surfaces of the shaping layer and removing first and second portions of the ferromagnetic material layer from the underlying layer and the top surface of the shaping layer, respectively, leaving a remaining portion of the ferromagnetic material layer on the side surface of the shaping layer which is the aforementioned pole tip.

US Patent:

6878240, Apr 12, 2005

Filed:

Jun 28, 2002

Appl. No.:

10/186470

Inventors:

Raymond Bus-Kwofie - Santa Clara CA, US
James Mac Freitag - San Jose CA, US
Lichiao Metin - San Jose CA, US
Mustafa Pinarbasi - Morgan Hill CA, US
Patrick Rush Webb - San Jose CA, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C23C014/34

US Classification:

20419211, 20429804, 20429815, 427131

Abstract:

A sputtering system is provided with a substrate and a sputtering material layer that are located in a sputtering chamber. The sputtering material layer has a sputtering surface where atoms of the material are sputtered and the substrate has a forming surface with a site where atoms of the sputtered material are to be formed. The sputtering material layer has a sputtering center which is located at a center of the atoms to be sputtered and the aforementioned site has a periphery with a forming center at a center of the periphery. The sputtering center is offset from the forming center so that shadowing at outer extremities of photoresist masks near the periphery of the substrate is minimized.