Peter Gustave Borden

US Patent:

6426644, Jul 30, 2002

Filed:

Aug 21, 2001

Appl. No.:

09/935128

Inventors:

Peter G. Borden - San Mateo CA
Regina G. Nijmeijer - Mountain View CA

Assignee:

Boxer Cross Inc. - Menlo Park CA

International Classification:

G01R 3126

US Classification:

324765, 324752, 324766, 356445

Abstract:

A method (1) creates charge carriers in a concentration that changes in a periodic manner (also called âmodulationâ) only with respect to time, and (2) determines the umber of charge carriers created in the carrier creation region by measuring an interference signal obtained by interference between a reference beam and a portion of a probe beam that is reflected by charge carriers at various depths of the semiconductor material, and comparing the measurement with corresponding values obtained by simulation (e. g. in graphs of such measurements for different junction depths). Various properties of the reflected portion of the probe beam (such as power and phase) are functions of the depth at which the reflection occurs, and can be measured to determine the depth of the junction, and the profile of active dopants. Therefore, the just-described reflected portion of the probe beam is interfered with a reference beam formed by a portion of probe beam reflected by the front surface of the semiconductor material, and phase and amplitude of the interference signal resulting therefrom are both measured. Alternatively, phase difference between a first interference signal (obtained by interference of (1) a variable phase beam and (2) the portion of probe beam reflected by the front surface) and a second interference signal (obtained by interference of (1) the variable phase beam and (2) a portion of the probe beam reflected by charge carriers at various depths) indicates the junction depth.

US Patent:

6483594, Nov 19, 2002

Filed:

Nov 26, 2001

Appl. No.:

09/994441

Inventors:

Peter G. Borden - San Mateo CA
Regina G. Nijmeijer - Mountain View CA

Assignee:

Boxer Cross, INC - Menlo Park CA

International Classification:

G01B 902

US Classification:

356502

Abstract:

A method (1) creates charge carriers in a concentration that changes in a periodic manner (also called âmodulationâ) only with respect to time, and (2) determines the number of charge carriers created in the carrier creation region by measuring an interference signal obtained by interference between a reference beam and a portion of a probe beam that is reflected by charge carriers at various depths of the semiconductor material, and comparing the measurement with corresponding values obtained by simulation (e. g. in graphs of such measurements for different junction depths). Various properties of the reflected portion of the probe beam (such as power and phase) are functions of the depth at which the reflection occurs, and can be measured to determine the depth of the junction, and the profile of active dopants. Therefore, the just-described reflected portion of the probe beam is interfered with a reference beam formed by a portion of probe beam reflected by the front surface of the semiconductor material, and phase and amplitude of the interference signal resulting therefrom are both measured. Alternatively, a phase difference between a first interference signal (obtained by interference of (1) a variable phase beam and (2) the portion of probe beam reflected by the front surface) and a second interference signal (obtained by interference of (1) the variable phase beam and (2) a portion of the probe beam reflected by charge carriers at various depths) indicates the junction depth.

US Patent:

6489801, Dec 3, 2002

Filed:

Apr 6, 2000

Appl. No.:

09/544280

Inventors:

Peter G. Borden - San Mateo CA 94402
Regina G. Nijmeijer - Mountain View CA 94043
Jiping Li - Mountain View CA 94043

International Classification:

G01R 3126

US Classification:

324766, 324752, 324765, 356432, 356445

Abstract:

An apparatus and method uses diffusive modulation (without generating a wave of carriers) for measuring a material property (such as any one or more of: mobility, doping, and lifetime) that is used in evaluating a semiconductor wafer. The measurements are carried out in a small area, for use on wafers having patterns for integrated circuit dice. The measurements are based on measurement of reflectance, for example as a function of carrier concentration. In one implementation, the semiconductor wafer is illuminated with two beams, one with photon energy above the bandgap energy of the semiconductor, and another with photon energy near or below the bandgap. The diameters of the two beams relative to one another are varied to extract additional information about the semiconductor material, for use in measuring, e. g. lifetime.

US Patent:

6812047, Nov 2, 2004

Filed:

Mar 8, 2000

Appl. No.:

09/521232

Inventors:

Peter G. Borden - San Mateo CA
Jiping Li - Fremont CA

Assignee:

Boxer Cross, Inc. - Santa Clara CA

International Classification:

H01L 2100

US Classification:

438 16, 356369

Abstract:

A structure having a number of traces passing through a region is evaluated by using a beam of electromagnetic radiation to illuminate the region, and generating an electrical signal that indicates an attribute of a portion (also called âreflected portionâ) of the beam reflected from the region. The just-described acts of âilluminatingâ and âgeneratingâ are repeated in another region, followed by a comparison of the generated signals to identify variation of a property between the two regions. Such measurements can identify variations in material properties (or dimensions) between different regions in a single semiconductor wafer of the type used in fabrication of integrated circuit dice, or even between multiple such wafers. In one embodiment, the traces are each substantially parallel to and adjacent to the other, and the beam has wavelength greater than or equal to a pitch between at least two of the traces. In one implementation the beam is polarized, and can be used in several ways, including, e. g.

