Paul Leroy Larson

US Patent:

6800852, Oct 5, 2004

Filed:

Dec 27, 2002

Appl. No.:

10/330383

Inventors:

Paul E. Larson - Bloomington MN
David G. Watson - Eden Prairie MN
John F. Moulder - Bloomington MN

Assignee:

ReVera Incorporated - Sunnyvale CA

International Classification:

G01N 2300

US Classification:

250305, 438 50

Abstract:

The present invention provides for characterization of a film (e. g. , thickness determination for a silicon oxynitride film) using a comparison process (e. g. , a fitting process) to compare measured peak shapes for elemental and/or chemical species (e. g. , Si peak shapes previously measured for a particular process to be monitored) to collected spectral data (e. g. , using a non-linear least squares fitting algorithm).

US Patent:

6891158, May 10, 2005

Filed:

Dec 27, 2002

Appl. No.:

10/330317

Inventors:

Paul E. Larson - Bloomington MN, US
David G. Watson - Eden Prairie MN, US

Assignee:

ReVera Incorporated - Sunnyvale CA

International Classification:

G01B015/02

US Classification:

250305, 250307, 250306, 378 50

Abstract:

The present invention provides for characterization of a film (e. g. , thickness determination for a silicon oxynitride film) using collected spectral data. For example, an acquired spectrum may be cumulatively integrated and the geometric properties of the integrated spectrum may be used to determine component concentration information. Thickness measurements for the film may be provided based on the component concentration information.

US Patent:

7449682, Nov 11, 2008

Filed:

Oct 24, 2002

Appl. No.:

10/493492

Inventors:

Paul E. Larson - Bloomington MN, US
John F. Moulder - Bloomington MN, US
David G. Watson - Eden Prairie MN, US
David S. Perloff - Los Altos Hills CA, US

Assignee:

Revera Incorporated - Sunnyvale CA

International Classification:

H01J 49/00

US Classification:

250281, 250309, 378 45

Abstract:

Characterization of a sample, e. g. , a depth profile, may be attained using one or more of the following parameters in an electron spectroscopy method or system. The one or more parameters may include using low ion energy ions for removing material from the sample to expose progressively deeper layers of the sample, using an ion beam having a low ion angle to perform such removal of sample material, and/or using an analyzer positioned at a high analyzer angle for receiving photoelectrons escaping from the sample as a result of x-rays irradiating the sample. Further, a correction algorithm may be used to determine the concentration of components (e. g. , elements and/or chemical species) versus depth within the sample, e. g. , thin film formed on a substrate. Such concentration determination may include calculating the concentration of components (e.

US Patent:

8071942, Dec 6, 2011

Filed:

Feb 12, 2010

Appl. No.:

12/705261

Inventors:

David G. Watson - Eden Prairie MN, US
Paul E. Larson - Bloomington MN, US
Dennis F. Paul - Eden Prairie MN, US
Ronald E. Negri - Minnetonka MN, US

Assignee:

Physical Electronics USA, Inc. - Chanhassen MN

International Classification:

H01J 49/44
H01J 49/06
G21K 1/00

US Classification:

250305, 250310, 250396 R, 2505051, 25044011, 7386491

Abstract:

A sample holder apparatus and method for reducing the energy of charged particles entering an annular-acceptance analyzer includes use of an electrically isolated sample support member having a sample receiving surface configured to receive a sample and electrically connect the sample to the sample support member (e. g. , wherein the sample support member is configured for application of a retarding bias potential). A grounded sample aperture member defining an aperture relative to the sample support member but electrically isolated therefrom is provided such that the aperture is proximate the sample receiving surface to expose at least a portion of a surface of a sample received thereon to be analyzed (e. g. , wherein applying a retarding bias potential to the sample support member produces an electrical retarding field about the aperture that reduces the energy of emitted particles from a sample before they enter an annular-acceptance analyzer).

