Paul T Jamison

US Patent:

6891231, May 10, 2005

Filed:

Jun 13, 2001

Appl. No.:

09/879105

Inventors:

Kevin Kok Chan - Staten Island NY, US
Christopher Peter D'Emic - Ossining NY, US
Evgeni Gousev - Mahopac NY, US
Supratik Guha - Chappaqua NY, US
Paul C. Jamison - Hopewell Junction NY, US
Lars-Ake Ragnarsson - New York NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L029/76
H01L029/94
H01L031/062
H01L031/113
H01L031/119

US Classification:

257368, 257412, 257310

Abstract:

A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and is disposed under the gate electrode. The insulating material can be provided either as a layer or distributed within a gate dielectric material disposed under the gate electrode.

US Patent:

7169674, Jan 30, 2007

Filed:

Feb 28, 2005

Appl. No.:

11/066762

Inventors:

Kevin Kok Chan - Staten Island NY, US
Christopher Peter D'Emic - Ossining NY, US
Evgeni Gousev - Mahopac NY, US
Supratik Guha - Chappaqua NY, US
Paul C. Jamison - Hopewell Junction NY, US
Lars-Ake Ragnarsson - New York NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/8236
H01L 21/8222
H01L 21/335
H01L 21/8234
H01L 21/336
H01L 21/331

US Classification:

438300, 438301, 438302, 438303, 438304, 438305, 438142, 438198, 438216, 438287, 438310, 438368, 438371, 438373, 438374, 438372, 257E21051

Abstract:

A diffusion barrier (and method for forming the diffusion barrier) for a field-effect transistor having a channel region and a gate electrode, includes an insulating material being disposed over the channel region. The insulating material includes nitrogen (N), and is disposed under the gate electrode. The insulating material can be provided either as a layer or distributed within a gate dielectric material disposed under the gate electrode.

US Patent:

D584963, Jan 20, 2009

Filed:

May 22, 2007

Appl. No.:

29/280270

Inventors:

Paul Jamison - Matthews NC, US
Daniel Lee Bizzell - Davidson NC, US

Assignee:

Yo! Brands, LLC - Charlotte NC

International Classification:

0905

US Classification:

D 9696

US Patent:

7655994, Feb 2, 2010

Filed:

Oct 26, 2005

Appl. No.:

11/259644

Inventors:

Eduard A. Cartier - New York NY, US
Mathew W. Copel - Yorktown Heights NY, US
Martin M. Frank - Bronx NY, US
Evgeni P. Gousev - Saratoga CA, US
Paul C. Jamison - Hopewell Junction NY, US
Rajarao Jammy - Austin TX, US
Barry P. Linder - Hastings-on-Hudson NY, US
Vijay Narayanan - New York NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/94
H01L 21/326

US Classification:

257411

Abstract:

A semiconductor structure, particularly a pFET, which includes a dielectric material that has a dielectric constant of greater than that of SiOand a Ge or Si content of greater than 50% and at least one other means for threshold/flatband voltage tuning by material stack engineering is provided. The other means contemplated in the present invention include, for example, utilizing an insulating interlayer atop the dielectric for charge fixing and/or by forming an engineered channel region. The present invention also relates to a method of fabricating such a CMOS structure.

US Patent:

7858500, Dec 28, 2010

Filed:

Apr 4, 2008

Appl. No.:

12/062972

Inventors:

Eduard A. Cartier - New York NY, US
Matthew W. Copel - Yorktown Heights NY, US
Martin M. Frank - Bronx NY, US
Evgeni P. Gousev - Saratoga CA, US
Paul C. Jamison - Hopewell Junction NY, US
Rajarao Jammy - Austin TX, US
Barry P. Linder - Hastings-on-Hudson NY, US
Vijay Narayanan - New York NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/479

US Classification:

438466

Abstract:

A semiconductor structure, particularly a pFET, which includes a dielectric material that has a dielectric constant of greater than that of SiOand a Ge or Si content of greater than 50% and at least one other means for threshold/flatband voltage tuning by material stack engineering is provided. The other means contemplated in the present invention include, for example, utilizing an insulating interlayer atop the dielectric for charge fixing and/or by forming an engineered channel region. The present invention also relates to a method of fabricating such a CMOS structure.

