Phillip Michael Thompson

US Patent:

7297990, Nov 20, 2007

Filed:

Jul 30, 2004

Appl. No.:

10/903442

Inventors:

Paul R. Berger - Columbus OH, US
Phillip E. Thompson - Springfield VA, US
Niu Jin - Columbus OH, US

Assignee:

The Ohio State University - Columbus OH

International Classification:

H01L 29/00

US Classification:

257106, 257104

Abstract:

A silicon-based interband tunneling diode () includes a degenerate p-type doping () of acceptors, a degenerate n-type doping () of donors disposed on a first side of the degenerate p-type doping (), and a barrier silicon-germanium layer () disposed on a second side of the degenerate p-type doping () opposite the first side. The barrier silicon-germanium layer () suppresses diffusion of acceptors away from a p/n junction defined by the degenerate p-type and n-type dopings ().

US Patent:

7361943, Apr 22, 2008

Filed:

Apr 19, 2006

Appl. No.:

11/407120

Inventors:

Paul R. Berger - Columbus OH, US
Niu Jin - Champaign IL, US
Phillip E. Thompson - Springfield VA, US
Sung-Yong Chung - Columbus OH, US

Assignee:

The Ohio State University - Columbus OH
The United States of America, as represented by the Secretary of the Navy - Washington DC

International Classification:

H01L 29/88

US Classification:

257106, 257 25, 257104, 257199, 257656, 257E2934

Abstract:

A Si-based diode () is formed by epitaxially depositing a Si-based diode structure on a silicon substrate. The Si-based diode structure includes a Si-based pn junction () having a backward diode current-voltage characteristic in which the forward tunneling current is substantially smaller than the backward tunneling current at comparable voltage levels. In some embodiments, the Si-based pn junction includes at least one non-silicon or silicon alloy layer such as at least one SiGe layer (). In some embodiments, at least one delta doping () is disposed on the silicon substrate in or near the pn junction, that together with the Si-based pn junction define an electrical junction having the backward diode current-voltage characteristic. A large area detector array may include a plurality of such Si-based diodes ().