Qi C Wang

US Patent:

58174753, Oct 6, 1998

Filed:

Nov 15, 1996

Appl. No.:

8/746734

Inventors:

David L. Gibbs - New York NY
Wei-Fang Hsia - Bayside NY
Qi Wang - New York NY

Assignee:

Giles Scientific, Inc. - New York NY

International Classification:

C12Q 102

US Classification:

435 29

Abstract:

A microbiological assay investigatory apparatus has a source of electromagnetic waveform energy, a support and a linear color sensor. The support serves to hold a microbiological assay tray in a predetermined location relative to the source and to the sensor. The assay tray has different reaction chemicals and microorganisms of the same type in respective wells or chambers. The linear color sensor is disposed in a predetermined position relative to the support and concomitantly the assay tray for receiving electromagnetic waveform radiation emanating from a linear array of the wells in response to waveform energy from the source. The linear color sensor generates a signal encoding colorimetric data pertaining to a series of samples lying along a line intersecting the linear array of the wells.

US Patent:

20200308165, Oct 1, 2020

Filed:

Sep 12, 2018

Appl. No.:

16/645379

Inventors:

- New York NY, US
Venkat MYSORE - South Orange NJ, US
Fabrizio GIORDANETTO - New York NY, US
Qi WANG - Waldwick NJ, US

International Classification:

C07D 417/14
C07D 401/14
C07D 401/04
C07D 403/04
C07D 413/14
C07D 403/14

Abstract:

A compound of Formula (Ia) or (Ib), or a pharmaceutically acceptable salt thereof is described, wherein the substituents are as defined herein. Pharmaceutical compositions comprising the same and method of using the same are also described.

US Patent:

20160372651, Dec 22, 2016

Filed:

Sep 6, 2016

Appl. No.:

15/256764

Inventors:

- Arlington VA, US
Thomas H. Metcalf - Washington DC, US
Daniel R. Queen - Silver Spring MD, US
Battogtokh Jugdersuren - Arlington VA, US
Qi Wang - Littleton CO, US
William Nemeth - Wheat Ridge CO, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 35/34
H01L 35/22

Abstract:

A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H:SiHratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.

US Patent:

20160331339, Nov 17, 2016

Filed:

May 13, 2016

Appl. No.:

15/153985

Inventors:

- New York NY, US
Qi Wang - New York NY, US
Yue Yu - New York NY, US
Xingjian Zhang - New York NY, US
Yizhong Hu - New York NY, US

International Classification:

A61B 6/00
A61B 6/03

Abstract:

The present disclosure provides systems and methods useful in early detection and assessment of osteoarthritis and other bone-related conditions.

US Patent:

20160247997, Aug 25, 2016

Filed:

Feb 19, 2016

Appl. No.:

15/047671

Inventors:

- Arlington VA, US
Thomas H. Metcalf - Washington DC, US
Daniel R. Queen - Silver Spring MD, US
Battogtokh Jugdersuren - Arlington VA, US
Qi Wang - Littleton CO, US
William Nemeth - Wheat Ridge CO, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 35/34
H01L 35/22

Abstract:

A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD) with a controlled H:SiHratio R=6-10 or by plasma-enhanced (PECVD) with a controlled R=80-100, followed by ion implantation of an n- or p-type dopant and a final annealing step to activate the implanted dopants and to remove amorphous regions. A doped nc-Si thin film thermoelectric material so formed has both a controllable grain size of from a few tens of nm to 3 nm and a controllable dopant distribution and thus can be configured to provide a thermoelectric material having predetermined desired thermal and/or electrical properties. A final annealing step is used to activate the dopants and remove any residual amorphous regions.