Qin Wang

US Patent:

20060133964, Jun 22, 2006

Filed:

Oct 18, 2005

Appl. No.:

11/254030

Inventors:

Thomas Bailey - San Jose CA, US
Michael Ahern - Mountain View CA, US
Michael West - San Jose CA, US
Qin Wang - San Jose CA, US
Zhenbiao Wang - Fremont CA, US
James Tappan - Sunnyvale CA, US

International Classification:

G01N 33/00

US Classification:

422099000, 422068100

Abstract:

An automated matrix removal module is configurable to automatically withdraw a portion of sample containing an interfering matrix. The module is further configurable to mix the portion of sample with a reagent selected to react with the matrix to form a precipitant and then filter the mixture of sample and precipitant reagent through a filter. Finally, the module is further configurable to flush the precipitant from the filter.

US Patent:

20130029427, Jan 31, 2013

Filed:

Apr 14, 2011

Appl. No.:

13/640312

Inventors:

Harmesh K. Saini - Santa Clara CA, US
Michael J. West - San Jose CA, US
Qin Wang - San Jose CA, US
James Garvey - San Jose CA, US
Paul Rand - San Jose CA, US
Marc Angelo - San Jose CA, US
David Johnston - San Jose CA, US
Robert Ormond - San Jose CA, US
Ye Han - San Jose CA, US

International Classification:

G01N 21/75

US Classification:

436125, 422 8205

Abstract:

A real-time, on-line method and analytical system for determining halohydrocarbons in water which operate by (1) extracting on-line samples; (2) purging volatile halohydrocarbons from the water (e.g., with air or nitrogen); (3) carrying the purge gas containing the analytes of interest over a porous surface where the analytes are adsorbed; (4) recovering the analytes from the porous surface with heat (thermal desorption) or solvent (solvent elution) to drive the analytes into an organic chemical mixture; (5) generating an optical change (e.g., color change) in dependence upon a reaction involving the analytes and a pyridine derivative; and (6) measuring optical characteristics associated with the reaction to quantify the volatile halogenated hydrocarbon concentration.

US Patent:

20220278148, Sep 1, 2022

Filed:

Feb 26, 2021

Appl. No.:

17/187396

Inventors:

- Santa Clara CA, US
Qin Wang - San Jose CA, US

International Classification:

H01L 27/146

Abstract:

A pixel circuit includes a trench etched into a front side surface of a semiconductor substrate. The trench includes a bottom surface etched along a crystalline plane and a tilted side surface etched along a crystalline plane that extends between the bottom surface and the front side surface. A floating diffusion is disposed in the semiconductor substrate beneath the bottom surface of the trench. A photodiode is disposed in the semiconductor substrate beneath the tilted side surface of the trench and is separated from the floating diffusion. The photodiode is configured to photogenerate image charge in response to incident light. A tilted transfer gate is disposed over at least a portion of the bottom surface and at least a portion of the tilted side surface of the trench. The tilted transfer gate is configured to transfer the image charge from the photodiode to the floating diffusion.

US Patent:

20230035130, Feb 2, 2023

Filed:

Aug 2, 2021

Appl. No.:

17/392023

Inventors:

- Santa Clara CA, US
Qin WANG - San Jose CA, US
Chao NIU - Santa Clara CA, US

International Classification:

G02B 3/00
H04N 5/357
H04N 5/369

Abstract:

Embodiments disclosed herein reduce petal flare. A flare-suppressing image sensor includes a plurality of pixels including a first set of pixels and a second set of pixels. The flare-suppressing image sensor further includes plurality of microlenses, where each microlens is aligned to a respective one of the first set of pixels. The flare-suppressing image sensor further includes plurality of sub-microlens, where each microlens array is aligned to a respective one of the second set of pixels.

US Patent:

20210151487, May 20, 2021

Filed:

Nov 20, 2019

Appl. No.:

16/689938

Inventors:

- Santa Clara CA, US
Qin WANG - San Jose CA, US
Gang CHEN - San Jose CA, US

International Classification:

H01L 27/146
H01L 29/423
H01L 29/66
H01L 29/78

Abstract:

A pixel includes a semiconductor substrate, a photodiode region, a floating diffusion region, and a dielectric layer. The substrate has a top surface forming a trench lined by the dielectric layer, and having a trench depth relative to a planar region of the top surface. The photodiode region is in the substrate and includes a bottom photodiode section beneath the trench and a top photodiode section adjacent to the trench, adjoining the bottom photodiode section, and extending toward the planar region to a photodiode depth less than the trench depth. The floating diffusion region is adjacent to the trench and has a junction depth less than the trench depth. A top region of the dielectric layer is between the planar region and the junction depth. A bottom region of the dielectric layer is between the photodiode depth and the trench depth, and thicker than the top region.

US Patent:

20210082975, Mar 18, 2021

Filed:

Sep 18, 2019

Appl. No.:

16/575269

Inventors:

- Santa Clara CA, US
Qin Wang - San Jose CA, US

International Classification:

H01L 27/146

Abstract:

Backside illuminated sensor pixel structure. In one embodiment, an image sensor includes a plurality of photodiodes arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive incoming light through a backside of the semiconductor substrate. The individual photodiodes have a diffusion region formed in an epitaxial region and a plurality of storage nodes (SGs) that are disposed on the front side of the semiconductor substrate and formed in the epitaxial region. An opaque isolation layer having a plurality of opaque isolation elements is disposed proximate to the front side of the semiconductor substrate and proximate to the diffusion region of the plurality of photodiodes. The opaque isolation elements are configured to block a path of incoming light from the backside of the semiconductor substrate toward the storage nodes.

US Patent:

20210051250, Feb 18, 2021

Filed:

Aug 13, 2019

Appl. No.:

16/539931

Inventors:

- Santa Clara CA, US
Yuanwei Zheng - San Jose CA, US
Qin Wang - San Jose CA, US
Cunyu Yang - Los Gatos CA, US
Guannan Chen - San Carlos CA, US
Duli Mao - Sunnyvale CA, US
Dyson H. Tai - San Jose CA, US
Lindsay Alexander Grant - Campbell CA, US

Assignee:

OMNIVISION TECHNOLOGIES, INC. - Santa Clara CA

International Classification:

H04N 5/225
G02B 5/20
G02B 7/00

Abstract:

An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.

US Patent:

20200105807, Apr 2, 2020

Filed:

Oct 2, 2018

Appl. No.:

16/149544

Inventors:

- Santa Clara CA, US
Yuanwei Zheng - San Jose CA, US
Qin Wang - San Jose CA, US
Cunyu Yang - Milpitas CA, US
Guannan Chen - San Carlos CA, US
Duli Mao - Sunnyvale CA, US
Dyson Tai - San Jose CA, US
Lindsay Grant - Campbell CA, US
Eric Webster - Mountain View CA, US
Sing-Chung Hu - San Jose CA, US

International Classification:

H01L 27/146
H04N 5/378

Abstract:

An image sensor includes one or more photodiodes disposed in a semiconductor material to receive image light and generate image charge, and a floating diffusion to receive the image charge from the one or more photodiodes. One or more transfer transistors is coupled to transfer image charge in the one or more photodiodes to the floating diffusion, and a source follower transistor is coupled to amplify the image charge in the floating diffusion. The source follower includes a gate electrode (coupled to the floating diffusion), source and drain electrodes, and an active region disposed in the semiconductor material between the source and drain electrodes. A dielectric material is disposed between the gate electrode and the active region and has a first thickness and a second thickness. The second thickness is greater than the first thickness, and the second thickness is disposed closer to the drain electrode than the first thickness.