Peng Yuan Cheng

age ~51

from Milpitas, CA

Get Report

Also known as:

Peng Y Cheng
Pengyuan Y Cheng
Peng Yuan Chengpeng
Pngyuan Cheng
Yuan Cheng
Yuan Cheng Peng
Yu Chung

Connected to:

Peng Cheng Phones & Addresses

Milpitas, CA
605 Hanover Ct, Wayne, PA 19087 • 6102960903
Chesterbrook, PA
Winchester, VA
Baltimore, MD
Cherry Hill, NJ
King of Prussia, PA
Hatfield, PA
Kng Of Prussa, PA

Name / Title

Company / Classification

Phones & Addresses

Peng Cheng
Principal

Peng Cheng Trading
Whol Nondurable Goods · Gift Shops

5102 8 Ave, Brooklyn, NY 11220
5821 8 Ave, Brooklyn, NY 11220
7186337183, 7188532370

Peng Cheng

Brillance Capital Management LLC
Closed-End Investment Office

14737 Live Oak Ln, Saratoga, CA 95070
4140 Acapulco Dr, Campbell, CA 95008

Peng Cheng

Brilliance Capital Management, LLC
Financial Service · Investment Advisory

4140 Acapulco Dr, Campbell, CA 95008
14737 Live Oak Ln, Saratoga, CA 95070

Peng Cheng
Manager

Lansdowne Chinese Restaurant
Eating Place

10 N Lansdowne Ave, Fernwood, PA 19050
6102593739

Peng Cheng
Principal

Peng Cheng Trading Inc
Whol Nondurable Goods

5711 58 St, Flushing, NY 11378

Peng Cheng
Manager

Lansdowne Restaurant
Eating Place

2 N Lansdowne Ave, Fernwood, PA 19050

Resumes

Peng Cheng

view source

Location:

United States

Us Patents

Variable Tunable Range Mems Capacitor
view source
US Patent:

6355534, Mar 12, 2002
Filed:

Jan 26, 2000
Appl. No.:

09/491560
Inventors:

Peng Cheng - Campbell CA
Qing Ma - San Jose CA
Assignee:

Intel Corporation - Santa Clara CA
International Classification:

H01L 2120
US Classification:

438379, 333 24 C, 327566, 29 2542
Abstract:

The invention relates to a variable capacitor and method of making it. The variable capacitor comprises a fixed charge plate disposed in a substrate, a movable charge plate disposed above the fixed charge plate, and a stiffener affixed to the movable charge plate. The movable charge plate may be patterned to form a movable actuator plate where the fixed charge plate is elevated above a fixed actuator plate.

Micro-Electromechanical Structure Resonator, Method Of Making, And Method Of Using
view source
US Patent:

6445106, Sep 3, 2002
Filed:

Feb 18, 2000
Appl. No.:

09/507228
Inventors:

Qing Ma - San Jose CA
Peng Cheng - Campbell CA
Assignee:

Intel Corporation - Santa Clara CA
International Classification:

G11B 900
US Classification:

310309
Abstract:

The invention relates to a hollow microbeam that is fabricated upon a base or pedestal. Processing of the hollow microbeam includes forming at least one hollow channel in the microbeam by removing temporary fillers after formation of the microbeam. The inventive microbeam may provide at least an order of magnitude increase in oscillational frequency over a solid microbeam.

Micro-Electromechanical Structure Resonator, Method Of Making, And Method Of Using
view source
US Patent:

6479921, Nov 12, 2002
Filed:

Jan 9, 2002
Appl. No.:

10/046128
Inventors:

Qing Ma - San Jose CA
Peng Cheng - Campbell CA
Assignee:

Intel Corporation - Santa Clara CA
International Classification:

H02N 100
US Classification:

310309
Abstract:

The invention relates to a hollow microbeam that is fabricated upon a base or pedestal. Processing of the hollow microbeam includes forming at least one hollow channel in the microbeam by removing temporary fillers after formation of the microbeam. The inventive microbeam may provide at least an order of magnitude increase in oscillational frequency over a solid microbeam.

High Dielectric Constant Metal Oxide Gate Dielectrics
view source
US Patent:

6528856, Mar 4, 2003
Filed:

Dec 15, 1998
Appl. No.:

09/212773
Inventors:

Gang Bai - San Jose CA
David B. Fraser - Danville CA
Brian S. Doyle - Cupertino CA
Peng Cheng - Campbell CA
Chunlin Liang - San Jose CA
Assignee:

Intel Corporation - Santa Clara CA
International Classification:

H01L 2976
US Classification:

257411, 257410, 438287, 438591
Abstract:

A method of forming a dielectric layer suitable for use as the gate dielectric layer of a metal-oxide-semiconductor field effect transistor (MOSFET) includes oxidizing the surface of a silicon substrate, forming a metal layer over the oxidized surface, and reacting the metal with the oxidized surface to form a substantially intrinsic layer of silicon superjacent the substrate, wherein at least a portion of the silicon layer may be an epitaxial silicon layer, and a metal oxide layer superjacent the silicon layer. In a further aspect of the present invention, an integrated circuit includes a plurality of MOSFETs, wherein various ones of the plurality of transistors have metal oxide gate dielectric layers and substantially intrinsic silicon layers subjacent the metal oxide dielectric layers.

