Peter A George

US Patent:

41006089, Jul 11, 1978

Filed:

Feb 28, 1977

Appl. No.:

5/773101

Inventors:

Peter K. George - San Jose CA

Assignee:

Rockwell International Corporation - El Segundo CA

International Classification:

G11C 1908

US Classification:

365 2

Abstract:

There is provided a memory system, for example, a magnetic bubble domain memory, which includes an exchange stack buffer memory between a main storage area and other portions of a bubble domain chip organization. The buffer memory includes a plurality of magnetic areas, such as discs, arranged in an ordered array between the main storage area and the remainder of the chip organization. Control conductors are arranged to interconnect each row of magnetic areas with an adjacent row of similar areas, or with portions of the main storage area, or with the remainder of the chip organization circuit. Means are provided to supply signals to the control conductors to selectively transfer information from a row of magnetic areas to one of the adjacent areas.

US Patent:

43588301, Nov 9, 1982

Filed:

Aug 25, 1980

Appl. No.:

6/180834

Inventors:

Peter K. George - Morgan Hill CA

Assignee:

National Semiconductor Corporation - Santa Clara CA

International Classification:

G11C 1908

US Classification:

365 39

Abstract:

A field-access bubble memory chip has a plurality of permalloy elements overlying an insulating layer. The permalloy elements are configured and positioned to define a plurality of paths for propagating magnetic bubbles under the influence of a Z bias magnetic field and a rotating XY magnetic drive field. A first portion of the paths are located in control function areas of the chip and a second portion of the paths are located in a storage area of the chip. The period of the permalloy elements in the control function areas is substantially greater then the period of the permalloy elements in the storage area. The thickness of the insulating layer immediately beneath the permalloy elements is less in the storage area than in the control function areas. This difference in thickness is sufficient so that the propagation margins for magnetic bubbles in the control function areas and in the storage area are substantially equal. Thus the bit density in the storage area can be significantly increased by reducing the period of the elements therein without any net reduction in the overall margin of the chip.

US Patent:

43464548, Aug 24, 1982

Filed:

Aug 22, 1980

Appl. No.:

6/180312

Inventors:

Peter K. George - Morgan Hill CA

Assignee:

National Semiconductor Corporation - Santa Clara CA

International Classification:

G11C 1908

US Classification:

365 15

Abstract:

A bubble memory chip includes a plurality of data loops, some of which may be defective, for storing magnetic bubbles representative of data therein. A serial-parallel input propagation path and a parallel-serial output propagation path are provided for propagating bubbles to and from the data loops. A plurality of spaced apart permalloy disk elements are provided, each adapted for having a single bubble circulated thereabout in the presence of an in-plane rotating magnetic drive field. A stream of bubbles representative of an error map indicating which of the data loops are defective is loaded onto and read from the disk elements to initialize the memory. A plurality of gates permit the bubbles of the error map to be transferred between an error map propagation path and the disk elements in parallel fashion upon pulsing of an adjacent control conductor. The potential for data scrambling in the error map is eliminated. Power consumption and access time are reduced in connection with reading and propagating the error map through the detector to initialize the memory.

US Patent:

42649854, Apr 28, 1981

Filed:

Jun 6, 1979

Appl. No.:

6/046146

Inventors:

Peter K. George - Morgan Hill CA
Tsutomu Kobayashi - Placentia CA

Assignee:

Rockwell International Corporation - El Segundo CA

International Classification:

G11C 1908

US Classification:

365 41

Abstract:

The invention is directed to continuous (gapless) propagation structures for use with magnetic bubble domain devices. The gapless structures are arranged so that magnetic bubbles will propagate therealong without a significant change in size or diameter of the bubble. In addition, the structures are configured so that the bubbles will propagate in a preferred direction without ambiguity.

US Patent:

43331637, Jun 1, 1982

Filed:

Apr 25, 1980

Appl. No.:

6/143593

Inventors:

Peter K. George - Morgan Hill CA

Assignee:

National Semiconductor Corporation - Santa Clara CA

International Classification:

G11C 1908

US Classification:

365 43

Abstract:

In a bubble memory, propagation elements are configured so that shorts between adjacent elements as a result of fabrication inaccuracies do not destroy their poles and create barriers to bubble propagation. In designing the bubble memory, the gaps can thus approach the resolution limit of the photolithography, resulting in a higher storage density and a reduced operating drive field. In one embodiment permalloy chevrons which overlie a garnet film have opposing side edges defining a gap therebetween which increases in width moving in a direction away from the poles.

US Patent:

48977497, Jan 30, 1990

Filed:

Mar 16, 1988

Appl. No.:

7/168820

Inventors:

Craig M. Perlov - Los Altos CA
Peter K. George - Bloomington MN
Mark Jursich - Prior Lake MN

Assignee:

Magnetic Peripherals Inc. - Minnetonka MN

International Classification:

G11B 5127
G11B 5187

US Classification:

360126

Abstract:

A vertically recording write probe and read ring head. A ring pole is mounted adjacent a vertical recording probe pole. The ring pole tip is made thin such that it saturates on write and does not affect performance of the probe pole. The ring pole tip is separated from the probe tip by a small read gap. The probe pole and ring pole are connected in a back gap region so that the combination reads like a conventional read head.

US Patent:

43085911, Dec 29, 1981

Filed:

Sep 29, 1980

Appl. No.:

6/192064

Inventors:

Peter K. George - Morgan Hill CA
Saleem Akhtar - Groton MA

Assignee:

National Semiconductor Corporation - Santa Clara CA

International Classification:

G11C 1908

US Classification:

365 2

Abstract:

In a field-access magnetic bubble memory X and Y coils encircle the chip for providing the rotating XY magnetic drive field when conventional drive signals are applied thereto. At least one of the coils is non-uniformly wound to provide a first predetermined magnitude of the drive field in first predetermined chip areas and a second lesser predetermined magnitude of the drive field in a second chip area. In the embodiment disclosed the chip has a dual-block replicate architecture with gates and bubble detectors requiring a relatively high drive field located in peripheral edge areas at the bottom and top of the chip. A plurality of data storage loops requiring a relatively low drive field are located in the medial portion of the chip. The outer layer of the Y coil is non-uniformly wound to provide a gap in registration with the medial area of the chip. As a result, the magnitude of the drive field is higher in the peripheral edge areas than in the medial storage area, making possible a reduction in coil power consumption.

US Patent:

41387368, Feb 6, 1979

Filed:

Jul 28, 1977

Appl. No.:

5/820079

Inventors:

Peter K. George - Morgan Hill CA
Tsutomu Kobayashi - Placentia CA

Assignee:

Rockwell International Corporation - El Segundo CA

International Classification:

G11C 1908

US Classification:

365 12

Abstract:

There is provided a switch which is useful in magnetic bubble domain devices. The switch can be used to replicate, transfer or annihilate any bubble domains in a magnetic bubble domain system. The switch comprises a "BOOMERANG" shaped element which is disposed adjacent to two juxtaposed magnetic bubble domain propagation paths. A re-entrant current path conductor is integrally connected to the boomerang shaped element and associated with at least one of the propagation paths whereby magnetic bubble domains can be stretched, cut, annihilated or the like in response to a control current signal. Optional bar shaped elements are associated with various components of the switch in order to improve the operating characteristics of the switch.