Paul C Jamison

US Patent:

6573197, Jun 3, 2003

Filed:

Apr 12, 2001

Appl. No.:

09/833550

Inventors:

Alessandro C. Callegari - Yorktown Heights NY
Evgeni Gousev - Mahopac NY
Michael A. Gribelyuk - Poughquag NY
Paul C. Jamison - Hopewell Junction NY
Dianne L. Lacey - Mahopac NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2131

US Classification:

438791, 438200, 438592, 438287, 438778, 438488, 438591, 257411, 257406, 257349, 257649

Abstract:

The present invention provides a method of fabricating a thermally stable polysilicon/high-k dielectric film stack utilizing a deposition method wherein Si-containing precursor gas which includes silicon and hydrogen is diluted with an inert gas such as He so as to significantly reduce the hydrogen content in the resultant polysilicon film. Semiconductor structures such as field effect transistors (FETs) and capacitors which include at least the thermally stable polysilicon/high-k dielectric film stack are also provided herein.

US Patent:

6893979, May 17, 2005

Filed:

Mar 15, 2001

Appl. No.:

09/809663

Inventors:

Mukesh V. Khare - White Plains NY, US
Christopher P. D'Emic - Ossining NY, US
Thomas T. Hwang - Wappingers Falls NY, US
Paul C. Jamison - Hopewell Junction NY, US
James J. Quinlivan - Essex Junction VT, US
Beth A. Ward - Essex Junction VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L021/31
H01L021/469

US Classification:

438769, 438775, 438786

Abstract:

A method for forming a gate dielectric for an integrated circuit device. In an exemplary embodiment of the invention, the method includes forming an initial oxynitride layer upon a substrate material, the oxynitride layer having an initial physical thickness. The initial oxynitride layer is then subjected to a plasma nitridation, the plasma nitridation resulting in final oxynitride layer having a final physical thickness.

US Patent:

6921711, Jul 26, 2005

Filed:

Sep 9, 2003

Appl. No.:

10/605106

Inventors:

Cyril Cabral, Jr. - Ossining NY, US
Paul C. Jamison - Hopewell Junction NY, US
Victor Ku - Yorktown Heights NY, US
Ying Li - Poughkeepsie NY, US
Vijay Narayanan - New York NY, US
An L Steegen - Stamford CT, US
Yun-Yu Wang - Poughquag NY, US
Kwong H. Wong - Wappingers Falls NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L021/443

US Classification:

438589, 438592, 438595

Abstract:

A structure and method for a metal replacement gate of a high performance device is provided. A sacrificial gate structure is first formed on an etch stop layer provided on a semiconductor substrate. A pair of spacers is provided on sidewalls of the sacrificial gate structure. The sacrificial gate structure is then removed, forming an opening. Subsequently, a metal gate including an first layer of metal such as tungsten, a diffusion barrier such as titanium nitride, and a second layer of metal such as tungsten is formed in the opening between the spacers.

US Patent:

6982230, Jan 3, 2006

Filed:

Nov 8, 2002

Appl. No.:

10/291334

Inventors:

Cyril Cabral, Jr. - Ossining NY, US
Alessandro C. Callegari - Yorktown Heights NY, US
Michael A. Gribelyuk - Poughquag NY, US
Paul C. Jamison - Hopewell Junction NY, US
Dianne L. Lacey - Mahopac NY, US
Fenton R. McFeely - Ossining NY, US
Vijay Narayanan - New York NY, US
Deborah A. Neumayer - Danbury CT, US
Pushkar Ranade - Hillsboro OR, US
Sufi Zafar - Briarcliff Manor NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/31

US Classification:

438778, 438785, 438198, 438199, 438238

Abstract:

A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid; vaporizing at least the alkoxide and depositing the vaporized component at a temperature of greater than 400 C. The resultant film is dense, microcrystalline and is capable of self-passivation when treated in a hydrogen plasma or forming gas anneal.

