Peter D George

US Patent:

61655678, Dec 26, 2000

Filed:

Apr 12, 1999

Appl. No.:

9/290385

Inventors:

Peter Lowell George Ventzek - Austin TX
Daniel G. Coronell - Austin TX
Michael J. Hartig - Austin TX
John C. Arnold - Austin TX

Assignee:

Motorola, Inc. - Schumburg IL

International Classification:

C23C 1434
C23C 1448

US Classification:

427576

Abstract:

A film is formed over a substrate using a physical vapor deposition method. When using ionized metal plasma physical vapor deposition, the deposition chamber configuration or operating parameters are adjusted to achieve the desired film characteristics. If the film is to be substantially uniform in thickness across a substrate, the deposition species density is made higher at locations away from the center of the substrate.

US Patent:

63149281, Nov 13, 2001

Filed:

Dec 6, 2000

Appl. No.:

9/731371

Inventors:

Daniel James Baraszu - Plymouth MI
George Aristidis Papaioannou - Livonia MI
Peter Renny George - West Chester OH
Satheesh Makkapati - Belleville MI
Steve Poe - Canton MI

Assignee:

Ford Global Technologies, Inc. - Dearborn MI

International Classification:

F01L 118
F01L 1300
F02D 1306

US Classification:

123 9016

Abstract:

The lost motion arm 44 has first and second contact surfaces 102 and 104. A latch mechanism is connected on the body with an extendable plunger 120 having a first contact surface 124 and a second contact surface 126. The plunger 120 has a first position for first contact surface 124 engagement with the lost motion arm first contact surface 102 to prevent angular movement of the lost motion arm 44 with respect to the body 10 in a first angular direction. When angular movement in the first angular direction is prevented, the motion of the lost motion arm 44 imparted by the cam lobe 66 is transmitted to the body 10 to provide for a first state of operation of the valve stem 18. When the plunger 120 is in a second position, non-contacting with the lost motion arm 44, the lost motion arm 44 is allowed to pivot relative to the body 10. Accordingly, the rocker arm assembly 7 will be in a second state of total or partial deactivation of the valve stem 18. The plunger second contact surface 126 contacts with the lost motion arm second contact surface 104 to cause the plunger 120 to be cammed out of the first position when the plunger 120 is in the first position and when the plunger first contact surface 124 is not engaged with the lost motion arm's first contact surface 102.

US Patent:

20220392773, Dec 8, 2022

Filed:

Jun 4, 2021

Appl. No.:

17/339436

Inventors:

- Minato-ku, JP
Peter Lowell George Ventzek - Austin TX, US
Alok Ranjan - Austin TX, US

International Classification:

H01L 21/3213

Abstract:

In certain embodiments, a method of processing a semiconductor structure includes forming a patterned layer over a copper layer to be etched. The copper layer is disposed over a substrate. The method includes patterning the copper layer, using the patterned layer as an etch mask, by performing a cyclic etch process to form a recess in the copper layer. The cyclic etch process includes forming, in a first etch step, a passivation layer on an exposed surface of the copper layer by exposing the exposed surface of the copper layer to a chlorine gas. The passivation layer replaces at least a portion of a surface layer of the copper layer. The cyclic etch process includes subsequently etching, in a second etch step, the passivation layer using a first plasma that includes a noble gas. Each cycle of the cyclic etch process extends the recess in the copper layer.

US Patent:

20220380896, Dec 1, 2022

Filed:

May 27, 2021

Appl. No.:

17/332581

Inventors:

- Tokyo, JP
John Carroll - Austin TX, US
Peter Lowell George Ventzek - Austin TX, US

International Classification:

C23C 16/455
H01J 37/32

Abstract:

An exemplary apparatus includes a chamber that includes a first window and a second window; a substrate holder configured to hold a substrate in the processing chamber; an infrared light (IR) source configured to generate a collimated IR beam; a first optical assembly configured to transmit the collimated IR beam into the chamber through the first window and direct the collimated IR beam at an incident angle of Brewster's angle with a front side of the substrate; and a second optical assembly configured to receive the collimated IR beam reflected at a back side of the substrate through the second window and direct the collimated IR beam to an optical sensor system.

US Patent:

20210404055, Dec 30, 2021

Filed:

May 21, 2021

Appl. No.:

17/327437

Inventors:

- Tokyo, JP
Peter Lowell George Ventzek - Austin TX, US
Toshihiko Iwao - Austin TX, US

International Classification:

C23C 16/26
C23C 16/505
C23C 16/52
C23C 16/46

Abstract:

A method of forming a carbon hard mask includes generating a radio frequency plasma including carbon-based ions by supplying continuous wave radio frequency power to a plasma processing chamber. The carbon-based ions have a first average ion energy. The method further includes adjusting the first average ion energy of the carbon-based ions to a second average ion energy by supplying continuous wave direct current power to the plasma processing chamber concurrently with the continuous wave radio frequency power and forming a carbon hard mask at a substrate within the plasma processing chamber by delivering the carbon-based ions having the second average ion energy to the substrate.