US Patent:

20030080291, May 1, 2003

Filed:

Oct 26, 2001

Appl. No.:

10/003224

Inventors:

Paul Larson - Bloomington MN, US
John Moulder - Bloomington MN, US
David Watson - Eden Prairie MN, US
David Perloff - Los Altos Hills CA, US

Assignee:

Physical Electronics, Inc. - Eden Prairie MN

International Classification:

G01N023/227

US Classification:

250/306000, 250/307000

Abstract:

Characterization of a sample, e.g., determination of a component's concentration in a thin film, may be attained by providing calibration information representative of surface spectrum measurements for a plurality of samples correlated with depth profile information for the plurality of samples. The plurality of samples are formed under a same set of process conditions. One or more surface spectrum measurements are provided for a sample to be characterized that also was formed under the same set of process conditions. At least one characteristic of the sample to be characterized (e.g., concentration of a component) is determined based on the one or more surface spectrum measurements for the sample to be characterized and the calibration information.

US Patent:

20030080292, May 1, 2003

Filed:

Oct 26, 2001

Appl. No.:

10/075571

Inventors:

David Watson - Eden Prairie MN, US
Paul Larson - Bloomington MN, US

Assignee:

Physical Electronics, Inc. - Eden Prairie MN

International Classification:

G01N023/227

US Classification:

250/306000, 250/307000

Abstract:

Characterization of a sample, e.g., a depth profile, may be attained using one or more of the following parameters in an electron spectroscopy method or system. The one or more parameters may include using low ion energy ions for removing material from the sample to expose progressively deeper layers of the sample, using an ion beam having a low ion angle to perform such removal of sample material, and/or using an analyzer positioned at a high analyzer angle for receiving photoelectrons escaping from the sample as a result of x-rays irradiating the sample. Further, a correction algorithm may be used to determine the concentration of components (e.g., elements and/or chemical species) versus depth within the sample, e.g., thin film formed on a substrate. Such concentration determination may include calculating the concentration of components (e.g, elements and/or chemical species) at each depth of a depth profile by removing from depth profile data collected at a particular depth (i.e., the depth for which concentration is to be calculated) concentration contributions attributable to deeper depths of the sample.

US Patent:

51189410, Jun 2, 1992

Filed:

Apr 23, 1991

Appl. No.:

7/690870

Inventors:

Paul E. Larson - Bloomington MN

Assignee:

The Perkin-Elmer Corporation - Norwalk CT

International Classification:

H01J 37256

US Classification:

250310

Abstract:

Target area on a specimen surface is located in an electron microanalyzer system that includes an electron energy analyzer and an analyzer detector. An electron gun impinges a rastering beam of incident electrons across the surface, a secondary electron detector provides corresponding signals for producing a scanning electron microscope image of the surface. Backscattered electrons effected from the incident electrons are passed through the analyzer for producing a further image that is superimposed on the SEM image to locate the target area to be subject to a separate microanalysis. Particularly for an electrically insulating specimen surface, the images are produced in a single frame of rastering, and surface area and beam current are sufficient to produce the images without substantial charge buildup.

US Patent:

59904763, Nov 23, 1999

Filed:

Nov 12, 1997

Appl. No.:

8/968454

Inventors:

Paul E. Larson - Bloomington MN
Michael A. Kelly - Portola Valley CA

Assignee:

Physical Electronics Inc - Eden Prairie MN

International Classification:

H05H 300
H01J 3726

US Classification:

250251

Abstract:

An apparatus effects a uniform surface potential on an insulating specimen in an x-ray photoelectron or a secondary ion emission instrument in which there is positive charging of an irradiation region. An area of the specimen including the irradiation region is flooded with a beam of low energy electrons to neutralize the positive charging, causing negative charging of the flooding area. Positive ions are directed onto the flooding area to neutralize the negative charging. The electron beam has an energy less than about 2 eV and an energy spread less than about 0. 5 eV. The ratio of the beam distance to its diameter is less than about 10. The ions have an energy less than 10 eV.

Address:

9851 Dakota Rd, Minneapolis, MN 55438

VIN:

JHMGD38617S018033

Make:

HONDA

Model:

FIT

Year:

2007

Address:

14300 Garrett Ave, Saint Paul, MN 55124

Phone:

9524312019

VIN:

1FTPX14V77FB01761

Make:

FORD

Model:

F-150

Year:

2007