Peter Y Huang

US Patent:

8626863, Jan 7, 2014

Filed:

Oct 28, 2008

Appl. No.:

12/259902

Inventors:

Peter Chi-Hao Huang - Menlo Park CA, US
Erin Turner - San Francisco CA, US

Assignee:

Trion Worlds, Inc. - Redwood City CA

International Classification:

G06F 15/16

US Classification:

709207, 709206

Abstract:

Persistent synthetic environment message notification is described, including retrieving synthetic environmental data associated with an event occurring within a synthetic environment, identifying one or more formats to configure the synthetic environmental data and to transmit the synthetic environmental data, generating a message comprising the synthetic environmental data, the message being generated based on at least one of the one or more formats, and sending the message comprising the synthetic environmental data to an endpoint.

US Patent:

20200019201, Jan 16, 2020

Filed:

Sep 22, 2019

Appl. No.:

16/578361

Inventors:

- Hsin-Chu, TW
Da-Wen Lin - Hsinchu City, TW
Peter Huang - Pleasanton CA, US
Paul Rousseau - Sunnyvale CA, US
Sheng-Jier Yang - Zhubei City, TW

International Classification:

G05F 3/16
H01L 29/06
H01L 27/088
H01L 21/8234
G05F 1/595
G05F 1/46
H01L 29/78

Abstract:

Some embodiments relate to a device disposed on a semiconductor substrate. The semiconductor substrate includes a base region and a crown structure extending upwardly from the base region. The crown structure is narrower than the base region. A plurality of fins extend upwardly from an upper surface of the crown structure. A gate dielectric material is disposed over upper surfaces and sidewalls of the plurality of the fins. A conductive electrode is disposed along sidewall portions of the gate dielectric material. An uppermost surface of the conductive electrode resides below the upper surfaces of the plurality of fins.

US Patent:

20180356852, Dec 13, 2018

Filed:

Aug 21, 2018

Appl. No.:

16/106476

Inventors:

- Hsin-Chu, TW
Da-Wen Lin - Hsinchu City, TW
Peter Huang - Pleasanton CA, US
Paul Rousseau - Sunnyvale CA, US
Sheng-Jier Yang - Zhubei City, TW

International Classification:

G05F 3/16
H01L 29/78
H01L 29/06
G05F 1/595
G05F 1/46
H01L 21/8234
H01L 27/088

Abstract:

Some embodiments relate to a method. A semiconductor substrate is provided and has a base region and a crown structure extending upwardly from the base region. A plurality of fins are formed to extend upwardly from an upper surface of the crown structure. A gate dielectric material is formed over upper surfaces and sidewalls of the plurality of the fins. A conductive electrode material is formed over upper surfaces and sidewalls of the gate dielectric material. An etch is performed to etch back the conductive electrode material so upper surfaces of etched back conductive electrodes reside below the upper surfaces of the plurality of fins.

US Patent:

20180248689, Aug 30, 2018

Filed:

Sep 4, 2015

Appl. No.:

15/757450

Inventors:

Wen-Da HU - Shanghai, CN
Shu-Jia HUA - Shanghai, CN
Peter An-Ping HUANG - Palo Alto CA, US
- Houston TX, US

International Classification:

H04L 9/08
H04L 9/32
G06F 21/46

Abstract:

In some examples, a method includes receiving a user input string and generating an application password for a particular application from the user input string. Generating the application password may include generating a key for the particular application and specifying a derivation parameter of the application password by applying an indiscriminate selection process to select a character set from multiple character sets for generating the application password. Generating the application password may also include mapping a portion of a hash value of the key and the user input string to characters of the character set selected through the indiscriminate selection process to obtain the application password.