Patty Y Tsai

US Patent:

53544170, Oct 11, 1994

Filed:

Oct 13, 1993

Appl. No.:

8/135715

Inventors:

Ernest L. Cheung - Cupertino CA
Patty H. Tsai - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21306
B44C 122

US Classification:

156643

Abstract:

A process for selectively etching a substrate 20 having a molybdenum silicide layer 25 with a resist material 26 on portions of the molybdenum silicide layer 25 is described. The substrate 26 is placed into an etch zone 54 and the process gas comprising SF. sub. 6 and HBr is introduced into the etch zone 54. Preferably, the volumetric flow ratio of SF. sub. 6 :HBr is from about 1:10 to about 1:1, and more preferably, an oxygen containing gas such as O. sub. 2 is added to the process gas. A plasma is generated in the etch zone 54 to form an etch gas from the process gas that anisotropically etches the MoSi. sub. x layer 25 with good selectivity and reduced profile microloading.

US Patent:

58638393, Jan 26, 1999

Filed:

Jun 27, 1997

Appl. No.:

8/883760

Inventors:

Dale A. Olson - Sunnyvale CA
Xue-Yu Qian - Milpitas CA
Patty Hui-ing Tsai - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21311

US Classification:

438695

Abstract:

During the etching of a silicon-containing material using a halogen-containing etch gas, a silicon-hydride gas is added to the etch gas to provide increased sidewall protection during the etch. Suitably up to about 50 percent by volume of a silicon-containing gas such as silane is added to improve anisotropy of the etch and to prevent notching at the silicon-substrate interface.

US Patent:

57054339, Jan 6, 1998

Filed:

Aug 24, 1995

Appl. No.:

8/518937

Inventors:

Dale A. Olson - Sunnyvale CA
Xue-Yu Qian - Milpitas CA
Patty Hui-ing Tsai - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21469

US Classification:

437233

Abstract:

During the etching of a silicon-containing material using a halogen-containing etch gas, a silicon-hydride gas is added to the etch gas to provide increased sidewall protection during the etch. Suitably up to about 50 percent by volume of a silicon-containing gas such as silane is added to improve anisotropy of the etch and to prevent notching at the silicon-substrate interface.