US Patent:

7109559, Sep 19, 2006

Filed:

Nov 5, 2004

Appl. No.:

10/982999

Inventors:

Mukesh V. Khare - White Plains NY, US
Christopher P. D'Emic - Ossining NY, US
Thomas T. Hwang - Wappingers Falls NY, US
Paul C. Jamison - Hopewell Junction NY, US
James J. Quinlivan - Essex Junction VT, US
Beth A. Ward - Essex Junction VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/76
H01L 29/94

US Classification:

257411, 257649

Abstract:

A method for forming a gate dielectric for an integrated circuit device. In an exemplary embodiment of the invention, the method includes forming an initial oxynitride layer upon a substrate material, the oxynitride layer having an initial physical thickness. The initial oxynitride layer is then subjected to a plasma nitridation, the plasma nitridation resulting in final oxynitride layer having a final physical thickness.

US Patent:

7115959, Oct 3, 2006

Filed:

Jun 22, 2004

Appl. No.:

10/873733

Inventors:

Wanda Andreoni - Adliswil, CH
Alessandro C. Callegari - Yorktown Heights NY, US
Eduard A. Cartier - New York NY, US
Alessandro Curioni - Gattikon, CH
Christopher P. D'Emic - Ossining NY, US
Evengi Gousev - Mahopag NY, US
Michael A. Gribelyuk - Hopewell Junction NY, US
Paul C. Jamison - Hopewell Junction NY, US
Rajarao Jammy - Hopewell Junction NY, US
Dianne L. Lacey - Mahopac NY, US
Fenton R. McFeely - Ossining NY, US
Vijay Narayanan - New York NY, US
Carlo A. Pignedoli - Adliswil, CH
Sufi Zafar - Briarcliff Manor NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/76
H01L 29/94
H01L 31/062
H01L 31/113
H01L 31/119

US Classification:

257410, 257E29128

Abstract:

The present invention provides a gate stack structure that has high mobilites and low interfacial charges as well as semiconductor devices, i. e. , metal oxide semiconductor field effect transistors (MOSFETs) that include the same. In the semiconductor devices, the gate stack structure of the present invention is located between the substrate and an overlaying gate conductor. The present invention also provides a method of fabricating the inventive gate stack structure in which a high temperature annealing process (on the order of about 800 C. ) is employed. The high temperature anneal used in the present invention provides a gate stack structure that has an interface state density, as measured by charge pumping, of about 8×10charges/cmor less, a peak mobility of about 250 cm/V-s or greater and substantially no mobility degradation at about 6. 0×10inversion charges/cmor greater.

US Patent:

7566938, Jul 28, 2009

Filed:

Nov 17, 2005

Appl. No.:

11/281032

Inventors:

Cyril Cabral, Jr. - Ossining NY, US
Alessandro C. Callegari - Yorktown Heights NY, US
Michael A. Gribelyuk - Poughquag NY, US
Paul C. Jamison - Hopewell Junction NY, US
Dianne L. Lacey - Mahopac NY, US
Fenton R. McFeely - Ossining NY, US
Vijay Narayanan - New York NY, US
Deborah A. Neumayer - Danbury CT, US
Pushkar Ranade - Hillsboro OR, US
Sufi Zafar - Briarcliff Manor NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/76

US Classification:

257411, 257310, 257E29164

Abstract:

A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid; vaporizing at least the alkoxide and depositing the vaporized component at a temperature of greater than 400 C. The resultant film is dense, microcrystalline and is capable of self-passivation when treated in a hydrogen plasma or forming gas anneal.

US Patent:

7655994, Feb 2, 2010

Filed:

Oct 26, 2005

Appl. No.:

11/259644

Inventors:

Eduard A. Cartier - New York NY, US
Mathew W. Copel - Yorktown Heights NY, US
Martin M. Frank - Bronx NY, US
Evgeni P. Gousev - Saratoga CA, US
Paul C. Jamison - Hopewell Junction NY, US
Rajarao Jammy - Austin TX, US
Barry P. Linder - Hastings-on-Hudson NY, US
Vijay Narayanan - New York NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/94
H01L 21/326

US Classification:

257411

Abstract:

A semiconductor structure, particularly a pFET, which includes a dielectric material that has a dielectric constant of greater than that of SiOand a Ge or Si content of greater than 50% and at least one other means for threshold/flatband voltage tuning by material stack engineering is provided. The other means contemplated in the present invention include, for example, utilizing an insulating interlayer atop the dielectric for charge fixing and/or by forming an engineered channel region. The present invention also relates to a method of fabricating such a CMOS structure.