Peter W Levine

US Patent:

20120104464, May 3, 2012

Filed:

Oct 27, 2011

Appl. No.:

13/283195

Inventors:

James Robert Janesick - Huntington Beach CA, US
Peter Alan Levine - West Windsor NJ, US
John Robertson Tower - Yardley PA, US

International Classification:

H01L 27/146

US Classification:

257223, 257E27139

Abstract:

A CMOS image sensor is disclosed. The CMOS image sensor includes a semiconductor substrate having a surface. An epitaxial layer is grown on the surface. A p-type CMOS pixel formed substantially in the epitaxial layer. In one version of the CMOS image sensor, there exists a net n-type dopant concentration profile in the semiconductor substrate and the epitaxial layer which has a maximum value at a predetermined distance from the surface and which decreases monotonically on both sides of the profile from the maximum value within the semiconductor substrate and the epitaxial layer. In another version of the CMOS image sensor, there exists a net n-type dopant concentration profile in the semiconductor substrate and the epitaxial layer which has a maximum value at the surface and which decreases monotonically with increasing distance from the surface within the semiconductor substrate and the epitaxial layer.