Peter A Locke

US Patent:

6413854, Jul 2, 2002

Filed:

Aug 24, 1999

Appl. No.:

09/382110

Inventors:

Cyprian E. Uzoh - Milpitas CA
Daniel C. Edelstein - New Rochelle NY
Cheryl Faltermeier - LaGrange NY
Peter S. Locke - Hopewell Junction NY

Assignee:

International Business Machines Corp. - Armonk NY

International Classification:

H01L 214763

US Classification:

438637, 438619, 438622, 438629

Abstract:

A method for forming a structure. A first dielectric material is deposited on a substrate. The first dielectric material is patterned. At least one metal is deposited in and on the first dielectric material. Portions of the at least one metal are removed at least in a region above an upper surface of the first dielectric material. The first dielectric material is removed. A second dielectric material is provided in place of first dielectric material.

US Patent:

6600230, Jul 29, 2003

Filed:

Jul 9, 2001

Appl. No.:

09/899923

Inventors:

Cyprian E. Uzoh - Milpitas CA
Peter S. Locke - Hopewell Junction NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2348

US Classification:

257762, 257758, 257774, 438677, 428209, 428 76

Abstract:

A process for plating metal in submicron structures. A seedlayer is deposited on surfaces of submicron structures. The seedlayer is annealed at a temperature of about 80Â C. to about 130Â C. Metal is plated on the seedlayer.

US Patent:

6258717, Jul 10, 2001

Filed:

Jul 30, 1999

Appl. No.:

9/363741

Inventors:

Cyprian E. Uzoh - Milpitas CA
Peter S. Locke - Hopewell Junction NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 2144

US Classification:

438677

Abstract:

A process for plating metal in submicron structures. A seedlayer is deposited on surfaces of submicron structures. The seedlayer is annealed at a temperature of about 80. degree. C. to about 130. degree. C. Metal is plated on the seedlayer.