US Patent:

20050104142, May 19, 2005

Filed:

Nov 13, 2003

Appl. No.:

10/712575

Inventors:

Vijav Narayanan - New York NY, US
Fenton McFeely - Ossining NY, US
Keith Milkove - Beacon NY, US
John Yurkas - Stamford CT, US
Matthew Copel - Yorktown Heights NY, US
Paul Jamison - Hopewell Junction NY, US
Roy Carruthers - Stormville NY, US
Cyril Cabral - Ossining NY, US
Edmund Sikorskii - Florida NY, US
Elizabeth Duch - North Salem NY, US
Alessandro Callegari - Yorktown Heights NY, US
Sufi Zafar - Briarcliff Manor NY, US
Kazuhito Nakamura - Nagoya-shi, JP

International Classification:

H01L029/76

US Classification:

257412000, 438582000

Abstract:

Compounds of Ta and N, potentially including further elements, and with a resistivity below about 20 mΩcm and with the elemental ratio of N to Ta greater than about 0.9 are disclosed for use as gate materials in field effect devices. A representative embodiment of such compounds, TaSiN, is stable at typical CMOS processing temperatures on SiOcontaining dielectric layers and high-k dielectric layers, with a workfunction close to that of n-type Si. Metallic Ta—N compounds are deposited by a chemical vapor deposition method using an alkylimidotris(dialkylamido)Ta species, such as tertiaryamylimidotris(dimethylamido)Ta (TAIMATA), as Ta precursor. The deposition is conformal allowing for flexible introduction of the Ta—N metallic compounds into a CMOS processing flow. Devices processed with TaN or TaSiN show near ideal characteristics.

US Patent:

20050250318, Nov 10, 2005

Filed:

Jul 13, 2005

Appl. No.:

11/180384

Inventors:

Vijay Narayanan - New York NY, US
Fenton McFeely - Ossining NY, US
Keith Milkove - Beacon NY, US
John Yurkas - Stamford CT, US
Matthew Copel - Yorktown Heights NY, US
Paul Jamison - Hopewell Junction NY, US
Roy Carruthers - Stormville NY, US
Cyril Cabral - Ossining NY, US
Edmund Sikorskii - Florida NY, US
Elizabeth Duch - North Salem NY, US
Alessandro Callegari - Yorktown Heights NY, US
Sufi Zafar - Briarcliff Manor NY, US
Kazuhito Nakamura - Nagoya-shi, JP

International Classification:

H01L021/3205
H01L021/4763
H01L021/44
H01L021/31
H01L021/469

US Classification:

438654000, 438785000

Abstract:

Compounds of Ta and N, potentially including further elements, and with a resistivity below about 20 mΩcm and with the elemental ratio of N to Ta greater than about 0.9 are disclosed for use as gate materials in field effect devices. A representative embodiment of such compounds, TaSiN, is stable at typical CMOS processing temperatures on SiOcontaining dielectric layers and high-k dielectric layers, with a workfunction close to that of n-type Si. Metallic Ta—N compounds are deposited by a chemical vapor deposition method using an alkylimidotris(dialkylamido)Ta species, such as tertiaryamylimidotris(dimethylamido)Ta (TAIMATA), as Ta precursor. The deposition is conformal allowing for flexible introduction of the Ta—N metallic compounds into a CMOS processing flow. Devices processed with TaN or TaSiN show near ideal characteristics.

US Patent:

20080099351, May 1, 2008

Filed:

May 22, 2007

Appl. No.:

11/752270

Inventors:

Paul Jamison - Matthews NC, US
Daniel Lee Bizzell - Davidson NC, US

Assignee:

YO! BRANDS, LLC - Charlotte NC

International Classification:

B65D 77/06

US Classification:

206217

Abstract:

A liquid dispenser comprises a body defining an interior containment space for containing a liquid to be dispensed and a structure configured to mount the liquid dispenser onto a drinking container. The structure comprises an elongate opening formed in the body of the liquid dispenser that generally divides the liquid dispenser into two portions. Approximately half of the volume of the interior containment space is located in the first portion of the body of the liquid dispenser. Alternatively, substantially all of the volume of the interior containment space is located in the first portion.