US Patent:

6812717, Nov 2, 2004

Filed:

Mar 5, 2001

Appl. No.:

09/799481

Inventors:

Peter G. Borden - San Mateo CA
Regina G. Nijmeijer - Campbell CA
Beverly J. Klemme - Palo Alto CA

Assignee:

Boxer Cross, Inc - Santa Clara CA

International Classification:

G01R 3126

US Classification:

324752, 324766, 356432, 356447

Abstract:

A coefficient of a function that relates a measurement from a wafer to a parameter used in making the measurement (such as the power of a beam used in the measurement) is determined. The coefficient is used to evaluate the wafer (e. g. to accept or reject the wafer for further processing), and/or to control fabrication of another wafer. In one embodiment, the coefficient is used to control operation of a wafer processing unit (that may include, e. g. an ion implanter), or a heat treatment unit (such as a rapid thermal annealer).

US Patent:

6878559, Apr 12, 2005

Filed:

Sep 23, 2002

Appl. No.:

10/253121

Inventors:

Peter G. Borden - San Mateo CA, US
G. Jonathan Kluth - Los Gatos CA, US
Eric Paton - Morgan Hill CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA
Advanced Micro Devices, Inc. - Sunnyvale CA

International Classification:

H01L021/66

US Classification:

438 14, 438 15, 438 16, 324765, 356432

Abstract:

Any semiconductor wafer fabrication process may be changed to monitor lateral abruptness of doped layers as an additional step in the wafer fabrication process. In one embodiment, a test structure including one or more doped regions is formed in a production wafer (e. g. simultaneously with one or more transistors) and one or more dimension(s) of the test structure are measured, and used as an estimate of lateral abruptness in other doped regions in the wafer, e. g. in the simultaneously formed transistors. Doped regions in test structures can be located at regularly spaced intervals relative to one another, or alternatively may be located with varying spacings between adjacent doped regions. Alternatively or in addition, multiple test structures may be formed in a single wafer, with doped regions at regular spatial intervals in each test structure, while different test structures have different spatial intervals.

US Patent:

6885444, Apr 26, 2005

Filed:

Mar 1, 2002

Appl. No.:

10/090262

Inventors:

Peter G. Borden - San Mateo CA, US

Assignee:

Boxer Cross Inc - Santa Clara CA

International Classification:

G01N021/88

US Classification:

3562398, 356369, 3562374, 3562375

Abstract:

A method and apparatus measure properties of two layers of a damascene structure (e. g. a silicon wafer during fabrication), and use the two measurements to identify a location as having voids. The two measurements may be used in any manner, e. g. compared to one another, and voids are deemed to be present when the two measurements diverge from each other. In response to the detection of voids, a process parameter used in fabrication of the damascene structure may be changed, to reduce or eliminate voids in to-be-formed structures.

US Patent:

6885458, Apr 26, 2005

Filed:

Aug 19, 2002

Appl. No.:

10/223952

Inventors:

Peter G. Borden - San Mateo CA, US
Regina G. Nijmeijer - Mountain View CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01B011/02

US Classification:

356502, 356445

Abstract:

A method (1) creates charge carriers in a concentration that changes in a periodic manner (also called “modulation”) only with respect to time, and (2) determines the number of charge carriers created in the carrier creation region by measuring an interference signal obtained by interference between a reference beam and a portion of a probe beam that is reflected by charge carriers at various depths of the semiconductor material, and comparing the measurement with corresponding values obtained by simulation (e. g. in graphs of such measurements for different junction depths). Various properties of the reflected portion of the probe beam (such as power and phase) are functions of the depth at which the reflection occurs, and can be measured to determine the depth of the junction, and the profile of active dopants. Therefore, the just-described reflected portion of the probe beam is interfered with a reference beam formed by a portion of probe beam reflected by the front surface of the semiconductor material, and phase and amplitude of the interference signal resulting therefrom are both measured. Alternatively, a phase difference between a first interference signal (obtained by interference of (1) a variable phase beam and (2) the portion of probe beam reflected by the front surface) and a second interference signal (obtained by interference of (1) the variable phase beam and (2) a portion of the probe beam reflected by charge carriers at various depths) indicates the junction depth.