Fabrication Of Deep Submicron Structures And Quantum Wire Transistors Using Hard-Mask Transistor Width Definition
view source
US Patent:

6570220, May 27, 2003
Filed:

Mar 14, 2000
Appl. No.:

09/524986
Inventors:

Brian S. Doyle - Cupertino CA
Peng Cheng - Campbell CA
Assignee:

Intel Corporation - Santa Clara CA
International Classification:

H01L 2976
US Classification:

257345, 257241, 257244
Abstract:

The invention relates to a method of forming reduced feature size spacers. The method includes providing a semiconductor substrate having an area region; patterning a first spacer over a portion of the area region of the substrate, the first spacer having a first thickness and opposing side portions; patterning a pair of second spacers, each second spacer adjacent to a side portion of the first spacer, each second spacer having a second thickness in opposing side portions, wherein the second thickness is less than the first thickness; removing the first spacer; patterning a plurality of third spacers, each third spacer adjacent to one of the side portions of one of the second spacers, each one of the third spacers having a third thickness, wherein the third thickness is less than the second thickness; and removing the second spacers. The invention also relates to a field of effect transistor. The transistor includes a semiconductor substrate having a source region and a drain region; a gate area of the substrate surface; a channel region in the substrate having a cross-sectional area defined by a portion of the gate area, a channel length measured accross a portion of the channel region between the source region and the drain region; and a trench formed in a portion of the channel region, the trench having a trench length substantially equivalent to the channel length.

Resonator Frequency Correction By Modifying Support Structures
view source
US Patent:

6570468, May 27, 2003
Filed:

Jun 29, 2001
Appl. No.:

09/895360
Inventors:

Qing Ma - San Jose CA
Peng Cheng - Campbell CA
Valluri R. Rao - Saratoga CA
Assignee:

Intel Corporation - Santa Clara CA
International Classification:

H03H 905
US Classification:

333188, 333200, 73579
Abstract:

A method including to a resonator coupled to at least one support structure on a substrate, the resonator having a resonating frequency in response to a frequency stimulus, modifying the resonating frequency by modifying the at least one support structure. A method including forming a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. A method including applying a frequency stimulus to a resonator coupled to at least one support structure on a chip-level substrate determining a resonating frequency; and modifying the resonating frequency of the resonator by modifying the at least one support structure. An apparatus including a resonator coupled to at least one support structure on a chip-level substrate, the resonator having a resonating frequency tuned by the modification of the at least one support structure to a selected frequency stimulus.

Tunable Inductor Using Microelectromechanical Switches
view source
US Patent:

6573822, Jun 3, 2003
Filed:

Jun 18, 2001
Appl. No.:

09/884738
Inventors:

Qing Ma - San Jose CA
Peng Cheng - Campbell CA
Valluri Rao - Saratoga CA
Assignee:

Intel Corporation - Santa Clara CA
International Classification:

H01F 500
US Classification:

336223, 336200, 336 87, 336 73
Abstract:

A tunable inductor is disclosed. The tunable inductor comprises a helical or spiral inductor formed on a semiconductor substrate having an input and an output. The helical inductor has a full length that provides a full inductance. Also, a full inductance switch is disposed between the output and the full length of the helical inductor. Finally, at least one microelectromechanical (MEMS) switch is disposed between the output and an intermediate location of the helical inductor.

Mems-Switched Stepped Variable Capacitor And Method Of Making Same
view source
US Patent:

6593672, Jul 15, 2003
Filed:

Dec 22, 2000
Appl. No.:

09/746718
Inventors:

Qing Ma - San Jose CA
Peng Cheng - Campbell CA
Valluri Rao - Saratoga CA
Assignee:

Intel Corporation - Santa Clara CA
International Classification:

H02M 306
US Classification:

307109, 307 85, 307 86, 307 99, 307106, 361233, 361277
Abstract:

The present invention relates to a stepped micro electromechanical structure (MEMS) capacitor that is actuated by a plurality of MEMS switches. The MEMS switches may be within the stepped capacitor circuit, or they may be actuated by an independent circuit. The stepped capacitor may also be varied with intermediate steps of capacitance by providing at least one variable capacitor in the stepped MEMS capacitor structure.

Wikipedia

Peng Chengmin

view source

Peng Cheng-min, (traditional Chinese: ; simplified Chinese: ; pinyin: Png Zhngmn; WadeGiles: Peng2 Cheng1 Min3; born August 6, ...

Peng Cheng

view source

Peng Cheng (Chinese: ; pinyin: Png Chng; April 23, 1997) is a Chinese pair skater. She currently competes with Zhang Hao. The pair made their...

ISBN #
10

Amazon

OPTO-INJECTION INTO SINGLE LIVING CELLS BY FEMTOSECOND NIR LASER: A NOVEL TECHNIQUE OF DELIVERING MATERIALS INTO LIVEING CELLS

view source

This dissertation presents a novel technique of delivering membrane impermeable molecules into single living cells with the assistance of femtosecond (fs) near-infrared (NIR) laser pulses. This technique promises several major advantages, namely, very high transfection efficiency, high cell sur...

