Paul L Rodriguez

US Patent:

6355973, Mar 12, 2002

Filed:

Jun 7, 1995

Appl. No.:

08/485199

Inventors:

Kendall Scott Wills - Houston TX
Paul Anthony Rodriguez - Lewisville TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 23538

US Classification:

257620, 257729, 257730

Abstract:

A semiconductor die is enveloped by an ambient gas that will react to the presence of a particular wave length of light. A laser beam is focused on the edge of the die to deposit a dielectric coating. The laser beam or the die is rotated until the dielectric coating covers the entire die edge. The dielectric coating acts as a seal that is impervious to water and other contamination that can reduce the die reliability. The dielectric coating also electrically insulates the die from its surroundings.

US Patent:

51194511, Jun 2, 1992

Filed:

Dec 31, 1990

Appl. No.:

7/636315

Inventors:

Kendall S. Wills - Houston TX
Paul A. Rodriguez - Lewisville TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

G02B 612
B32B 3100
H01J 516

US Classification:

385 14

Abstract:

Optical waveguides are used to bridge between integrated circuits on different die. The waveguide is suspended on polyamid or some other material. An optional waveguide is built which can have both active components or passive components and beam dumps. The optical waveguides allow the signal from one integrated circuit to another to travel at the speed of light. Such waveguides can be direct deposited to better than 0. 2 micron accuracy to connect submicron waveguides on the integrated circuit. The use of conductive waveguides or conductive coatings to encapsulate the waveguide allows electrical signals to be passed along with the optical signal.

US Patent:

46234039, Nov 18, 1986

Filed:

Jun 15, 1984

Appl. No.:

6/621280

Inventors:

Kendall S. Wills - Houston TX
Paul A. Rodriguez - Houston TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

G01B 902
G01B 1102

US Classification:

148 333

Abstract:

A target for a laser beam consists of a plurality of closely spaced lines that causes the generation of an readily-identifiable read-out so that the laser beam can be indexed when performing laser scribing for redundant memory devices or the like.

US Patent:

58474676, Dec 8, 1998

Filed:

Jul 27, 1993

Appl. No.:

8/098008

Inventors:

Kendall Scott Wills - Houston TX
Paul Anthony Rodriguez - Lewisville TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2329

US Classification:

257789

Abstract:

A device or die is presented which uses laser deposited leads, with a filler to bridge the gap between the die and the lead frame. The filler may be oxide, poly amide, a combination of oxide layers and poly amide layers, plastic or a plastic which has plastic coated beads of metal. The die and lead frame are placed on a heat spreader. Leads are formed over the filler material from bond pads on the lead frame to bond pads on the die. Various protective materials are placed over the die to protect it from the package. Over the protective material is another heat spreader or other device that is required to make the die function better. Typical devices are batteries, capacitors, or other die. Finally, the structure is encapsulated in a package of non-conductive material. This structure is more stable than presently available structures because the active element, the die, is not in direct contact with the plastic package.

US Patent:

50087290, Apr 16, 1991

Filed:

Sep 28, 1989

Appl. No.:

3/015445

Inventors:

Kendall S. Wills - Houston TX
Paul A. Rodriguez - Houston TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2702

US Classification:

357 51

Abstract:

A semiconductor device is programmed by a laser beam which causes a PN junction in a silicon substrate to be permanently altered. This produces a leakage path between a program node and a tank region in the substrate; the program node can be an input to a transistor in a CMOS circuit, for example, so this node will always hold the transistor on or off depending whether or not it has been laser-programmed. Preferably, the tank region is of opposite type compared to the substrate, so the program node is electrically isolated from the substrate in either case.

US Patent:

56058632, Feb 25, 1997

Filed:

Jun 7, 1995

Appl. No.:

8/472103

Inventors:

Kendall S. Wills - Houston TX
Paul A. Rodriguez - Lewisville TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21283
H01L 2156
H01L 2160

US Classification:

437182

Abstract:

A process for manufacturing device or die is presented which uses laser deposited leads, with a filler to bridge the gap between the die and the lead frame. The filler may be oxide, poly amide, a combination of oxide layers and poly amide layers, plastic or a plastic which has plastic coated beads of metal. The die and lead frame are placed on a heat spreader. Leads are formed over the filler material from bond pads on the lead frame to bond pads on the die. Various protective materials are placed over the die to protect it from the package. Over the protective material is another heat spreader or other device that is required to make the die function better. Typical devices are batteries, capacitors, or other die. Finally, the structure is encapsulated in a package of non-conductive material.

US Patent:

59602635, Sep 28, 1999

Filed:

Jun 2, 1993

Appl. No.:

8/070487

Inventors:

Kendall Scott Wills - Houston TX
Paul A. Rodriguez - Lewisville TX

Assignee:

Texas Instruments Incorporated

International Classification:

H01L 21268

US Classification:

438131

Abstract:

A CMOS semiconductor device is programmed by a laser beam which causes a PN junction in a silicon substrate to be permanently altered. This produces a leakage path between a program node and a tank region in the substrate; the program node can be an input to a transistor in a CMOS circuit, for example, so this node will always hold the transistor on or off depending whether or not it has been laser-programmed. Preferably, the tank region is of opposite type compared to the substrate, so the program node is electrically isolated from the substrate in either case.

US Patent:

62815636, Aug 28, 2001

Filed:

Apr 30, 1997

Appl. No.:

8/846949

Inventors:

Kendall Scott Wills - Houston TX
Paul A. Rodriguez - Lewisville TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2900

US Classification:

257530

Abstract:

A CMOS semiconductor device is programmed by a laser beam which causes a PN junction in a silicon substrate to be permanently altered. This produces a leakage path between a program node and a tank region in the substrate; the program node can be an input to a transistor in a CMOS circuit, for example, so this node will always hold the transistor on or off depending whether or not it has been laser-programmed. Preferably, the tank region is of opposite type compared to the substrate, so the program node is electrically isolated from the substrate in either case.