Author
Cheng Peng

Binding
Paperback

Pages
88

Publisher
VDM Verlag Dr. Müller

ISBN #
3639098927

EAN Code
9783639098921

ISBN #
18

Is China's Indigenous Innovation Strategy Compatible with Globalization? (Policy Studies (East-West Center Washington))

view source

National innovation policies currently attract intense interest throughout the international community, particularly so in the aftermath of the global financial crisis. China is among those countries now relying heavily on government resources to drive innovation-a policy that directly challenges th...

Author
Xielin Liu, Peng Cheng

Binding
Paperback

Pages
70

Publisher
East-West Center

ISBN #
1932728961

EAN Code
9781932728965

ISBN #
17

Lanthanide Metal-Organic Frameworks (Structure and Bonding)

view source

The series Structure and Bonding publishes critical reviews on topics of research concerned with chemical structure and bonding. The scope of the series spans the entire Periodic Table and addresses structure and bonding issues associated with all of the elements. It also focuses attention on new an...

Binding
Hardcover

Pages
371

Publisher
Springer

ISBN #
3662457725

EAN Code
9783662457726

ISBN #
12

Peng Cheng:The Godfather of Thankgiving (Chinese Edition)

view source

This is a inspirational book about love and gratitude,whose hero is Peng Cheng,the brand founder of Thankgiving education.He was a rebellious bad boy in the eyes of adults,a below average student,a ragged rural boy picking up wastes and a self-abased person who cannot even say Mandarin standardly.Bu...

Author
Xiao Zhu

Binding
Paperback

Pages
199

Publisher
Hunan Peoples Publishing House

ISBN #
7543885018

EAN Code
9787543885011

ISBN #
2

IBT Oral - 2 - with MP3 (Chinese Edition)

view source

Author
Peng Tie Cheng, Chang Yuan, Xue Bai

Binding
Paperback

Pages
292

Publisher
China translation and publishing Corporation

ISBN #
7500126042

EAN Code
9787500126041

ISBN #
13

Modern Research and Application of Sijunzi Decoction (Chinese Edition)

view source

The book has cleared up, summed up and concluded the thinking ideas, the method and results of the research of Sijunzi decoction (the ancient prescription with main four herbal medicines, ginseng, largehead atractylodes rhizome, tuckahoe, licorice), conducted by our research team for many years. The...

Author
peng cheng

Binding
Hardcover

Pages
313

Publisher
People's Medical Publishing Press

ISBN #
7117152710

EAN Code
9787117152716

ISBN #
10

3ds Max 2012 Example Course (2nd Edition) (Chinese Edition)

view source

The book introduces the basic methods of operating 3ds Max 2012 and animation techniques, including overview of 3ds Max 2012, creation of the basic geometry, creation of two-dimensional graphics, editing and modifying devices, creation of composite objects, materials and chartlets, lighting and came...

Author
Zhou Peng Cheng Chen Fu

Binding
Paperback

Pages
290

Publisher
Posts and Telecom Press

ISBN #
7115276501

EAN Code
9787115276506

ISBN #
9

The 100 Methods Which Good Mother Who doesnt Spoil Uses to Educate Daughter (Chinese Edition)

view source

169 The 100 methods which good mother who dont spoil uses to educate daughter. The book summed up the 100 good methods from wisdom of educating daughter what the mother who never spoil must master, exploring the growth of the girls life, rational girl, sensibly cultivating the girls virtues, shaping...

Author
lu peng cheng

Binding
Paperback

Pages
225

Publisher
China Machine Press

ISBN #
7111365720

EAN Code
9787111365723

ISBN #
8

Myspace

Peng Cheng

view source

Locality:

United Kingdom

Gender:

Male

Birthday:

1944

News

Russia should get 4-year Olympic ban, WADA committee recommends

view source

Pairs 1. Sui Wenjing/Han Cong (CHN)2. Aleksandra Boikova/Dmitriy Kozlovskiy (RUS)3. Peng Cheng/Jin Yang (CHN)4. Anastasia Mishina/Aleksandr Galliamov (RUS)5. Kirsten Moore-Towers/Michael Marinaro (CAN)6. Daria Pavliuchenko/Denis Khodykin (RUS)
Date: Nov 25, 2019
Category: Sports
Source: Google

Facebook Fallout Deals Blow to Mercers' Political Clout

view source

Emerdata has a second Hong Kong-based director, Peng Cheng. Little public information about Ms. Peng, a British citizen, is available. But a woman with the same name is the chief executive of a publishing and online game company located in the same Hong Kong office tower as Frontier Services. In 201
Date: Apr 10, 2018
Category: World
Source: Google

Baseball league seeks to maintain fan enthusiasm after Manny Ramirez leaves

view source

Peng Cheng-min of the Brother Elephants, one of the highest-paid players in the CPBL, said no one would be able to replace Ramirez's popularity in Taiwan and that the league, baseball teams and players should work harder together, because "the CPBL cannot rely solely on Manny."
Date: Jun 19, 2013
Category: Sports
Source: Google